VISHAY RF OUTPUT POWER TRANSISTOR Search Results

VISHAY RF OUTPUT POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

VISHAY RF OUTPUT POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RO3010 Abstract: j352 transistor j352 bc17a VJ2225Y Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A RO3010 j352 transistor j352 bc17a VJ2225Y	PDF
RO3010 Abstract: RF POWER VERTICAL MOSFET Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374 MRF374A RO3010 RF POWER VERTICAL MOSFET	PDF
NJM 78L08UA-ND Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,	Original	AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 NJM 78L08UA-ND nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor	PDF
MRF374A Abstract: marking c14a l1a marking Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A marking c14a l1a marking	PDF
RO3010 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 RO3010	PDF
thermistor r5t Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010 Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF373S MRF373 31JUL04 31JAN05 thermistor r5t chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010	PDF
transistor R1A 37 Abstract: 5233 mosfet J146 VJ1210y Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 transistor R1A 37 5233 mosfet J146 VJ1210y	PDF
transmitter 446 mhz Abstract: R5B transistor J960 470-860 mhz Power amplifier w Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF372 transmitter 446 mhz R5B transistor J960 470-860 mhz Power amplifier w	PDF
C3B Kemet Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 MRF372R5 C3B Kemet	PDF
J352 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A/D MRF374A MRF374A/D J352	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1316N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an	Original	MMRF1316N MMRF1316NR1	PDF
transistor j352 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF374A/D MRF374A transistor j352	PDF
transistor L1A Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A/D MRF374A MRF374A/D transistor L1A 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB	PDF
RO3010 Abstract: motorola balun variable capacitor rogers capacitor 1606 mosfet C14A MRF374 MRF374A C12A C12B Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A/D MRF374A RO3010 motorola balun variable capacitor rogers capacitor 1606 mosfet C14A MRF374 MRF374A C12A C12B	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR	Original	MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1	PDF
78L08 Abstract: BLF7G22LS-130 MMBT2222 2N2222 nxp 544 Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 02 — 25 February 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,	Original	AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 78L08 MMBT2222 2N2222 nxp 544	PDF
balun 50 kW Abstract: C14A C12A C12B C13B MRF374 MRF374A RO3010 Vishay Dale 800 ohm resistors Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A/D MRF374A balun 50 kW C14A C12A C12B C13B MRF374 MRF374A RO3010 Vishay Dale 800 ohm resistors	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR	Original	MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1	PDF
j1430 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372/D MRF372 MRF372R5 j1430	PDF
RO3010 Abstract: C14A z14b Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF374/D MRF374 MRF374/D RO3010 C14A z14b	PDF
marking c14a Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800 Text: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A MRF374A marking c14a ATC - Semiconductor Devices transistor j239 04 6274 045 000 800	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372/D MRF372 MRF372/D	PDF
C14A Abstract: MRF372 R5B transistor C10A 473 coilcraft d j937 Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF372/D MRF372 C14A MRF372 R5B transistor C10A 473 coilcraft d j937	PDF
balun 75 ohm Abstract: C14A RO3010 MRF372 c9ab Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372/D MRF372 balun 75 ohm C14A RO3010 MRF372 c9ab	PDF

VISHAY RF OUTPUT POWER TRANSISTOR Search Results

VISHAY RF OUTPUT POWER TRANSISTOR Result Highlights (5)

VISHAY RF OUTPUT POWER TRANSISTOR Datasheets Context Search

RO3010

RO3010

NJM 78L08UA-ND

MRF374A

RO3010

thermistor r5t

transistor R1A 37

transmitter 446 mhz

C3B Kemet

J352

Untitled

transistor j352

transistor L1A

RO3010

Untitled

78L08

balun 50 kW

Untitled

j1430

RO3010

marking c14a

Untitled

C14A

balun 75 ohm