Si5475BDC
Abstract: Si5475BDC-T1-E3
Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • TrenchFET Power MOSFET: 1.8-V Rated Qg (Typ) RoHS
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Si5475BDC
Si5475BDC-T1--E3
08-Apr-05
Si5475BDC-T1-E3
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231B DIODE
Abstract: Si8435DB
Text: Si8435DB Vishay Siliconix New Product P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET
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Si8435DB
08-Apr-05
231B DIODE
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Si4322DY-T1-E3
Abstract: SI4322DY
Text: Si4322DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0085 at VGS = 10 V 18 0.0125 at VGS = 4.5 V 15 Qg (Typ) COMPLIANT
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Si4322DY
Si4322DY-T1-E3
08-Apr-05
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SD103 SCHOTTKY
Abstract: No abstract text available
Text: SD103AWS-V, SD103BWS-V, SD103CWS-V Vishay Semiconductors Small Signal Schottky Diodes Features • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • This diode is also available in the Mini-MELF
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SD103AWS-V,
SD103BWS-V,
SD103CWS-V
SD103
LL103A
LL103C,
DO-35
SD103A
SD103C
OD-123
SD103 SCHOTTKY
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si4456
Abstract: TB-17 Si4456DY Si4456DY-T1-E3
Text: Si4456DY Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A)a 0.0038 at VGS = 10 V 33 0.0045 at VGS = 4.5 V 31 Qg (Typ) 37.5 nC • TrenchFET Gen II Power MOSFET • 100 % Rg and UIS Tested RoHS
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Si4456DY
Si4456DY-T1-E3
08-Apr-05
si4456
TB-17
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Untitled
Abstract: No abstract text available
Text: SD103AW-V, SD103BW-V, SD103CW-V Vishay Semiconductors Small Signal Schottky Diodes Features • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications.
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SD103AW-V,
SD103BW-V,
SD103CW-V
SD103
LL103A
LL103C,
DO-35
SD103A
SD103C
OD-323
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Untitled
Abstract: No abstract text available
Text: End of Life . Last available purchase date is 31-Dec-2014 SiP4282 Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6, and TDFN4 1.2 mm x 1.6 mm DESCRIPTION FEATURES The SiP4282 series is a slew rate controlled high side switch. The switch is of a low ON resistance P-Channel MOSFET
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31-Dec-2014
SiP4282
SC75-6,
2002/95/EC.
2002/95/EC
2011/65/EU.
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Si4884BDY
Abstract: Si4884BDY-T1-E3
Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8
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Si4884BDY
Si4884BDY-T1-E3
25Impedance,
S-61089-Rev.
19-Jun-06
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Si4392ADY
Abstract: Si4392ADY-T1-E3
Text: Si4392ADY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A)a 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • Extremely Low Qgd WFET Technology for Low Switching Losses
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Si4392ADY
Si4392ADY-T1-E3
S-61089-Rev.
19-Jun-06
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Si4904DY-T1-E3
Abstract: S-6077
Text: Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • UIS Tested PRODUCT SUMMARY VDS V 40 rDS(on) (Ω) ID (A) 0.016 at VGS = 10 V 8 0.019 at VGS = 4.5 V 8 Qg (Typ) 5.6 RoHS COMPLIANT APPLICATIONS
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Si4904DY
Si4904DY-T1-E3
S-60779-Rev.
08-May-06
S-6077
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suu50n03-7m3p
Abstract: No abstract text available
Text: SUU50N03-7m3P Vishay Siliconix New Product N-Channel 30-V D-S WFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, e 0.0073 at VGS = 10 V 50 0.0087 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ) • Low Qgd WFET Technology • 100 % Rg and UIS Tested RoHS 15.7 nC
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SUU50N03-7m3P
O-251
SUU50N03-7m3P-E3
S-60930-Rev.
29-May-06
suu50n03-7m3p
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Si4324DY
Abstract: Si4324DY-T1-E3 si4324 S-6108
Text: Si4324DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 36 0.0042 at VGS = 4.5 V 29 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 25.5 nC APPLICATIONS
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Si4324DY
Si4324DY-T1-E3
S-61089-Rev.
19-Jun-06
si4324
S-6108
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Si4464DY-T1-E3
Abstract: Si4464DY Si4464DY-T1 72051
Text: Si4464DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • TrenchFET Power MOSFET • PWM Optimized for (Lowest Qg and Low RG) Pb-free Available
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Si4464DY
Si4464DY-T1
Si4464DY-T1-E3
08-Apr-05
72051
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SI6467BDQ-T1-E3
Abstract: Si6467BDQ
Text: Si6467BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 8.0 0.0155 at VGS = - 2.5 V - 7.0 0.020 at VGS = - 1.8 V - 6.0 • TrenchFET Power MOSFETs Pb-free - 12 Available RoHS*
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Si6467BDQ
Si6467BDQ-T1
Si6467BDQ-T1-E3
08-Apr-05
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Si4346DY
Abstract: Si4346DY-T1-E3 62446
Text: Si4346DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.023 at VGS = 10 V 8 0.025 at VGS = 4.5 V 7.5 0.030 at VGS = 3.0 V 6.8 0.036 at VGS = 2.5 V 6.0 Qg (Typ) 6.5 • TrenchFET Gen II Power MOSFET
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Si4346DY
Si4346DY-T1-E3
08-Apr-05
62446
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Si3850ADV
Abstract: No abstract text available
Text: Si3850ADV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 rDS(on) (Ω) ID (A) 0.300 at VGS = 4.5 V 1.4 0.410 at VGS = 3.0 V 1.2 0.640 at VGS = - 4.5 V - 0.96 0.980 at VGS = - 3.0 V
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Si3850ADV
Si3850ADV-T1-E3
08-Apr-05
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Si7806BDN
Abstract: Si7806BDN-T1-E3
Text: Si7806BDN Vishay Siliconix New Product N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0145 at VGS = 10 V 12.6 0.0205 at VGS = 4.5 V 10.6 • TrenchFET Power MOSFETS • PWM Optimized • New Low Thermal Resistance PowerPAK®
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Si7806BDN
Si7806BDN-T1-E3
08-Apr-05
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62031
Abstract: list of P channel power mosfet
Text: SUD50NP04-62 Vishay Siliconix New Product Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.030 at VGS = 10 V 8 0.034 at VGS = 4.5 V 8 0.032 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) N-Channel P-Channel
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SUD50NP04-62
O-252-4L
SUD50NP04-62-T4-E3
08-Apr-05
62031
list of P channel power mosfet
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Si4441EDY
Abstract: Si4441EDY-T1
Text: Si4441EDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.016 at VGS = - 10 V - 10.6 0.026 at VGS = - 4.5 V - 8.3 • TrenchFET Power MOSFET • ESD Protected: 2500 V Pb-free Available
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Si4441EDY
Si4441EDY-T1
Si4441EDY-T1-E3
S-60777-Rev.
08-May-06
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Si4911DY
Abstract: No abstract text available
Text: Si4911DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 8.4 0.023 at VGS = - 2.5 V - 7.6 0.029 at VGS = - 1.8 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process
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Si4911DY
Si4911DY-T1
Si4911DY-T1-E3
S-61005-Rev.
12-Jun-06
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Si4972DY-T1-E3
Abstract: SI4972DY
Text: Si4972DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Channel 1 Channel 2 FEATURES ID (A)a Qg (Typ) rDS(on) (Ω) 30 30 0.0145 at VGS = 10 V 10.8 0.0195 at VGS = 4.5 V 9.3 0.0265 at VGS = 10 V 7.2 0.036 at VGS = 4.5 V
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Si4972DY
Si4972DY-T1-E3
S-61089
19-Jun-06
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Si5902DC
Abstract: No abstract text available
Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
S-62424--Rev.
04-Oct-99
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Si5905DC
Abstract: MARKING CODE DB
Text: Si5905DC New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.090 @ VGS = –4.5 V "4.1 0.130 @ VGS = –2.5 V "3.4 0.180 @ VGS = –1.8 V "2.9 S1 S2 1206-8 ChipFET 1 S1 D1 G1 G1 D1 G2 S2 D2 G2
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Si5905DC
S-63998--Rev.
04-Oct-99
MARKING CODE DB
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SM305
Abstract: No abstract text available
Text: SM 305_ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s (V ) -8 •d ( A ) r D S {o n ) ( & ) 0.280 @ VGS = -4 .5 V ± 0 .9 2 0.380 @ V 6S = -2 .5 V ± 0 .7 9 0.530 @ V Gs = -1 -8 V ± 0 .6 7 \* A SOT-323 SC-70 (3-LEADS)
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OT-323
SC-70
S-63638--
01-Nov-99
SM305
SM305
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