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    VISHAY MARKING MOSFET Search Results

    VISHAY MARKING MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    VISHAY MARKING MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1907DL New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.650 @ VGS = –4.5 V "0.56 0.925 @ VGS = –2.5 V "0.47 1.310 @ VGS = –1.8 V "0.39 QC XX YY Marking Code Lot Traceability and Date Code


    Original     		Si1907DL S-99184--Rev. 01-Nov-99 PDF

    vishay siliconix code marking

    Abstract: No abstract text available
    Text: _ Sii 301 DL Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS(on) (£2) lD (mA) 3.8 e VGS = -4.5 V -180 5.0 9 VGs = -2 5 V -100 V DS(V) -20 Marking Code r LG XX £ Lot Traceability and Date Code


    OCR Scan     		S-01830-- 21-Aug-00 S-01830--Rev. vishay siliconix code marking PDF

    A96V

    Abstract: Si2326DS
    Text: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2326DS O-236 OT-23) S-2381--Rev. 23-Oct-00 A96V PDF

    Si2320DS

    Abstract: No abstract text available
    Text: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2320DS O-236 OT-23) 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2326DS O-236 OT-23) 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2320DS O-236 OT-23) S-63640--Rev. 01-Nov PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2320DS O-236 OT-23) S-63640--Rev. 01-Nov PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code


    Original     		Si2301DS O-236 OT-23) Si2301DS-T1 08-Apr-05 PDF

    Si2320DS

    Abstract: No abstract text available
    Text: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2320DS O-236 OT-23) S-63640--Rev. 01-Nov PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2320DS O-236 OT-23) 08-Apr-05 PDF

    Si2301DS-T1

    Abstract: SI2301DS A1 marking code
    Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code


    Original     		Si2301DS O-236 OT-23) Si2301DS-T1 18-Jul-08 A1 marking code PDF

    A96V

    Abstract: Si2328DS SI2328ds rev
    Text: Si2328DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2328DS (D8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2328DS O-236 OT-23) S-05372--Rev. 25-Dec-01 A96V SI2328ds rev PDF

    Si2326DS

    Abstract: A96V S2381
    Text: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si2326DS O-236 OT-23) 18-Jul-08 A96V S2381 PDF

    SI2301DS

    Abstract: Si2301DS-T1 70627
    Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code


    Original     		Si2301DS O-236 OT-23) Si2301DS-T1 S-31990--Rev. 13-Oct-03 70627 PDF

    SI5435BDC

    Abstract: Si5435BDC-T1
    Text: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code


    Original     		Si5435BDC Si5435BDC-T1--E3 18-Jul-08 Si5435BDC-T1 PDF

    P-Channel 1.8-V G-S MOSFET sot-323

    Abstract: Si1305DL
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = - 4.5 V - 0.92 0.380 @ VGS = - 2.5 V - 0.79 0.530 @ VGS = - 1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability


    Original     		Si1305DL OT-323 SC-70 S-03721--Rev. 07-Apr-03 P-Channel 1.8-V G-S MOSFET sot-323 PDF

    TP0610K-T1-E3

    Abstract: TP0610K-T1-GE3 TP0610K-T1 TP0610K P-Channel TrenchFET Power MOSFET SOT-23 TP0610KT1E3
    Text: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3.0 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 TP0610K-T1 TP0610K P-Channel TrenchFET Power MOSFET SOT-23 TP0610KT1E3 PDF

    Si1307EDL

    Abstract: Si1307DL
    Text: Si1307EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.290 @ VGS = –4.5 V "0.91 0.435 @ VGS = –2.5 V "0.74 0.580 @ VGS = –1.8 V "0.64 SOT-323 SC-70 (3-LEADS) G 1 3 LF D XX YY Marking Code


    Original     		Si1307EDL OT-323 SC-70 18-Jul-08 Si1307DL PDF

    TP0610K-T1-E

    Abstract: TP0610K-T1-E3
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		TP0610K O-236 OT-23) TP0610K 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TP0610K-T1-E TP0610K-T1-E3 PDF

    Si1301DL

    Abstract: No abstract text available
    Text: Si1301DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-323 SC-70 (3-Leads) 1 LG 3 S XX YY Marking Code G Lot Traceability and Date Code


    Original     		Si1301DL OT-323 SC-70 S-01830--Rev. 21-Aug-00 PDF

    Si2309DS

    Abstract: Si2309DS-T1
    Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code


    Original     		Si2309DS O-236 OT-23) Si2309DS-T1 Si2309DS-T1-E3 18-Jul-08 PDF

    Si5435BDC-T1

    Abstract: SI5435BDC
    Text: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code


    Original     		Si5435BDC Si5435BDC-T1--E3 08-Apr-05 Si5435BDC-T1 PDF

    Si1305DL

    Abstract: No abstract text available
    Text: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code


    Original     		Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99 PDF

    TP0610K-T1

    Abstract: TP0610K-T1-E3 0533 TP0610K TP0610K-T1-GE3
    Text: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 2002/95/lectual 18-Jul-08 TP0610K-T1 TP0610K-T1-E3 0533 TP0610K TP0610K-T1-GE3 PDF