TB172
Abstract: FERROXCUBE VK200 vk200 VK200 ferrite choke stackpole 57-1845-24b vk200 rf choke Stackpole 57-9074 Stackpole ferrite Toroid 57-9322 57-1845-24b
Text: RF input 50Ω L1, L2: Ferroxcube VK200 19/4B ferrite choke 56pF T1 9:1 100Ω 1/4W 10nF 5600pF 470pF 5600pF 10nF 1KΩ POT L3, L4: 6 ferrite beads each Ferroxcube 56 590 65/3B Gen Pur Diode T1: Ferrite core Stackpole 57-1845-24B T2: 7 turns of twisted pair AWG #20, Ferrite core Stackpole 57-9322
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VK200
19/4B
5600pF
470pF
65/3B
57-1845-24B
SM341
TB172
FERROXCUBE VK200
vk200
VK200 ferrite choke
stackpole 57-1845-24b
vk200 rf choke
Stackpole 57-9074
Stackpole ferrite
Toroid 57-9322
57-1845-24b
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VK200 rfc
Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
Text: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.
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NTE320/NTE320F
175MHz
NTE320
NTE320F
300MHz.
175MHz
NTE320
NTE320F
1000pF
100pF
VK200 rfc
vk200
vk200* FERROXCUBE
vk200 rfc with 6 turns
T72 5VDC
vk200-20
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vk200
Abstract: VK200-19/4B M122 SD1433
Text: SD1433 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER POUT = 10 W MIN. WITH 8.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1433 BRANDING SD1433 PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN
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SD1433
SD1433
vk200
VK200-19/4B
M122
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SD1407
Abstract: VK-200 arco 463
Text: SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 125 W MIN. WITH 15 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1407 BRANDING 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar
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SD1407
SD1407
VK-200
arco 463
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MRF166 211-07
Abstract: motorola J122 MOTOROLA J210 SD1902 BLF244 and equivalent F 2452 mosfet zener motorola 1N5925A J651 DV2820
Text: MOTOROLA Order this document by MRF166/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166 MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500
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MRF166/D
MRF166
MRF166C
MRF166C
MRF166)
MRF136,
DV2820,
BLF244,
SD1902,
ST1001
MRF166 211-07
motorola J122
MOTOROLA J210
SD1902
BLF244 and equivalent
F 2452 mosfet
zener motorola
1N5925A
J651
DV2820
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VK200-19/4B
Abstract: choke vk200 vk200 3M-K-6098 M122 SD1433
Text: SD1433 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P OUT = 10 W MIN. WITH 8.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1433 BRANDING SD1433 PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN
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SD1433
SD1433
VK200-19/4B
choke vk200
vk200
3M-K-6098
M122
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VK200 rfc
Abstract: vk200 rfc with 6 turns SD1460 vk200 choke vk200 SD1143
Text: SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION POUT = 150 W MIN. WITH 9.2 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1460 BRANDING SD1460 PIN CONNECTION DESCRIPTION
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SD1460
SD1143
VK200 rfc
vk200 rfc with 6 turns
SD1460
vk200 choke
vk200
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vk200 rfc with 6 turns
Abstract: VK200 rfc choke vk200 SD1460 vk200 vk200 choke vk200 rf choke VK200-19/4B vk200 chokes SD1143
Text: SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P OUT = 150 W MIN. WITH 9.2 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1460 BRANDING SD1460 PIN CONNECTION DESCRIPTION
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SD1460
SD1143
vk200 rfc with 6 turns
VK200 rfc
choke vk200
SD1460
vk200
vk200 choke
vk200 rf choke
VK200-19/4B
vk200 chokes
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905-170
Abstract: MRF3010 VK200 VK20019-4B
Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
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MRF3010/D
MRF3010
905-170
MRF3010
VK200
VK20019-4B
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SD1407
Abstract: VK-200 vk200 vk 200
Text: SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 125 W MIN. WITH 15 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1407 BRANDING 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar
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SD1407
SD1407
VK-200
vk200
vk 200
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SD1477
Abstract: arco arco 462 vk200 M111
Text: SD1477 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . . 175 MHz 12.5 VOLTS COMMON EMITTER P OUT = 100 W MIN. WITH 6.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1477 BRANDING SD1477 PIN CONNECTION DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon
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SD1477
SD1477
arco
arco 462
vk200
M111
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SD1477
Abstract: vk200 M111
Text: SD1477 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . . 175 MHz 12.5 VOLTS COMMON EMITTER POUT = 100 W MIN. WITH 6.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1477 BRANDING SD1477 PIN CONNECTION DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon
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SD1477
SD1477
vk200
M111
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JMC5501
Abstract: SD1480 vk200 M111
Text: SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS . . . . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING POUT = 125 W MIN. WITH 9.2 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1480 BRANDING SD1480
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SD1480
SD1480
JMC5501
vk200
M111
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DL110
Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
Text: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
DL110
VK200 20/4B inductor
VK200 inductor of high frequencies
AN211A
MRF275L
VK200
sony+IMX+179
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sd1480
Abstract: JMC5501 arco 402 datasheet vk200 M111 600lW
Text: SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS . . . . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING P OUT = 125 W MIN. WITH 9.2 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1480 BRANDING SD1480
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SD1480
SD1480
JMC5501
arco 402 datasheet
vk200
M111
600lW
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mrf455
Abstract: Motorola transistors MRF455 TRANSISTOR mrf455 MRF455 APPLICATION NOTES equivalent transistor rf "30 mhz" beads ferroxcube ferroxcube ferrite beads MRF455 motorola vk200 VK200 FERRITE
Text: MOTOROLA Order this document by MRF455/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF455 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —
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MRF455/D
MRF455
mrf455
Motorola transistors MRF455
TRANSISTOR mrf455
MRF455 APPLICATION NOTES
equivalent transistor rf "30 mhz"
beads ferroxcube
ferroxcube ferrite beads
MRF455 motorola
vk200
VK200 FERRITE
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VK200 19 4B INDUCTOR
Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L
VK200 19 4B INDUCTOR
arco 462 capacitor
capacitor 680
s12 diode
VK200 4B inductor
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2N4933
Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
Text: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec trode construction. They are especially intended to pro vide high power as class C rf amplifiers for International
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2N4932
2N4933
RCA-2N4932*
RCA-2N49331
88MHz)
2N4932
2N4933,
24-volt
ST-3250.
ST-3230.
2N4933
RCA-2N4933
VK200 INDUCTOR
choke vk200
inductor vk200
transistor 200A 24V
RCA transistors
rca 249
VK200 FERRITE
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ferroxcube for ferrite beads 56-590-65
Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065
Text: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 | . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar
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N5944
PA18936Â
2N5944
56-590-65/3B
VK200/10-3B
ferroxcube for ferrite beads 56-590-65
VK200 ferrite
inductor vk200
VK200 rfc
VK200
ferroxcube for ferrite beads
THOMSON-CSF electrolytic
VK200 INDUCTOR
565-9065
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MX20-2
Abstract: uhf motorola
Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MX20-1 MX20-2 The RF Line U H F P o w e r A m p lifie rs . designed for wide power range control as encountered in UHF cellular radio applications. 20 W ATTS 400-470 MHz RF POW ER AMPLIFIERS • MX20-1 400-440 MHz
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MX20-1
MX20-2
MX20-1
MX20-2
MX20-1,
VK200
uhf motorola
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MRFC572
Abstract: MRF572 MRF671 vk200* FERROXCUBE MRF571
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF571 MRF572 MRFC572 The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, w ide dynamic range front end am plifiers, low noise VCO's, and microwave power multipliers. • Low Noise • High Gain
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MRF571
MRF572
MRFC572
MRF671
MRF572
MRFS72
MRF571,
MRF572,
MRFC572
MRF671
vk200* FERROXCUBE
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Untitled
Abstract: No abstract text available
Text: SCS-THOMSON * 7 / SD1477 D ü flK ê œ iL iiig T n s iiD Ê i RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS . 175 MHz » 12.5 VOLTS • COMMON EMITTER ■ P out = 100 W MIN. WITH 6.0 dB GAIN DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon
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SD1477
SD1477
-K6098,
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sd1477 80
Abstract: FT1604
Text: 7 ^ 7 #. f Z • . ■ . S G S - T H O M S O N SD1477 K M ««® «! RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS 1 75 MHz 12.5 VOLTS COMMON EMITTER P out = 100 W MIN. WITH 6.0 dB GAIN PIN CONNECTION 4 1 DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon
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SD1477
SD1477
sd1477 80
FT1604
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j130 fet
Abstract: MRF27SG
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND
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MRF275G
MRF275G
j130 fet
MRF27SG
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