BG3230
Abstract: BG3230R VPS05604
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
|
Original
|
PDF
|
BG3230
BG3230R
VPS05604
BG3230
EHA07215
OT363
Feb-27-2004
BG3230R
VPS05604
|
BCR08PN
Abstract: VPS05604
Text: BCR08PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated NPN/PNP Transistors in one package Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation
|
Original
|
PDF
|
BCR08PN
VPS05604
OT-363
EHA07193
EHA07176
OT363
Jul-12-2001
BCR08PN
VPS05604
|
EHA07182
Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Text: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s
|
Original
|
PDF
|
VPS05604
EHA07182
OT-363
Tstg10
Oct-07-1999
EHB00068
EHB00065
EHA07182
BAV70S
VPS05604
6C12
5a2 DIODE
C2A26
marking 5a2
|
BAT62-08S
Abstract: VPS05604
Text: BAT62-08S Silicon Schottky Diode Array Preliminary data 4 Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604
|
Original
|
PDF
|
BAT62-08S
OT-363
VPS05604
EHA07193
EHA07291
OT363
EHD07061
900MHz
EHD07063
BAT62-08S
VPS05604
|
BAS40-07W
Abstract: No abstract text available
Text: BAS40-07W 3 Silicon Schottky Diode 4 General-purpose diode for high-speed switching Circuit protection Voltage clamping 2 High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -
|
Original
|
PDF
|
BAS40-07W
VPS05605
EHA07008
OT343
EHB00039
Aug-23-2001
EHB00038
BAS40-07W
|
BC847PN SOT363
Abstract: VPS05604 BC847PN Marking 1ps sot
Text: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation
|
Original
|
PDF
|
BC847PN
VPS05604
OT-363
EHA07193
EHA07177
OT363
EHP00365
EHP00364
EHP00368
BC847PN SOT363
VPS05604
BC847PN
Marking 1ps sot
|
BCR129S
Abstract: VPS05604
Text: BCR129S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=10k) 2 3 1 C1 B2 E2 6 5 4 VPS05604
|
Original
|
PDF
|
BCR129S
VPS05604
EHA07265
OT363
Aug-29-2001
BCR129S
VPS05604
|
BCR169S
Abstract: VPS05604 marking WSs
Text: BCR169S PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=4.7k) 2 3 1 VPS05604 C1 B2 E2
|
Original
|
PDF
|
BCR169S
VPS05604
EHA07266
OT363
Jul-12-2001
BCR169S
VPS05604
marking WSs
|
marking code g1s
Abstract: Q62702-F1774 SOT 343 MARKING BF
Text: BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data 3 • For low noise, high gain controlled 4 input stages up to 1GHz • Operating voltage 5V 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
|
Original
|
PDF
|
VPS05605
Q62702-F1774
OT-343
Jun-05-1998
marking code g1s
Q62702-F1774
SOT 343 MARKING BF
|
BAT68-07W
Abstract: No abstract text available
Text: BAT68-07W Silicon Schottky Diodes 3 For mixer applications in the VHF / UHF range 4 For high-speed switching applications 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT68-07W 87s
|
Original
|
PDF
|
BAT68-07W
VPS05605
EHA07008
OT343
EHD07103
EHD07104
Aug-08-2001
BAT68-07W
|
Silicon N Channel MOSFET Tetrode
Abstract: Q62702-F1772 marking code g1s BF 2000W
Text: BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor 4 with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code BF 2000W NDs Q62702-F1772 VPS05605 Pin Configuration
|
Original
|
PDF
|
Q62702-F1772
VPS05605
OT-343
Silicon N Channel MOSFET Tetrode
Q62702-F1772
marking code g1s
BF 2000W
|
BCR198S
Abstract: VPS05604
Text: BCR198S PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=47k, R2=47k) 2 3 1 VPS05604
|
Original
|
PDF
|
BCR198S
VPS05604
EHA07173
OT363
Jul-12-2001
BCR198S
VPS05604
|
Untitled
Abstract: No abstract text available
Text: BAT 64-07W Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, 4 bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
PDF
|
4-07W
VPS05605
EHA07008
OT-343
50/60Hz,
EHB00059
Oct-07-1999
|
marking 81W
Abstract: No abstract text available
Text: BAR 81W Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 Type Marking BAR 81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT-343 Maximum Ratings Parameter Symbol
|
Original
|
PDF
|
VPS05605
OT-343
Oct-05-1999
100MHz
marking 81W
|
|
|
6A1 diode
Abstract: BAS70-06S VPS05604
Text: BAS70-06S Silicon Schottky Diode Array 4 General-purpose diode for high-speed switching 5 6 Circuit protection Voltage clamping High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S
|
Original
|
PDF
|
BAS70-06S
VPS05604
EHA07288
OT363
EHB00042
EHB00043
EHB00044
EHB00045
Jul-06-2001
6A1 diode
BAS70-06S
VPS05604
|
ZL 58
Abstract: No abstract text available
Text: BFP 183W NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
|
Original
|
PDF
|
VPS05605
OT-343
Oct-12-1999
ZL 58
|
Untitled
Abstract: No abstract text available
Text: BFP 136W NPN Silicon RF Transistor 3 For power amplifier in DECT and PCN systems 4 fT = 5.5GHz Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 136W PAs Pin Configuration
|
Original
|
PDF
|
VPS05605
OT-343
900MHz
Oct-12-1999
|
Untitled
Abstract: No abstract text available
Text: BF 2030W Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
PDF
|
VPS05605
EHA07461
OT-343
Feb-08-2001
|
BFP620
Abstract: BFP620 acs BFP620 applications note GFT45
Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications 2 Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605
|
Original
|
PDF
|
BFP620
VPS05605
OT343
Apr-07-2003
BFP620
BFP620 acs
BFP620 applications note
GFT45
|
IC 7481 pin configuration
Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metallization for high reliability
|
Original
|
PDF
|
BFP520
VPS05605
OT343
50Ohm
45GHz
-j100
Sep-26-2001
IC 7481 pin configuration
IC 7481
ev 2816
01177
ic rom 2816
BFP520
BFP520 application notes
k 3683 transistor
|
BFS483
Abstract: G1410 VPS05604
Text: BFS483 NPN Silicon RF Transistor 4 For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2
|
Original
|
PDF
|
BFS483
VPS05604
EHA07196
OT363
Jun-27-2001
BFS483
G1410
VPS05604
|
wgs-1
Abstract: BCR116S VPS05604
Text: BCR116S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=4.7k, R 2=47k) 2 3 1 VPS05604
|
Original
|
PDF
|
BCR116S
VPS05604
EHA07174
OT363
Dec-12-2001
wgs-1
BCR116S
VPS05604
|
BF2030W
Abstract: No abstract text available
Text: BF2030W Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
PDF
|
BF2030W
VPS05605
EHA07461
OT343
Oct-05-2001
BF2030W
|
MARKING 74s
Abstract: PF 7004S
Text: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
PDF
|
70-04S
VPS05604
70-04S
Q62702-A3468
OT-363
MARKING 74s
PF 7004S
|