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    VK200 INDUCTOR Search Results

    VK200 INDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN55NJ0HD Murata Manufacturing Co Ltd Fixed IND 55nH 1500mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR56J0HD Murata Manufacturing Co Ltd Fixed IND 560nH 450mA POWRTRN Visit Murata Manufacturing Co Ltd
    DFE322520F-2R2M=P2 Murata Manufacturing Co Ltd Fixed IND 2.2uH 4400mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN4N9D0HD Murata Manufacturing Co Ltd Fixed IND 4.9nH 2600mA POWRTRN Visit Murata Manufacturing Co Ltd

    VK200 INDUCTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: <£e.mi-dond\jLcko\ Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor MRF148 N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and


    Original     		MRF148 30WPEP) -60dB 211-0istortion d9-13) MIL-STD-1311 2204B, VK200 20/4B PDF

    VK200 INDUCTOR

    Abstract: MRF164 gogo board MRF164W inductor vk200 vk200
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F164W The RF TMOS Line P o w er Field E ffe c t Transistor Motorola Preferred Devices N-Channel Enhancement Mode Designed primarily for wideband large-signal output and driver stages to 500 MHz. • Guaranteed Performance at 400 MHz, 28 Vdc


    OCR Scan     		F164W MRF164W VK200 INDUCTOR MRF164 gogo board inductor vk200 vk200 PDF

    j130 fet

    Abstract: MRF27SG
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND


    OCR Scan     		MRF275G MRF275G j130 fet MRF27SG PDF

    5251f

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single


    Original     		MRF275L/D MRF275L 5251f PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		MRF175LU/D MRF175LU MRF175LV 10orola MRF175LU MRF175LU/D* PDF

    inductor vk200

    Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* inductor vk200 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor PDF

    L9181

    Abstract: l6262 Nippon capacitors L 0946
    Text: MOTOROLA O rder this docum ent by M RF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 1 0 0 - 5 0 0 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc


    OCR Scan     		RF275G/D L9181 l6262 Nippon capacitors L 0946 PDF

    RG316-25

    Abstract: 25 ohm semirigid diode t25 4 L5 850 ohm potentiometer RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz vk200 ferrite bead 220 k ohm potentiometer VK200 INDUCTOR vk200.10 diode gp 434
    Text: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		SD2932 SD2932 RG316-25 25 ohm semirigid diode t25 4 L5 850 ohm potentiometer RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz vk200 ferrite bead 220 k ohm potentiometer VK200 INDUCTOR vk200.10 diode gp 434 PDF

    J115 mosfet

    Abstract: MRF175LU
    Text: MOTOROLA SEM ICO NDU CTO R TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect T ransistors MRF175LU M RF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    OCR Scan     		MRF175LU MRF175LV 28cal MRF175L MRF175LU MRF175LV J115 mosfet PDF

    RG316-25

    Abstract: diode Zener t25 4 c8 T20 88 DIODE neosid diode t25 4 L5 MF variable CAPACITOR 50v Fair-Rite ATC 200B diode t25 4 c6 SD2932
    Text: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz M244 epoxy sealed DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		SD2932 SD2932 RG316-25 diode Zener t25 4 c8 T20 88 DIODE neosid diode t25 4 L5 MF variable CAPACITOR 50v Fair-Rite ATC 200B diode t25 4 c6 PDF

    uhf tv power transistor 250w

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF176GV MRF176GU The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode 200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push


    OCR Scan     		MRF176GV MRF176GU MRF176GV MRF176G MRF176 MRF176GU uhf tv power transistor 250w PDF

    inductor vk200

    Abstract: 10A ferrite bead 25 ohm semirigid ZENER MARKING C8 ST vk200 ferrite bead ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms VK200 FERRITE diode L2.70 MARKING code mf stmicroelectronics
    Text: SD2932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metallized N-channel MOS


    Original     		SD2932 SD2932 inductor vk200 10A ferrite bead 25 ohm semirigid ZENER MARKING C8 ST vk200 ferrite bead ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms VK200 FERRITE diode L2.70 MARKING code mf stmicroelectronics PDF

    VK200 INDUCTOR

    Abstract: Nippon capacitors
    Text: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    Original     		MRF175GU/D MRF175GV MRF175GU MRF175GU MRF175GV MRF175GU/D VK200 INDUCTOR Nippon capacitors PDF

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram PDF

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


    OCR Scan     		1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt PDF

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3 PDF