Untitled
Abstract: No abstract text available
Text: Product specification 2SA1434 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Adoption of FBET process. 0.4 3 VCE(sat 0.5V). 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 15V). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High VEBO (VEBO 0.55 Low collector-to-emitter saturation voltage
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2SA1434
OT-23
-10mA
-50mA
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cb amplifier
Abstract: FMMT5179 DSA003671
Text: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB TYPICAL CHARACTERISTICS 200 1.0 VCE=1V VCE=1V 175°C VBE - Volts hFE -Gain 25°C -55°C 0.6 0.4 100°C
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FMMT5179
900MHz
100MHz
200MHz
cb amplifier
FMMT5179
DSA003671
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cb amplifier
Abstract: common emitter amplifier FMMT5179 MPS5179 DSA003697
Text: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB TYPICAL CHARACTERISTICS 200 1.0 VCE=1V VCE=1V 175°C VBE - Volts hFE -Gain 25°C -55°C 0.6 0.4 100°C
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FMMT5179
900MHz
100MHz
200MHz
MPS5179
cb amplifier
common emitter amplifier
FMMT5179
MPS5179
DSA003697
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5P sot23
Abstract: FMMT2907 FMMT2907AR 2F PNP SOT23 FMMT2907A FMMT2907R FMMT2222 FMMT2222A DSA003691
Text: FMMT2907 FMMT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR SYMBOL FMMT2907 FMMT2907A TYP. TYP. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF
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FMMT2907
FMMT2907A
100KHz
-150mA,
-15mA
5P sot23
FMMT2907
FMMT2907AR
2F PNP SOT23
FMMT2907A
FMMT2907R
FMMT2222
FMMT2222A
DSA003691
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FMMT38A
Abstract: FMMTA12 FMMTA13 FMMTA14 FMMTA63 FMMTA64 DSA003703
Text: FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - PARTMARKING DETAILS FMMTA12 NONE FMMTA13 FMMTA63 FMMTA14 FMMTA64 E C B FMMTA12 3W FMMTA13 1M FMMTA14 1N ABSOLUTE MAXIMUM RATINGS.
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FMMTA12
FMMTA13
FMMTA14
FMMTA63
FMMTA64
FMMT38A
FMMTA12
FMMTA13
FMMTA14
FMMTA63
FMMTA64
DSA003703
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Untitled
Abstract: No abstract text available
Text: FMMTA12 Not Recommended for New Design Please Use FMMTA14 FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - PARTMARKING DETAILS FMMTA12 NONE FMMTA13 FMMTA63 FMMTA14 FMMTA64 E C
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FMMTA12
FMMTA14
FMMTA12
FMMTA13
FMMTA63
FMMTA64
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FMMT-A12
Abstract: FMMT38A FMMTA12 FMMTA13 FMMTA14 FMMTA63 FMMTA64
Text: FMMTA12 Not Recommended for New Design Please Use FMMTA14 FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - PARTMARKING DETAILS FMMTA12 NONE FMMTA13 FMMTA63 FMMTA14 FMMTA64 E C
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FMMTA12
FMMTA14
FMMTA12
FMMTA13
FMMTA63
FMMTA64
FMMT-A12
FMMT38A
FMMTA13
FMMTA14
FMMTA63
FMMTA64
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FMMTL618
Abstract: FMMTL718 DSA003705
Text: SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FMMTL718 ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE sat =210mΩ at 1.5A COMPLEMENTARY TYPE – FMMTL618 PARTMARKING DETAIL – L78 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER
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FMMTL718
FMMTL618
100ms
FMMTL618
FMMTL718
DSA003705
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ZXTN25015DFH
Abstract: ZXTP25015DFH ZXTP25015DFHTA
Text: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to
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ZXTP25015DFH
-55mV
ZXTN25015DFH
ZXTN25015DFH
ZXTP25015DFH
ZXTP25015DFHTA
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ZXTN25015DFH
Abstract: ZXTP25015DFH ZXTP25015DFHTA
Text: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to
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ZXTP25015DFH
-55mV
ZXTN25015DFH
ZXTN25015DFH
ZXTP25015DFH
ZXTP25015DFHTA
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Untitled
Abstract: No abstract text available
Text: MMBR5179LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-1.4GHz EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package
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MMBR5179LT1
MMBR5179LT1
200MHz
OT-23
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Untitled
Abstract: No abstract text available
Text: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com
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MMBR911LT1
MMBR911LT1
OT-23
MMBR911MLT1
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relay 12v 100A
Abstract: transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description Advanced process capability and package design have been used to
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ZXTP23015CFH
-36mV
ZXTN23015CFH
relay 12v 100A
transistor pnp 12V 1A Collector Current
vebo 15v sot23
ZXTN23015CFH
ZXTP23015CFH
ZXTP23015CFHTA
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Untitled
Abstract: No abstract text available
Text: MMBR5179LT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. Low noise-4.5dB@200MHz Low cost SOT23 package
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MMBR5179LT1
MMBR5179LT1
200MHz
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Untitled
Abstract: No abstract text available
Text: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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MMBR911LT1
MMBR911LT1
MMBR911MLT1
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FMMT918
Abstract: "vhf,uhf transistor" DSA003702
Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR FMMT918 ISSUE 2 JANUARY 1996 PARTMARKING DETAILS 3B E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage
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FMMT918
100MHz
60MHz,
200MHz
FMMT918
"vhf,uhf transistor"
DSA003702
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MMBR5179LT1
Abstract: No abstract text available
Text: MMBR5179LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package
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MMBR5179LT1
MMBR5179LT1
200MHz
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Untitled
Abstract: No abstract text available
Text: SuperSOT SOT23 PNP SILICON POWER SWITCHING TRANSISTORS FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 ISSUE 3 JUNE 1996 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 2.5A IC Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed) Extremely Low Saturation Voltage E.g. 10mV Typ.
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FMMT717
FMMT718
FMMT720
FMMT722
FMMT723
625mW
FMMT717
FMMT617
FMMT618
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Untitled
Abstract: No abstract text available
Text: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package
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MMBR911MLT1
MMBR911MLT1
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BFQ31R
Abstract: "UHF Transistors" BFQ31AR BFQ31 BFQ31A DSA003677
Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTORS BFQ31 BFQ31A ISSUE 3 JANUARY 1996 PARTMARKING DETAILS BFQ31 S2 BFQ31A S4 BFQ31AR S5 BFQ31R S3 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage
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BFQ31
BFQ31A
BFQ31AR
BFQ31R
100MHz
60MHz
BFQ31R
"UHF Transistors"
BFQ31AR
BFQ31
BFQ31A
DSA003677
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MMBR901
Abstract: MRF9011LT1 MRF9011MLT1 MMBR901MLT1
Text: MMBR901MLT1/MRF9011MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.8dB@1GHz ! Low cost SOT23/SOT143
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MMBR901MLT1/MRF9011MLT1
MMBR901LT1/MRF9011LT1
OT23/SOT143
MMBR901
MRF9011LT1
MRF9011MLT1
MMBR901MLT1
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FMMT5089
Abstract: IC5050 FMMT5087 FMMT5088 3025v DSA003697
Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS FMMT5088 FMMT5089 ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL FMMT5088 - 1Q FMMT5089 - 1R E C COMPLEMENTARY TYPES FMMT5088 - FMMT5087 FMMT5089 - None Available B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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FMMT5088
FMMT5089
FMMT5088
FMMT5089
FMMT5087
IC5050
FMMT5087
3025v
DSA003697
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N4209C1A
2N4209C1B
-50mA
360mW
05mW/Â
2N4209C1B
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 2 - JANUARY 1996_ PARTMARKING D E T A ILS - 3B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V VALUE UNIT cbo 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage
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lc-10mA,
100MHz
60MHz,
200MHz
Width-300ns.
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