TB172
Abstract: FERROXCUBE VK200 vk200 VK200 ferrite choke stackpole 57-1845-24b vk200 rf choke Stackpole 57-9074 Stackpole ferrite Toroid 57-9322 57-1845-24b
Text: RF input 50Ω L1, L2: Ferroxcube VK200 19/4B ferrite choke 56pF T1 9:1 100Ω 1/4W 10nF 5600pF 470pF 5600pF 10nF 1KΩ POT L3, L4: 6 ferrite beads each Ferroxcube 56 590 65/3B Gen Pur Diode T1: Ferrite core Stackpole 57-1845-24B T2: 7 turns of twisted pair AWG #20, Ferrite core Stackpole 57-9322
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VK200
19/4B
5600pF
470pF
65/3B
57-1845-24B
SM341
TB172
FERROXCUBE VK200
vk200
VK200 ferrite choke
stackpole 57-1845-24b
vk200 rf choke
Stackpole 57-9074
Stackpole ferrite
Toroid 57-9322
57-1845-24b
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •
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MRF148
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF148 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD
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MRF148
MRF148
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175mhz
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field-Effect T ransistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •
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MRFT48
175mhz
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Untitled
Abstract: No abstract text available
Text: <£e.mi-dond\jLcko\ Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor MRF148 N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and
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MRF148
30WPEP)
-60dB
211-0istortion
d9-13)
MIL-STD-1311
2204B,
VK200
20/4B
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RF TRANSFORMER 2 UH
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF148A Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD
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MRF148A
MRF148A
RF TRANSFORMER 2 UH
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MRF148A
Abstract: mica ssb 2204B J101 VK200 RF TRANSFORMER 2 UH Unelco j101 D1130 UNELCO MICA CAPACITORS DIODE D11 ZENER
Text: Order this document by MRF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF148A Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
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MRF148/D
MRF148A
MRF148A
mica ssb
2204B
J101
VK200
RF TRANSFORMER 2 UH
Unelco j101
D1130
UNELCO MICA CAPACITORS
DIODE D11 ZENER
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MRF1946 equivalent
Abstract: J043 ic VK200 r.f choke
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Power Transistors MRF1946 MRF1946A . . . designed for 12.5 volt larg e-sig nal power am plifiers in com m ercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance
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MRF1946
MRF1946A
MRF1946A
MRF1946 equivalent
J043 ic
VK200 r.f choke
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vk200 choke
Abstract: arco 465 UNELCO MICA CAPACITORS VK200-4B arco capacitors 262 k 246 transistor fet VK200 FERRITE 2204B J101 MRF140
Text: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics
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MRF140/D
MRF140
vk200 choke
arco 465
UNELCO MICA CAPACITORS
VK200-4B
arco capacitors 262
k 246 transistor fet
VK200 FERRITE
2204B
J101
MRF140
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2N6439
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
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mrf150
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
MRF150/D*
mrf150
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VK200-20
Abstract: VK200-20/4B MRF148 "RF MOSFET" UNELCO UNELCO MICA CAPACITORS VK200 20/4B vk200 choke VK200 FERRITE rf mosfet power amplifier
Text: MOTOROLA Order this document by MRF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF148 N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
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MRF148/D
MRF148
MRF148/D*
VK200-20
VK200-20/4B
MRF148
"RF MOSFET"
UNELCO
UNELCO MICA CAPACITORS
VK200 20/4B
vk200 choke
VK200 FERRITE
rf mosfet power amplifier
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2N6439
Abstract: UT25 coaxial VK200 ferrite choke
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
Collector-B400
2N6439
UT25 coaxial
VK200 ferrite choke
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MRF148A
Abstract: 2204B J101 VK200 Nippon capacitors
Text: MOTOROLA Order this document by MRF148A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF148A N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
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MRF148A/D
MRF148A
MRF148A
2204B
J101
VK200
Nippon capacitors
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2N6439
Abstract: vk200* FERROXCUBE
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N6439 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for w ideband large-signal output am plifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
2N6439
vk200* FERROXCUBE
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MRF138
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF138/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF138 N–Channel Enhancement–Mode . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
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MRF138/D
MRF138
MRF138/D*
MRF138
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Nippon capacitors
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M RF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistor MRF148 N-Channel Enhancement-Mode D esigned for pow er am plifier applications in industrial, com m ercial and amateur radio equipm ent to 175 MHz.
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RF148/D
MRF148
MRF148/D
Nippon capacitors
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MOTOROLA circuit for mrf150
Abstract: motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
MOTOROLA circuit for mrf150
motorola MRF150
mrf150 equivalent
arco capacitors
choke vk200
vk200 choke
MRF150
"RF MOSFET"
VK200-4B
2204B
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vk200
Abstract: MRF148A D913 nippon ferrite ZENER A23 UNELCO MICA CAPACITORS vk200 choke VK200 FERRITE zener motorola 2204B
Text: MOTOROLA Order this document by MRF148A/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF148A N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD
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MRF148A/D
MRF148A
vk200
MRF148A
D913
nippon ferrite
ZENER A23
UNELCO MICA CAPACITORS
vk200 choke
VK200 FERRITE
zener motorola
2204B
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ferroxcube 56-590-65
Abstract: UT25 coaxial 2N6439 UT25 VK200
Text: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
ferroxcube 56-590-65
UT25 coaxial
2N6439
UT25
VK200
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF151/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151/D
MRF151
MRF151/D*
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141/D
MRF141
MRF141/D*
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MRF140 equivalent
Abstract: arco capacitors 262
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics
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MRF140
MRF140 equivalent
arco capacitors 262
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transistors equivalent
Abstract: arco capacitors 262
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for linear large-signal output stages up to 150 MHz frequency range. 150 W, to ISO MHz N-CHANNEL MOS LINEAR RF POWER
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MRF140
transistors equivalent
arco capacitors 262
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