Untitled
Abstract: No abstract text available
Text: 1N4150W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type designation 1N4150, and the MiniMELF case with
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1N4150W
DO-35
1N4150,
LL4150.
OD-123
1N4150W-GS18
1N4150W-GS08
D-74025
23-Apr-04
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Untitled
Abstract: No abstract text available
Text: 1N4150W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type
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1N4150W-V
DO-35
1N4150,
LL4150.
AEC-Q101
OD-123
GS18/10K
10K/box
GS08/3K
15K/box
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Untitled
Abstract: No abstract text available
Text: 1N4150W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type
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Original
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PDF
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1N4150W-V
DO-35
1N4150,
LL4150.
AEC-Q101
OD-123
GS18/10K
10K/box
GS08/3K
15K/box
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Untitled
Abstract: No abstract text available
Text: 1N4150W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type
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Original
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PDF
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1N4150W-V
DO-35
1N4150,
LL4150.
AEC-Q101
OD-123
GS18/10K
10K/box
GS08/3K
15K/box
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Untitled
Abstract: No abstract text available
Text: 1N4150W-V Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type designation 1N4150, and the
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Original
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PDF
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1N4150W-V
DO-35
1N4150,
LL4150.
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
1N4150W-V
1N4150W-V-GS18
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vishay SOD-123 data code
Abstract: A4 marking diode SOD 123 1N4150W-V-GS08
Text: 1N4150W-V Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type designation 1N4150, and the
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Original
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PDF
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1N4150W-V
DO-35
1N4150,
LL4150.
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
1N4150W-V
1N4150W-V-GS18
vishay SOD-123 data code
A4 marking diode SOD 123
1N4150W-V-GS08
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Vishay Diode A4
Abstract: 1N4150 LL4150
Text: 1N4150W-V Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • For general purpose and switching e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4150, and the MiniMELF case with the
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1N4150W-V
DO-35
1N4150,
LL4150.
2002/95/EC
2002/96/EC
OD-123
1N4150W-V-GS18
1N4150W-V-GS08
Vishay Diode A4
1N4150
LL4150
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Vishay Diode A4
Abstract: 1N4150 LL4150 1N4150W-V-GS08
Text: 1N4150W-V Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • For general purpose and switching e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4150, and the MiniMELF case with the
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Original
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PDF
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1N4150W-V
DO-35
1N4150,
LL4150.
2002/95/EC
2002/96/EC
OD-123
1N4150W-V-GS18
1N4150W-V-GS08
Vishay Diode A4
1N4150
LL4150
1N4150W-V-GS08
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Untitled
Abstract: No abstract text available
Text: VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation
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VS-70MT060WSP
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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4N32 test circuit
Abstract: 4N32 ATK63 4N33 optocoupler 4n33 4n33 optocoupler switches circuits
Text: 4N32/ 4N33 Vishay Telefunken Optocoupler with Photodarlington Output Description The 4N32 and 4N33 consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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E-76222
4N32 test circuit
4N32
ATK63
4N33
optocoupler 4n33
4n33 optocoupler
switches circuits
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IC 4N35 circuit diagram
Abstract: 4N35GV 4N35 applications 4N25 4N25V 4N35 4N35V IF88
Text: 4N25 G V/ 4N35(G)V Series Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
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4N25G/
4N35G
IC 4N35 circuit diagram
4N35GV
4N35 applications
4N25
4N25V
4N35
4N35V
IF88
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CNY75G Series
Abstract: CTR50 CNY75 CNY75A CNY75B CNY75C CNY75GC1 CNY7
Text: CNY75 G Series Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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CNY75
D-74025
CNY75G Series
CTR50
CNY75A
CNY75B
CNY75C
CNY75GC1
CNY7
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4N33
Abstract: No abstract text available
Text: 4N32/ 4N33 Vishay Telefunken Optocoupler with Photodarlington Output Description The 4N32 and 4N33 consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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E-76222
D-74025
4N33
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CNY75
Abstract: CNY75A CNY75B CNY75C CNY75GC1
Text: CNY75 G Series Vishay Semiconductors Optocoupler with Phototransistor Output Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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CNY75
D-74025
CNY75A
CNY75B
CNY75C
CNY75GC1
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phototransistor microwaves
Abstract: K3010P K3011P K3011PG K3012P
Text: K3010P G Series Vishay Telefunken Optocoupler with Phototriac Output Description The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a
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K3010P
D-74025
phototransistor microwaves
K3011P
K3011PG
K3012P
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Vishay Telefunken Phototransistor
Abstract: No abstract text available
Text: CNY75 G Series Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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CNY75
D-74025
Vishay Telefunken Phototransistor
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CNY75G
Abstract: CTR50 CNY75 IC 7402 CNY75GC1 CNY75A CNY75B CNY75C
Text: CNY75 G Series Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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CNY75
CNY75G
CTR50
IC 7402
CNY75GC1
CNY75A
CNY75B
CNY75C
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Untitled
Abstract: No abstract text available
Text: K3010P G Series Vishay Telefunken Optocoupler with Phototriac Output Description The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a
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K3010P
D-74025
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4N35 applications
Abstract: construction in 4n35 optocoupler 4N25 4N25V 4N35 4N35V 4N35GV IC 4N35 circuit diagram
Text: 4N25 G V/ 4N35(G)V Series Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
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D-74025
4N35 applications
construction in 4n35 optocoupler
4N25
4N25V
4N35
4N35V
4N35GV
IC 4N35 circuit diagram
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atk63
Abstract: 4N28 4n26 example circuit 4N26 4N25 applications optocoupler 4N25
Text: 4N25/ 4N26/ 4N27/ 4N28 VISHAY Vishay Telefun ken Y Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline
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OCR Scan
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PDF
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E-76222
11-Ja
atk63
4N28
4n26 example circuit
4N26
4N25 applications
optocoupler 4N25
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K847P
Abstract: No abstract text available
Text: K817P/ K827PH/ K847PH VISHAY Vishay Telefunken Y Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package.
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OCR Scan
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PDF
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K817P/
K827PH/
K847PH
K847PH
16-lead
K827PH
K847P
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CNY75G Series
Abstract: No abstract text available
Text: CNY75 G Series VISHAY Vishay Telefunken ▼ Optocoupler with Phototransistor Output Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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OCR Scan
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PDF
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CNY75
CNY75G
11-Ja
CNY75G Series
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k302p
Abstract: No abstract text available
Text: K3020P G Series VISHAY Vishay Telefunken T Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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OCR Scan
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PDF
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K3020P
11-Jan-99
k302p
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diode chn 940
Abstract: chn 940 TSAL6400 L6400
Text: TSAL6400 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package Description T S A L6400 is a high efficiency infrared em itting diode in G aAIAs on G aAs technology, m olded in clear, bluegrey tinted plastic packages. In com parison w ith the standard G aAs on G aAs
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TSAL6400
L6400
D-74025
ct-98
diode chn 940
chn 940
TSAL6400
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