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    VGS 20V Search Results

    VGS 20V Result Highlights (5)

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    UA79M20CKC Rochester Electronics LLC Fixed Negative Standard Regulator, 20V, BIPolar, PSFM3, PACKAGE-3 Visit Rochester Electronics LLC Buy
    RAA2142204GP3#JA0 Renesas Electronics Corporation 20V, 150mA Linear Regulator Visit Renesas Electronics Corporation
    RAA2142504GSP#HA0 Renesas Electronics Corporation 20V, 500mA Linear Regulator Visit Renesas Electronics Corporation
    RAA2142504GNP#HC0 Renesas Electronics Corporation 20V, 500mA Linear Regulator Visit Renesas Electronics Corporation
    2SJ647-T1-A Renesas Electronics Corporation Pch Single Power Mosfet -20V -0.4A 1450Mohm Ssp/Sc-70 Visit Renesas Electronics Corporation
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    Adam Technologies Inc HBHR-B2-20-VG-SMT

    Headers & Wire Housings BH 1.27MM 20P SMT GOLD H=5.4MM BLACK
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    VGS 20V Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: θ µA Ʊ ≤ Typical Output Characteristics Typical Output Characteristics 12 8 Drain Current A Vgs = 8V 8 Drain Current Id (A) Pch = 125W 10 Vgs = 7V Vgs = 6V 6 Vgs = 5V Vgs = 4V Vgs = 3V Vgs = 2V Vgs = 1V 4 2 20 40 VDS (V) 7 Vgs = 8V 6 Vgs = 7V 5 Vgs = 6V


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: θ µA Ʊ ≤ Typical Output Characteristics Typical Output Characteristics 12 8 Drain Current A Vgs = 8V 8 Drain Current Id (A) Pch = 125W 10 Vgs = 7V Vgs = 6V 6 Vgs = 5V Vgs = 4V Vgs = 3V Vgs = 2V Vgs = 1V 4 2 20 40 VDS (V) 7 Vgs = 8V 6 Vgs = 7V 5 Vgs = 6V


    Original     		PDF

    FKV660S

    Abstract: ISD50A
    Text: MOS FET FKV660S 78 V BR DSS ID=100µA, VGS=0V VGS =+20V VGS =–10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=25A VGS=10V, ID=25A IGSS IDSS VTH Re (yfs) RDS(ON) Ciss Coss Crss t d(on) tr t d(off) tf VSD VDS=10V f=1.0MHz VGS=0V ID=25A VDD 12V RL=0.48Ω, VGS=10V


    Original     		PDF FKV660S O220S FKV660S ISD50A

    FKV660S

    Abstract: No abstract text available
    Text: MOS FET FKV660S 98 ID=100µA, VGS=0V VGS =+20V VGS =–10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=25A VGS=10V, ID=25A IGSS IDSS VTH Re yfs RDS(ON) Ciss Coss Crss t d(on) tr t d(off) tf VSD VDS=10V f=1.0MHz VGS=0V ID=25A VDD=12V RL=0.48Ω VGS=10V


    Original     		PDF FKV660S O220S FKV660S

    Untitled

    Abstract: No abstract text available
    Text: θ µA Ʊ ≤ Typical Output Characteristics Typical Output Characteristics 9 12 VGS = 8V VGS = 7V 8 Pch = 125W VGS = 6V 8 Drain Current A Drain Current (A) 10 VGS = 5V 6 VGS = 4V 4 VGS = 3V 2 20 40 VDS (V) 60 6 Vgs = 5V 5 4 Vgs = 4V 3 Vgs = 3V 2 VGS = 2V


    Original     		PDF

    FKV560S

    Abstract: No abstract text available
    Text: MOS FET FKV560S 96 ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re yfs RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V max


    Original     		PDF FKV560S O220S FKV560S

    Untitled

    Abstract: No abstract text available
    Text: θ G S D µA Ʊ ≤ Typical Output Characteristics Typical Output Characteristics 12 8 Drain Current A Vgs = 8V 8 Drain Current Id (A) Pch = 125W 10 Vgs = 7V Vgs = 6V 6 Vgs = 5V Vgs = 4V Vgs = 3V Vgs = 2V Vgs = 1V 4 2 20 40 VDS (V) 7 Vgs = 8V 6 Vgs = 7V


    Original     		PDF

    FKV460

    Abstract: FM20
    Text: MOS FET FKV460 under development 72 Electrical Characteristics Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss


    Original     		PDF FKV460 FKV460 FM20

    Untitled

    Abstract: No abstract text available
    Text: MOS FET FKV660 under development Electrical Characteristics Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss


    Original     		PDF FKV660

    FKV660

    Abstract: FM20
    Text: MOS FET FKV660 under development Electrical Characteristics Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss


    Original     		PDF FKV660 FKV660 FM20

    FKV560

    Abstract: FM20
    Text: MOS FET FKV560 under development * PW 100µs, duty 1% 74 Electrical Characteristics Symbol Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS


    Original     		PDF FKV560 FKV560 FM20

    FKV460

    Abstract: FM20
    Text: MOS FET FKV460 under development 72 Electrical Characteristics Test Conditions ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss


    Original     		PDF FKV460 FKV460 FM20

    FKV460

    Abstract: No abstract text available
    Text: MOS FET FKV460 under development Electrical Characteristics Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –10V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss


    Original     		PDF FKV460 O220F FKV460

    CEM2539A

    Abstract: No abstract text available
    Text: CEM2539A Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES D1 D2 5 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 4.5V. G1 RDS(ON) = 40mΩ @VGS = 2.5V. G2 -20V, -4A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V.


    Original     		PDF CEM2539A CEM2539A

    FKV560FP

    Abstract: No abstract text available
    Text: MOS FET FKV560FP under development * PW Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr


    Original     		PDF FKV560FP FM100 FKV560FP

    FKV560

    Abstract: FM20
    Text: MOS FET FKV560 under development 74 Symbol Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on)


    Original     		PDF FKV560 FKV560 FM20

    FKV460FP

    Abstract: No abstract text available
    Text: MOS FET FKV460FP under development * PW Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr


    Original     		PDF FKV460FP FM100 FKV460FP

    Untitled

    Abstract: No abstract text available
    Text: SSF2783 GENERAL FEATURES N-Channel VDS = 20V,ID = 3.5A RDS ON < 60mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V RDS(ON) < 150mΩ @ VGS=1.8V ● P-channel N-channel P-Channel VDS = -20V,ID = -2.7A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 145mΩ @ VGS=-2.5V


    Original     		PDF SSF2783 25unless

    Untitled

    Abstract: No abstract text available
    Text: DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on)max 20V 15.5mΩ @ VGS = 4.5V 16.5mΩ @ VGS = 4.0V 19mΩ @ VGS = 3.1V 20mΩ @ VGS = 2.5V 30mΩ @ VGS = 1.8V ID TA = +25°C 7.5A 7.3A 6.9A 6.7A 5.4A • Low On-Resistance • Low Gate Threshold Voltage


    Original     		PDF DMN2016LHAB DS36133

    FKV460S

    Abstract: No abstract text available
    Text: MOS FET FKV460S 88 Electrical Characteristics ID = 100µA, VGS = 0V VGS = +20V VGS = –10V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re yfs RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V


    Original     		PDF FKV460S O220S FKV460S

    CEM2539

    Abstract: No abstract text available
    Text: CEM2539 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES D1 D2 5 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V. G1 RDS(ON) = 33mΩ @VGS = 2.5V. *1K G2 -20V, -4.0A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V.


    Original     		PDF CEM2539 CEM2539

    DMN2016LHAB

    Abstract: No abstract text available
    Text: DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(on)max 20V 15.5m @ VGS = 4.5V 16.5m @ VGS = 4.0V 19m @ VGS = 3.1V 20m @ VGS = 2.5V 30m @ VGS = 1.8V Features ID TA = +25°C 7.5A 7.3A 6.9A 6.7A 5.4A • Low On-Resistance  Low Gate Threshold Voltage


    Original     		PDF DMN2016LHAB DS36133 DMN2016LHAB

    FKV560S

    Abstract: No abstract text available
    Text: MOS FET FKV560S under development 76 ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz


    Original     		PDF FKV560S O220S FKV560S

    Untitled

    Abstract: No abstract text available
    Text: MOS FET FKV460S 94 Electrical Characteristics ID = 100µA, VGS = 0V VGS = +20V VGS = –10V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re yfs RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V


    Original     		PDF FKV460S O220S