Untitled
Abstract: No abstract text available
Text: 1N2927 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A .10m Peak Curr. Tol.01m Total Cap. (F)80p Ip/Iv Min2.5 Vp75m Vv475m Fwd Volt @Ipeak600m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)10 Neg Resist. Semiconductor MaterialSilicon
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1N2927
Vp75m
Vv475m
Ipeak600m
StyleTO-18
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TD436
Abstract: No abstract text available
Text: TD436 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 3.7m Peak Curr. Tol. Total Cap. (F).38p Ip/Iv Min8.0 Vp75m Vv390m Fwd Volt @Ipeak570m Resist. Cutoff Freq30G Series Induct. (H) R(series) (Ohms)5.0 Neg Resist.40 Semiconductor MaterialGermanium
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TD436
Vp75m
Vv390m
Ipeak570m
Freq30G
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Untitled
Abstract: No abstract text available
Text: 1N3858 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol.50m Total Cap. (F)8.0p Ip/Iv Min8.0 Vp75m Vv350m Fwd Volt @Ipeak545m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)2.5 Neg Resist. Semiconductor MaterialGermanium
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1N3858
Vp75m
Vv350m
Ipeak545m
StyleDO-25var
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Untitled
Abstract: No abstract text available
Text: 1N3853 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol.50m Total Cap. (F)15p Ip/Iv Min8.0 Vp75m Vv350m Fwd Volt @Ipeak545m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)2.5 Neg Resist. Semiconductor MaterialGermanium
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Original
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PDF
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1N3853
Vp75m
Vv350m
Ipeak545m
StyleDO-25var
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