IXTK20N150
Abstract: No abstract text available
Text: Advance Technical Information IXTK20N150 IXTX20N150 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS
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IXTK20N150
IXTX20N150
O-264
O-264)
O-264
PLUS247
PLUS247)
100ms
100ms
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTK8N150L IXTX8N150L = 1500V = 8A Ω < 3.6Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA TO-264(IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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IXTK8N150L
IXTX8N150L
O-264
PLUS247
8N15L
100ms
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PDF
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PLUS247
Abstract: 013009 IXTK8N150L
Text: Preliminary Technical Information IXTK8N150L IXTX8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 = 1500V = 8A Ω < 3.6Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA TO-264(IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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IXTK8N150L
IXTX8N150L
O-264
PLUS247
8N15L
100ms
013009
IXTK8N150L
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PDF
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Untitled
Abstract: No abstract text available
Text: IXTK20N150 IXTX20N150 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V
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Original
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IXTK20N150
IXTX20N150
O-264
100ms
20N150
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PDF
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Untitled
Abstract: No abstract text available
Text: IXTJ4N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 2.5A 6Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500
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Original
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IXTJ4N150
O-247TM
E153432
100ms
4N150
09-12-12-C
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PDF
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IXTH2N150L
Abstract: IXTH2N150
Text: Advance Technical Information LinearTM Power MOSFET w/Extended FBSOA IXTH2N150L VDSS ID25 = 1500V = 2A 15 RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C
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IXTH2N150L
O-247
100ms
2N150L
IXTH2N150L
IXTH2N150
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PDF
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IXTJ6N150
Abstract: No abstract text available
Text: IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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IXTJ6N150
O-247TM
E153432
100ms
6N150
IXTJ6N150
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTK8N150L IXTX8N150L VDSS ID25 = 1500V = 8A Ω = 5.0Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-264(IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1500
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Original
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IXTK8N150L
IXTX8N150L
O-264
PLUS247
338B2
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PDF
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20N150
Abstract: IXTK20N150 432 - 070
Text: IXTK20N150 IXTX20N150 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR
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Original
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IXTK20N150
IXTX20N150
O-264
O-264)
O-264
PLUS247
PLUS247)
100ms
100ms
20N150
432 - 070
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTT12N150
IXTH12N150
O-268
O-247
12N150
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR
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IXTT6N150
IXTH6N150
O-268
O-247
6N150
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SOT-227B Outline
Abstract: Vdss 1500V IXTN8N150L
Text: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN8N150L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1500V = 8A Ω = 5.0Ω RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C
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IXTN8N150L
OT-227
E153432
338B2
SOT-227B Outline
Vdss 1500V
IXTN8N150L
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PDF
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Untitled
Abstract: No abstract text available
Text: High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 IXTK20N150 IXTX20N150 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR
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Original
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IXTK20N150
IXTX20N150
O-264
100ms
20N150
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PDF
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IXTH4N150
Abstract: No abstract text available
Text: High Voltage Power MOSFET VDSS ID25 IXTH4N150 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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Original
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IXTH4N150
O-247
100ms
4N150
0-26-10-A
IXTH4N150
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PDF
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IXTH3N150
Abstract: No abstract text available
Text: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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Original
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IXTH3N150
O-247
100ms
3N150
0-26-10-A
IXTH3N150
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PDF
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IXTH4N150
Abstract: 4n150
Text: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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Original
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IXTH4N150
O-247
100ms
4N150
0-26-10-A
IXTH4N150
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PDF
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IXTN8N150L
Abstract: No abstract text available
Text: IXTN8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 RDS on D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A ≤ 3.6Ω Ω G S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR
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Original
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IXTN8N150L
OT-227
E153432
8N15L
100ms
6-13-A
IXTN8N150L
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PDF
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IXTH4N150
Abstract: No abstract text available
Text: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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Original
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IXTH4N150
O-247
100ms
4N150
9-12-12-C
IXTH4N150
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PDF
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IXTH3N150
Abstract: No abstract text available
Text: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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Original
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IXTH3N150
O-247
100ms
3N150
0-26-10-A
IXTH3N150
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PDF
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IXTN8N150L
Abstract: No abstract text available
Text: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTN8N150L D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω RDS on G S S miniBLOC, SOT-227 B E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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IXTN8N150L
OT-227
E153432
8N15L
100ms
IXTN8N150L
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PDF
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ixtn8n150l
Abstract: 013009 ixtn8n
Text: Preliminary Technical Information IXTN8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 RDS on D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω G S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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IXTN8N150L
OT-227
E153432
8N15L
100ms
ixtn8n150l
013009
ixtn8n
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PDF
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IXTA4N150HV
Abstract: No abstract text available
Text: High Voltage Power MOSFETs VDSS ID25 = 1500V = 4A RDS on 6 IXTA4N150HV IXTT4N150HV N-Channel Enhancement Mode Fast Intrinsic Diode TO-263HV Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M
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Original
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IXTA4N150HV
IXTT4N150HV
O-263HV
100ms
4N150
9-12-12-C
IXTA4N150HV
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PDF
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IXTT6N150
Abstract: No abstract text available
Text: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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Original
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IXTT6N150
IXTH6N150
O-268
O-247
6N150
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PDF
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Untitled
Abstract: No abstract text available
Text: IXTT12N150HV High Voltage Power MOSFET VDSS ID25 = 1500V = 12A RDS on 2 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268HV G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M
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IXTT12N150HV
O-268HV
12N150
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PDF
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