MGE pulsar cl5
Abstract: MGE pulsar MGE UPS MGE ups systems pulsar cl5 34007303XT-AE pulsar cl conector 250v proteggere una linea telefonica
Text: Caractéristique / Pulsar CL5 Characteristics Performances Protection surtensions / Surge protection 3 MOV 18 000 A Dissipation Totale d’Energie / Total Energy Dissipation E 555 J Temps de réponse / Response time t < 1 ns Caractéristique / Pulsar CL5 Tel
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Legrand
Abstract: Legrand switch twilight-switch INTERRUPTEUR scheme
Text: • Dämmerungsschalter • Interrupteur crépusculaire • Twilight-switch • Schemerings-schakelaar • Interruttore crepuscolare • Interruptor crepuscular • Skumringsrelae • Hämäräkytkimen • Demringsbryter • Skymningsrelä • Interruptor crepuscular
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Untitled
Abstract: No abstract text available
Text: CombiLyz Conducibilità – ovviamente migliore. Panoramica sul prodotto CombiLyz ® Caratteristiche Settori Limiti di temperatura Attacchi al processo Materiali parti a contatto con il processo Range di misura disponibili Accuracy Conducibilità e concentrazione
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CH-8501
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Untitled
Abstract: No abstract text available
Text: PROIETTORE MULTIMEDIALE MODELLO XG-MB67X-L GUIDA DI IMPOSTAZIONE Assegnazioni dei pin di collegamento . 2 RS-232C Caratteristiche tecniche e impostazioni del comando . 3 Impostazione dell’ambiente di rete del proiettore . 7
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XG-MB67X-L
RS-232C
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Untitled
Abstract: No abstract text available
Text: PROIETTORE DI DATI MODELLO PG-F320W GUIDA DI IMPOSTAZIONE Corrispondenza dei pin di collegamento . 2 Specifiche RS-232C e impostazioni dei comandi . 4 Impostazione dell’ambiente di rete del proiettore. 9
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PG-F320W
RS-232C
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Untitled
Abstract: No abstract text available
Text: PROIETTORE DI DATI MODELLO XG-F315X GUIDA DI IMPOSTAZIONE Corrispondenza dei pin di collegamento . 2 Specifiche RS-232C e impostazioni dei comandi . 4 Impostazione dell’ambiente di rete del proiettore. 9
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XG-F315X
RS-232C
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Untitled
Abstract: No abstract text available
Text: La soluzione per i solenoidi con alta corrente Avete un’applicazione on/off con elettrovalvole ? Anche se sono alimentate con una corrente oltre 0.5A, relè o schede di potenza per PLC non sono più necessari. Il connettore serie CA5 permette di controllare carichi di potenza fino a 3A e oltre,
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1223it
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Untitled
Abstract: No abstract text available
Text: La soluzione per i solenoidi con alta corrente Avete un’applicazione on/off con elettrovalvole ? Anche se sono alimentate con una corrente oltre 0.5A, relè o schede di potenza per PLC non sono più necessari. Il connettore serie CA5 permette di controllare carichi di potenza fino a 3A e oltre,
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1223it
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Untitled
Abstract: No abstract text available
Text: U500 Il nuovo standard dei sensori ad ultrasuoni Flessibilità come ragione di successo Un design – due tecnologie Si allarga la famiglia dei prodotti NextGen: Baumer lancia infatti l’U500, la versione ad ultrasuoni paritetica per dimensioni e funzionalità della versione
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com/U500
CH-8501
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c 879 transistor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification RowerMOS transistor Logic level FET GENERAL DESCRIPTION BUK565-100A QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.
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BUK565-
BUK565-100A
c 879 transistor
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BUK445-600B
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK445-600B
PINNING-SOT186
BUK445-600B
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6JV6
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-chartnel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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BUK482-100A
OT223
6JV6
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK556-60A
T0220AB
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BUK437-500A
Abstract: BUK437-500B buk437 S1216
Text: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK437-500A
BUK437-500B
BUK437
-500A
-500B
M89-1142/RST
BUK437-500A
BUK437-500B
S1216
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BUK445
Abstract: BUK445-60A BUK445-60B IT48
Text: PHILIPS INTER NAT IONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK445-60A/B
-SOT186
DS/V-12/
ID/100
BUK445
BUK445-60A
BUK445-60B
IT48
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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BUK465-60H
SQT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK566-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount
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BUK566-60H
BUK566-60H
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BUK416-1OOAE
Abstract: BUK416-100BE BUK416-100AE transistor 136 138 140
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK416-100AE/BE
BUK416
-100AE
-100BE
OT227B
BUK416-1OOAE/BE
BUK416-1OOAE
BUK416-100BE
BUK416-100AE
transistor 136 138 140
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BUK436-1000B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
BUK436-1000B
BUK436-1000B
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BUK556-60H
Abstract: T0220AB
Text: N AMER P H I L I P S / D I S C R E T E b'îE » t.bS3T31 OOBDflSS 447 M A P X Preliminary Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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bbS3R31
BUK556-60H
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK454-800A/B
BUK454
-800A
-800B
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK554-200A/B
BUK554
-200A
-200B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a
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BUK564-200A
BUK564-200A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PINNING - SOT4Q4 SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Junction temperature Drain-source on-state resistance
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BUK7618-30
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