Untitled
Abstract: No abstract text available
Text: 48400 Fremont Blvd. Fremont, CA 94538 Tel: 510 445-3068 x244 Fax: (510) 445-3060 2.125/2.5 Gbps 850 nm VCSEL LC-TOSA (Preliminary) Product Description: The LuxNet VG2A-9100 LC-TOSA (Transmitter Optical Sub-Assembly) is designed for high speed, high performance LC-TOSA data communication and telecommunication applications. This device is
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VG2A-9100
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S2083
Abstract: No abstract text available
Text: MAAP-011027 Amplifier, Power, 8 W 5.2 - 5.9 GHz Rev. V1 VD2a VD2a VD1a VG2a 1 15 GND GND GND RFIN RFOUT GND GND 5 11 10 6 Each device is 100% RF tested to ensure performance compliance. GND VD2b GND VD2b The MAAP-011027 is a 2-stage, 8 W saturated C-band power amplifier in a 5 mm 20 lead PQFN
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MAAP-011027
20-lead
MAAP-011027
S2083
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Untitled
Abstract: No abstract text available
Text: MAAP-011027 Amplifier, Power, 8 W 5.2 - 5.9 GHz Rev. V2 VG2a VD1a VD2a VD2a 18 17 16 1 15 GND GND 2 14 GND RFIN 3 13 RFOUT GND 4 12 GND GND 5 11 GND This power amplifier is ideally suited for Point-toPoint Radios and C-band radar applications. 6 7 8 9 10 VD2b
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MAAP-011027
20-lead
MAAP-011027
M0-220,
S2083
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to56
Abstract: TO-56 header TO-56 VCSEL photodiode TO56 cap
Text: 48400 Fremont Blvd. Fremont, CA 94538 Tel: 510 445-3068 x244 Fax: (510) 445-3060 2.125/2.5 Gbps 850 nm VCSEL TO-56 Header (Preliminary) Product Description: The LuxNet VG2A-8101 TO-56 (Header Assembly) is designed for high speed, high performance data communication applications. This device is integrated with an 850 nm 2.5Gbps VCSEL, a TO-56 header
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VG2A-8101
to56
TO-56 header
TO-56
VCSEL photodiode
TO56 cap
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100C
Abstract: VG2A-7400 VCSEL die
Text: 48400 Fremont Blvd. Fremont, CA 94538 USA Tel: 510 445-3068 x244 Fax: (510) 445-3060 th 50, Lung-Yuan 7 Road, Lung-Tan Tao-Yuan Hsien, TAIWAN Tel: (03) 409-1335 x230/235 Fax: (03) 409-1339 10 Gbps 850 nm VCSEL 1x4 Array Data Sheet Part Number: VG2A-7400
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x230/235
VG2A-7400
100C
VG2A-7400
VCSEL die
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VG2A-7000
Abstract: No abstract text available
Text: th 50, Lung-Yuan 7 Road, Lung-Tan Tao-Yuan Hsien, TAIWAN Tel: 03 409-1335 x230/235 Fax: (03) 409-1339 48400 Fremont Blvd. Fremont, CA 94538 USA Tel: (510) 445-3068 x244 Fax: (510) 445-3060 2.5 Gbps 850 nm VCSEL Data Sheet Part Number: VG2A-7000 Applications: 2.125 / 2.5 / 3.125 Gbps
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x230/235
VG2A-7000
100oC)
VG2A-7000
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100C
Abstract: VG2A-7800
Text: th 50, Lung-Yuan 7 Road, Lung-Tan Tao-Yuan Hsien, TAIWAN Tel: 03 409-1335 x230/235 Fax: (03) 409-1339 48400 Fremont Blvd. Fremont, CA 94538 USA Tel: (510) 445-3068 x244 Fax: (510) 445-3060 30 Gbps 850 nm VCSEL 1x12 Array Data Sheet Part Number: VG2A-7800
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x230/235
VG2A-7800
100C
VG2A-7800
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XP1073-BD
Abstract: xp1073 DM6030HK XP107
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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P1073-BD
16-Feb-10
MIL-STD-883
XP1073-BD
XP1073-BD
xp1073
DM6030HK
XP107
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30SPA0553
Abstract: 30SPA0557 84-1LMI
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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30SPA0553
01-Sep-05
MIL-STD-883
30SPA0553
30SPA0557
84-1LMI
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P1015-BD
Abstract: No abstract text available
Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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10-Aug-07
P1015-BD
MIL-STD-883
XP1015-BD-000V
XP1015-BD-EV1
XP1015
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XP1006-BD
Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
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XP1006-BD
MIL-STD-883
01-Sep-10
XP1006
XP1006-BD
X-band GaAs pHEMT MMIC Chip
GAAS FET AMPLIFIER x-band 10w
Chip Advanced Tech
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P1006BD
Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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11-Nov-08
P1006-BD
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-EV1
P1006BD
XP1006-BD
GAAS FET AMPLIFIER x-band 10w
Mimix Asia
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44MPA0478
Abstract: DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD
Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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P1028-BD
17-Apr-07
MIL-STD-883
XP1028-BD-000V
XP1028-BD-EV1
XP1028
44MPA0478
DM6030HK
TS3332LD
XP1028-BD
XP1028-BD-000V
XP1028-BD-EV1
P1028-BD
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inductance R600
Abstract: No abstract text available
Text: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection
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01-Mar-05
MIL-STD-883
inductance R600
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tanaka gold wire
Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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13-Mar-06
P1006
MIL-STD-883
XP1006
tanaka gold wire
MMIC X-band amplifier
P1006
DM6030HK
TS3332LD
XP1006
XP1006 bonding
X-band GaAs pHEMT MMIC Chip
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MAAP-010171
Abstract: radar amplifier s-band
Text: MAAP-010171 Amplifier, Power, 8 W 2.5 - 3.5 GHz Rev. V2 Functional Schematic Features • Linear Gain: 27 dB Saturated Output Power: +39 dBm Pulsed 50 Ω Input / Output Match Lead-Free 5 mm 20-lead PQFN Package Halogen-Free “Green” Mold Compound
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MAAP-010171
20-lead
MAAP-010171
radar amplifier s-band
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P1016
Abstract: DM6030HK XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic
Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD February 2010 - Rev 15-Feb-10 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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P1016-BD
15-Feb-10
MIL-STD-883
XP1016-BD
XP1016-BD-EV1
XP1016
P1016
DM6030HK
XP1016-BD
XP1016-BD-000V
XP1016-BD-EV1
AuSn eutectic
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Untitled
Abstract: No abstract text available
Text: Agilent 1GG6-4080 0.155 – 43 Gb/s Differential I/O, High Power, Output Amplifier Data Sheet Features • Frequency range: 50 GHz single–ended , 30 GHz (diff.) • Single–ended or fully differential I/O operation • Low additive jitter: 600 fs, (43 Gb/s 231 – 1 PRBS, RMS typ.)
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1GG6-4080
5991-1251EN
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9701455-S-J1
Abstract: APH184C
Text: APH184C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 27 to 31 GHz • Linear gain: >10 dB • Pout > 3 0 dBm • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4.5 V at 1.1 Amps
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APH184C
APH184C
SA051
9701455-S-J1
9701455-S-J1
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SA051
Abstract: HEMT Amplifier
Text: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA
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APH212C
APH212C
SA051
006/J-2
SA051
HEMT Amplifier
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Untitled
Abstract: No abstract text available
Text: 0 0 1 4 5 7 7 G G 0 G 72 1 226 A W T 9 20 E h M N X i l C S TX POWER MMIC ’ Advanced Product Information RevO Your GaAs IC Source 900/1900 MHz Dual Band AMPS /PCS GaAs Power Amplifier IC DESCRIPTION: The AWT920 is a highly integrated GaAs monolithic Power Amplifier
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AWT920
6/2/97-AWT920
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Untitled
Abstract: No abstract text available
Text: AWT919D TX POWER MMIC E W iDIGIG* Advanced Product Information Your GaAs IC Source REV: 1 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both 824 - 849 MHz AMPS/DAMPS and
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AWT919D
T919D
kZ25H3
06/07/98-AWT919d
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Untitled
Abstract: No abstract text available
Text: E m m AWT919D TX POWER MMIC a c s ' Your GaAs IC Source A d va n ce d P ro d u ct ln fo r 1™ 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: V D IJ k YD2JL The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both
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AWT919D
T919D
Q0000409CW4H40000MQ
04CHKCW
06/07/98-AWT919d
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TUBE EL3
Abstract: m6411 tube ek2 ampli schema condensateur electrolytique SCHEMA chauffage par induction philips miniwatt philips miniwatt ez miniwatt cy2 2X40
Text: BULLETIN T E C H N IQ U E EDITE PAR LE BUREAU D’ETUDES DE LA S.A. PHILIPS 2, cite PARADIS, PARIS. TEL TAITÔ. 69-80 99-80. MAI-JUILLET 1936 l a m p e s RECEPTRICES "MINI WATT" TUBES AM PLI FICATEURS T U B E S REDRESSEURS TUBES A RAYONS CATHODIQUES T U
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