TRIMMER capacitor 5-60 pF
Abstract: vhf linear amplifier philips carbon film resistor SC08a GP 809 Transistor 2222 philips Trimmer 60 pf BLY89 carbon resistor vk 200
Text: VHF LINEAR Ampl. 25 W BLY89 Page 1 of 3 VHF Linear Amplifier BLY 89C There is not a personal design on this page, just I've transfered useful notes from PHILIPS RF Bipolar Transistors - Data HandBook (1993 Edition), about BLY89C VHF Power transistor, which is very popular among Amateur Radio "homebrewers".
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BLY89)
BLY89C
SC08a
20and
20Settings\Administrator\My
20Documents\bly
TRIMMER capacitor 5-60 pF
vhf linear amplifier
philips carbon film resistor
SC08a
GP 809
Transistor 2222
philips Trimmer 60 pf
BLY89
carbon resistor
vk 200
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transistor marking 3em
Abstract: MMBTH10
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product Marking Code: 3EM NPN VHF/UHF
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MMBTH10
OT-23
100MHz,
300us,
transistor marking 3em
MMBTH10
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transistors cross reference
Abstract: No abstract text available
Text: SILICON POWER TRANSISTORS VHF TV/LINEAR TRANSISTORS SGS-THOMSON VHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed to assure maximum system availability and ruggedness.
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SD1476
SD1458
SD1455
SD1459
SD1456*
28yed
transistors cross reference
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M111
Abstract: M130 M164 SD1455 SD1456 SD1458 SD1459 SD1476 TCC3100
Text: SILICON POWER TRANSISTORS VHF TV/LINEAR TRANSISTORS SGS-THOMSON VHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed to assure maximum system availability and ruggedness.
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SD1476
SD1458
SD1455
SD1459
SD1456
TCC3100
M111
M130
M164
SD1455
SD1456
SD1458
SD1459
SD1476
TCC3100
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TPV3100
Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE
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twF150-50F
HF150-50S
HF250-50
HF100-28
HF220-28
HF220-50
TVU014
HF75-50S
ASAT25
ASI4003
TPV3100
TP3024A
HF power amplifier TPV3100
PT9783
MRF466
mrf4070
tp9383
tp2304
mrf433
MRF492A
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2N4957 JANTX
Abstract: No abstract text available
Text: 2N4957 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV PNP Silicon VHF-UHF Amplifier Transistors Qualified per MIL-PRF-19500/426 DESCRIPTION The 2N4957 is a military qualified silicon PNP amplifier transistor designed for VHF-UHF
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2N4957
MIL-PRF-19500/426
2N4957
T4-LDS-0313,
2N4957 JANTX
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transistors mos
Abstract: No abstract text available
Text: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics
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3N212
3N212
com/3n212
transistors mos
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2n3632
Abstract: No abstract text available
Text: 2N3632 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WI. 1 of 1 Home Part Number: 2N3632 Online Store 2N3632 Diodes RF Transistors & M IC RO WAVE TRANSISTO RS VHF - UHF C LASS C WIDE BAND Integrated Circuits
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2N3632
com/2n3632
2N3632
O-210AB
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j105 transistor
Abstract: MS1009 J108 - TRANSISTOR
Text: MS1009 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS Features 136 – 175 MHz 28 VOLTS POUT = 125 WATTS GP = 9.2 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1009 is a silicon NPN bipolar transistor designed primarily for VHF communication applications. Gold
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MS1009
MS1009
Temperatu15
136MHz
160MHz
175MHz
j105 transistor
J108 - TRANSISTOR
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3N211
Abstract: Depletion
Text: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics
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3N211
3N211
com/3n211
Depletion
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SOT262A2
Abstract: SOT121 Package torque RF Power Transistors MBA512 philips rf transistors SOT56 sot122f sot160 SOT-56 SOT-55
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Transistors for HF and VHF 1995 Nov 24 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF handbook, full pagewidth 0.86 max Package outlines 45 o
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SC08a
O-39/1;
O-39/3)
MBA512
MBC818
OT279.
OT289.
MBC042
SOT262A2
SOT121 Package torque
RF Power Transistors
MBA512
philips rf transistors
SOT56
sot122f
sot160
SOT-56
SOT-55
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CHIP TRANSISTOR
Abstract: gp 219 NPN planar RF transistor SD1127
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT 4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN
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SD1127
SD1127
MSC0936
CHIP TRANSISTOR
gp 219
NPN planar RF transistor
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SD1019
Abstract: No abstract text available
Text: SD1019 RF AND MICROWAVE TRANSISTORS VHF APPLICATIONS Features • • • • • 136 MHz 13.5 V COMMON EMITTER POUT = 30 W MIN. GAIN = 4.5 dB DESCRIPTION: The SD1019 is a 28 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications.
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SD1019
SD1019
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF TRANSISTOR 2N918 TO-72 Metal Can Package NPN TRANSISTORS, BEST SUITED FOR LOW NOISE VHF AND VHF AMPLIFIER MIXER AND OSCILLATOR APPLICATIONS.
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2N918
C-120
2N918Rev270701
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bf679
Abstract: BF680 BF 679 75176 PD 680 820Q
Text: BF 679 • BF 680 Silizium-PNP-HF-T ransistoren Silicon PNP RF Transistors Anwendungen: BF 679: Regelbare UHF/VHF-Elngangsstufein BF 680: UHF/VHF-Oszillator und M ischerstufen Applications: BF 679: Gain controlled UHF/VHF input stages BF 680: UHF/VHF-Oscillator and m ixer stages
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MFE201
Abstract: MFE203 MFE201 application notes MFE202 s163h dual-gate
Text: '' N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED M O S FIELD-EFFECT TRANSISTORS • MFE201 thru . , . depletion mode dual gate transistors designed for VHF amplifier and mixer applications, MFE203 • MFE201 — VHF Amplifier MFE202 — VHF Mixer MFE203 — IF Am plifier
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MFE201
MFE202
MFE203
MFE201,
MFE201
MFE203
MFE201 application notes
MFE202
s163h
dual-gate
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MRF239
Abstract: mrf239 MOTOROLA Motorola 2N6080 2N5591 MOTOROLA MRF212 MRF238 MOTOROLA MRF4070 Motorola 2N6083 MRF247 mrf237 MOTOROLA
Text: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued C ASE 317D-01 C ASE 316-01 CASE 26-03 TO-2Q6AB VHF Applications (continued) 136-174 MHz, High-Band/VHF FM Transistors The “workhorse” VHF FM High-Band is served by Motorola with the broadest range of devices arid package combinations in
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317D-01
2N4427
MRF604
T0-206AB
MRF553
MRF607
O-205AD
2N6255
T0-205AD
MRF239
mrf239 MOTOROLA
Motorola 2N6080
2N5591 MOTOROLA
MRF212
MRF238 MOTOROLA
MRF4070
Motorola 2N6083
MRF247
mrf237 MOTOROLA
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2SC1365
Abstract: NE741 2sc1252 74113 NE74100
Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 1.7 GHz The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low
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NE74100
NE74113
NE74114
NE741
E74100)
NE74114
E74100,
NE74100
2SC1365
2sc1252
74113
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series
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NE74000
NE74014
NE740
NE90115
MIL-S-19500.
IS12I
427SB5
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SN 74114
Abstract: 2SC1365 ta 5732 2SC1252 s735 NE74113
Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low distortion and noise figures make it an excellent choice for
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NE74100
NE74113
NE74114
NE741
NE74100)
NE74114
procedur64
4S7S25
00L573L
SN 74114
2SC1365
ta 5732
2SC1252
s735
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Untitled
Abstract: No abstract text available
Text: Micmsemi m m m RF Products a Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL
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SD1127
MSC0936
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series
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NE74000
NE74014
NE740
NE90115
quali16
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2SC1393
Abstract: 2SC1394 c1393 2sc13
Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC1393,2SC1394 NPN SILICON EPITAXIAL TRANSISTOR 2SC1393 : VHF RF AMPLIFIER 2S C 1394 : VHF MIXER FOR TV TUNER FEATURES PACKAGE DIMENSIONS U nit : mm • Low NF high G pe. NF = 2.0dB TV P . Gpe = 24dB TYP. (f = 200M Hz)
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2SC1393
2SC1394
2SC1393
200MHz,
2SC1394
c1393
2sc13
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BF362
Abstract: TFK S 741 gain bandwidth product TFK 03 BF363
Text: BF 362 * BF 363 Silízium-NPN-HF-Planar-Transistoren Silicon NPN RF Planar Transistors Anwendungen: BF 362: Regelbare UHF/VHF-Eingangsstufen BF 363: Selbstschw ingende M ischerstufen Applications: BF 362: Gain co ntrolled UHF/VHF input stages BF 363: S elf oscillating m ixer stages
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