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    VN2410M Price and Stock

    Rochester Electronics LLC VN2410M

    MOSFET N-CH
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    DigiKey VN2410M Bulk 683
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    Vishay Siliconix VN2410M

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    Bristol Electronics VN2410M 78 2
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    Quest Components VN2410M 62
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    Rochester Electronics VN2410M 39,852 1
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    Vishay Siliconix VN2410MTR1

    Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA
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    ComSIT USA VN2410MTR1 6,000
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    VN2410M Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VN2410M Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN2410M Unknown FET Data Book Scan PDF
    VN2410M Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN2410M Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN2410M Topaz Semiconductor 240 V, 10 ?, N-channel enhancement-mode D-MOS FET Scan PDF
    VN2410M Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    VN2410M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V


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    PDF TN2410L, VN2406/2410 TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M

    Untitled

    Abstract: No abstract text available
    Text: VN2410M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)240 V(BR)GSS (V)30 I(D) Max. (A)200m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


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    PDF VN2410M

    VN2410M

    Abstract: VN2406D VN2406L VN2406M VN2410L TN2410L VN2410* mosfet tn2410 siliconix to-18
    Text: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V


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    PDF TN2410L, VN2406/2410 TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M VN2406D VN2410M VN2406M VN2410L TN2410L VN2410* mosfet tn2410 siliconix to-18

    VN2410M

    Abstract: TN2410L VN2406D VN2406L VN2406M VN2410L vn2406
    Text: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOS Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M rDS on Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 VN2406L 6 @ VGS = 10 V 0.8 to 2


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    PDF TN2410L, VN2406/2410 TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M VN2406D VN2410M TN2410L VN2406M VN2410L vn2406

    TN2410L

    Abstract: VN2406D VN2406L VN2406M VN2410L VN2410M
    Text: TN2410L, VN2406/2410 Series Siliconix NĆChannel EnhancementĆMode MOS Transistors TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M Product Summary Part Number rDS on Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V


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    PDF TN2410L, VN2406/2410 TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


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    PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    VN2410M

    Abstract: VN2410L
    Text: VN2410 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (Í1) (A) PACKAGE VN2410L 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 •d 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237


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    PDF VN2410 O-226AA) VN2410L VN2410M O-237 O-237 VNDB24 VN2410L VN2410M

    Untitled

    Abstract: No abstract text available
    Text: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L YN2406D VN2410L VN2406L VN2410M VN2406M Product Summary P a rt N um ber r DS on M a x (Q ) V c s « h )(V ) I d (A ) TN2410L 10 @ V cs = 4.5V 0.5 to 1.8 0.18 VN2406D 6 @ VGs = 10 V


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    PDF TN2410L, VN2406/2410 TN2410L YN2406D VN2410L VN2406L VN2410M VN2406M VN2406D

    VN2410M

    Abstract: VN2410L VN2410
    Text: ^Sifconix S S 2 ‘ ~ ìn Gt VN2410 SERIES N-Channel Enhancem ent-M ode MOS Transistors PRODUCT SUMMARY TO-92 PART NUMBER V 8R DSS rDS(ON) (Í1) (V) BOTTOM VIEW <D (A) PACKAGE VN241QL 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDB24 (See Section 7)


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    PDF VN2410 VN2410L VN2410M O-237 VNDB24

    Untitled

    Abstract: No abstract text available
    Text: T em ic TN2410L, VN2406/2410 Series Semiconductors N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number n S on) M a x (Q ) V GS(th) (V) Id (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D


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    PDF TN2410L, VN2406/2410 TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M VN2406D

    VN2410M

    Abstract: 3XXC
    Text: TELEDYNE COMPONENTS EäE fiW b G H D 000^47^ 3 m T-29-25 VN2410 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS FET ORDERING INFORMATION VN2410CHP Sorted Chips in Waffle Pack TO-226AA TO-92 Plastic Package VN2410L TO-237 Plastic Package VN2410M 240V, 10 ohm


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    PDF T-29-25 VN2410 O-226AA O-237 VN2410CHP VN2410L VN2410M VN2410U 3XXC

    VN2410M

    Abstract: No abstract text available
    Text: Tem ic suiconix TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOS Transistors TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M Product Summary Part Num ber VGS th (V) I d (A) 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ V GS = 10V 0.8 to 2 1.12 VN2406L


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    PDF TN2410L, VN2406/2410 TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M VN2410M

    VQ1006J

    Abstract: siliconix VN10KM VN10KM VQ1006 VQ1004 VQ1004J VQ1004P VQ1006P A1318 T
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 •d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VN2406M VN2410M


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VQ1006J siliconix VN10KM VN10KM VQ1006 VQ1004 VQ1004J VQ1004P VQ1006P A1318 T

    VQ1000P

    Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VQ1000P VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J

    1RF820

    Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
    Text: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220


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    PDF O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 1RF820 VN64GA VN2410M IRF340 IRF350 IRF740

    buz 350 equivalent

    Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
    Text: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25


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    PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 buz 350 equivalent VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM

    VN0300M

    Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN0300M siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J

    1RF820

    Abstract: 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF440 IRF450 IRF820
    Text: Ü Ü A C D ^ U /C D M i v i a iv i v ^ i v T T k iv r i i i i i v D r/\W i t i v u v i w C A lA A ^ /\ r i f^ .n \ M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I B V qss Volts 4 5 0 -5 0 0 TO-3 TO-220


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    PDF to-220 to-39 to-237 to-92 to-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* 1RF820 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF820

    VN2410L equivalent

    Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I


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    PDF ivn6100tnu to-39 ivn6200cnd to-220 vn0401d ivn6200cne t0-220 irf533 ivn6200cnf VN2410L equivalent VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450

    2N6658

    Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m 2N6658 VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD

    hh 004 TO92

    Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m hh 004 TO92 VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L

    IRF 850

    Abstract: IRf 92 0151 623 13a 8Q DIODE irf640 IRF340 IRF350 IRF440 IRF450 IRF740
    Text: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi i v i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220


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    PDF O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 IRF 850 IRf 92 0151 623 13a 8Q DIODE irf640 IRF340 IRF350 IRF740

    siliconix VN10KM

    Abstract: VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VN2406M


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m siliconix VN10KM VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE