vs 1838 b
Abstract: No abstract text available
Text: Application Note 1838 Authors: Kiran Bernard, Eric Thomson, Lawrence Pearce, Nick Vanvonno Single Event Effects Testing of the ISL70444SEH, Quad 40V Radiation Hard Precision Operational Amplifiers Introduction SEE Results Objective There are many phenomena that occur past Earth's
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ISL70444SEH,
AN1838
ISL70444SEHEVAL1Z
vs 1838 b
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1852A
Abstract: ADF4118
Text: Frequency Synthesizer 50Ω KSN-1852A-119+ 1768 to 1852 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-1852A-119+ is a Frequency Synthesizer, designed to operate from 1768 to 1852
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KSN-1852A-119+
DK1042
1852A
ADF4118
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ADF4153
Abstract: KJ1367 TB-552 9434 8 pin integrated circuit
Text: Frequency Synthesizer 50Ω SSN-1932A-119+ 1832 to 1932 MHz The Big Deal • Low phase noise and spurious • Very small size 0.60" x 0.60" x 0.138" CASE STYLE: KJ1367 Product Overview The SSN-1932A-119+ is a Frequency Synthesizer, designed to operate from 1832 to 1932
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SSN-1932A-119+
KJ1367
ADF4153
KJ1367
TB-552
9434 8 pin integrated circuit
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n 9013
Abstract: ADF4153 KJ1367 TB-552 9434 8 pin integrated circuit
Text: Frequency Synthesizer 50Ω SSN-1932A-119+ 1832 to 1932 MHz The Big Deal • Fractional N synthesizer • Low phase noise and spurious • Very small size 0.60" x 0.60" x 0.138" CASE STYLE: KJ1367 Product Overview The SSN-1932A-119+ is a Frequency Synthesizer, designed to operate from 1832 to 1932
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SSN-1932A-119+
KJ1367
n 9013
ADF4153
KJ1367
TB-552
9434 8 pin integrated circuit
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2160 transistor
Abstract: TK11893 1512 regulator
Text: POWER&RF Bipolar white LED flash driver IC バイポーラ白色LEDフラッシュドライバIC TK11893AM8 HSON3030B-10 DESCRIPTION The TK11893AM8 type is a step-up DC-DC converter designed for camera lights of mobile phones and portable equipment, using constant frequency PWM architecture, with
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TK11893AM8
HSON3030B-10)
TK11893AM8
DE2812C
500mA)
2160 transistor
TK11893
1512 regulator
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Untitled
Abstract: No abstract text available
Text: PD - 95683 HFA16PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA16PB120PbF
260nC
HFA16PB120
O-247AC
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HFA16PB120
Abstract: IRFP250 HFA16PB120PBF transistor IRFP250
Text: PD - 95683A HFA16PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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5683A
HFA16PB120PbF
260nC
HFA16PB120
O-247AC
IRFP250
HFA16PB120PBF
transistor IRFP250
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Untitled
Abstract: No abstract text available
Text: 200 -1200 MHz Standard Hybrid Amplifier Frequency range Gain vs. temperature W ide bandw idth dB +0.8/-1.4 dB Max Gain flatness 1.0 1.5 dB M ax p-p Reverse isolation 23 22 dB Min Input 2.0:1 2.0:1 Max Output 1.5:1 1.5:1 Max +8 + 7 dBm Min 3rd O rd e r +21
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H91-0254
744T331
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Untitled
Abstract: No abstract text available
Text: ^"\DU QO/I Drl"0<il4 10-2000 MHz Standard Hybrid Amplifier . 1 0-2000 M Hz bandwidth Parameters | j Specification limit Temperature +25 Frequency range 10 - 2000 Small signal gain • High reverse isolation j • j j Low profile TO-8 package MHz 15.3 ± 0 . 5
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H91-0324
00DGSb4
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Untitled
Abstract: No abstract text available
Text: 5 - 1 0 0 MHz Standard Hybrid Amplifier Specification limit Parameters 5- 10 0 M H z bandwidth Temperature Very low noise figure Small signal gain +25 Frequency range Units °c -55 to +85 MHz 5 -1 0 0 16.5 ± 0.5 Gain vs. temperature High reverse isolation
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QBH-217
H91-02
744T331
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Untitled
Abstract: No abstract text available
Text: 10-400 MHz Standard Hybrid Amplifier . Parameters 10-400 M H z Temperature bandwidth Frequency range O B L I Q yin D i I“ 0 ^ t U Specification limit + 25 Small signal gain • Unconditionally stable MHz 12.5 ± 0.5 dB +0.5/-0.5 dB Max Gain flatness 1.0
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H91-0340
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Untitled
Abstract: No abstract text available
Text: /N n n 10 - 150 MHz Standard Hybrid Amplifier Parameters 1 0 -1 5 0 M H z bandwidth + 25 dB dB Max 0.5 dB Max p-p 31 30 dB Min 1.5:1 1.5:1 Max 1.5:1 1.5:1 Max + 19 + 16 dBm Min 3rd O rd e r + 34 +32 dBm Min 2nd O rd e r +47 +42 dBm Min Noise figure 5.B 6.5
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H91-0145
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Untitled
Abstract: No abstract text available
Text: 5 - 150 MHZ Standard Hybrid Amplifier Specification lim it Param eters 5 - 1 5 0 M H z bandwidth • Tem perature + 0.5/-0.7 dB Max Gain flatness 0.5 0.6 dB Max p-p Reverse isolation 50 50 dB Min Input 1.6:1 2.1:1 Max O utput 1.6:1 2.1:1 Max + 19 + 18 dBm Min
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H91-0230
744T331
00LI0545
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Untitled
Abstract: No abstract text available
Text: ^ " \Q M 1 0 - 4 5 0 MHz Standard Hybrid Amplifier Parameters . 1 0 -4 5 0 M H z bandwidth Specification limit Temperature +25 Frequency range dB + 1.2/-1.0 dB M ax 1.4 dB M ax p-p Gain flatness 0.8 Reverse isolation 25 dB Min Input 1.5:1 Max Output 1.5:1
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H91-020&
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Untitled
Abstract: No abstract text available
Text: I rtQZ D tl'^ O O 10 - 200 MHz Standard Hybrid Amplifier . Parameters 1 0 -2 0 0 M H z bandwidth r \m Specification limit +25 Temperature Frequency range Units -55 to +85 °c 10- 200 MHz 20.0 ± 0.5 Small signal gain dB +0.5/-1.0 dB Max • Low noise figure
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vs 1838 b
Abstract: No abstract text available
Text: 5 - 300 MHz Standard Hybrid Amplifier Parameters • 5 -300 M H z bandwidth QBH-223 Specification limit +25 Temperature MHz 11.5 ± 0.5 Small signal gain dB Gain vs. temperature • Guaranteed specifications over temperature • °c 5 -3 0 0 Frequency range
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QBH-223
H91-0223
vs 1838 b
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Untitled
Abstract: No abstract text available
Text: 5 - 300 M H z Sta n d a rd Hybrid Am plifier Parameters 5-300 M H z bandwidth / ^ Q U i n Q '» D r l " I U O Specification limit Temperature +25 -55 to + 8 5 Frequency range T0-8 package 5 -3 0 0 Small signal gain MHz 11.3 ± 0.5 dB Gain vs. temperature Unconditionally stable
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H91-010&
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Untitled
Abstract: No abstract text available
Text: 1 - 1 2 0 0 MHz Standard Hybrid Amplifier Specification limit Parameters 1 12 0 0 M H z bandw idth - / “N Q I I Q A n D r l" O O U +25 Temperature Units + 0 to +65 °c 1-1200 Frequency range M Hz 15.0 ± 1.5 Small signal gain dB Gain vs. temperature Low noise figure
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H91-0
VSWR25Â
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Untitled
Abstract: No abstract text available
Text: pknu 1 0 7 'ö iD rl" I U / 5-550 MHz Standard Hybrid Amplifier Parameters 5 -5 5 0 M H z bandwidth Specification limit Tem perature +25 Frequency range Broadband low power unit 5 -5 5 0 Small signal gain MHz dB 14.8 ± 0 .5 Gain vs. temperature Low noise figure, less
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744T331
000045b
H31-0107
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Untitled
Abstract: No abstract text available
Text: 10-140 MHz Standard Hybrid Amplifier Parameters . no-140 M H z bandwidth MHz 15.3 ± 0 . 5 Small signal gain Gain vs. temperature dB +0.5/-0.7 dB Max Gain flatness 0.3 0.6 dB M ax p-p Reverse isolation 34 34 dB Min 1.5 : 1 1.5 : 1 1.5 : 1 1.5 : 1 Max V SW R
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no-140
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"Q-bit Corporation"
Abstract: No abstract text available
Text: /^ D U 1 0 -5 0 0 MHz Sta n d a rd Hybrid Am plifier Parameters 10-500 M H z bandwidth Specification limit Temperature +25 °c lO - 500 Small signal gain MHz l l .0 ± 0.5 dB Gain vs. temperature +0.6/-1.0 dB M ax 0.8 1.0 dB M ax p-p 13 12 dB Min Input 1.6:1
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H91-0335
"Q-bit Corporation"
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Untitled
Abstract: No abstract text available
Text: O D L I C Q l 7 ^w D r1 “0 0 I / 10 - 1 5 0 0 MHz S tan d ard H ybrid A m plifier Temperature bandwidth +25 °c -55 to + 85 Frequency range 10- 1500 Small signal gain MHz 13.5 ± 0.5 dB Gain vs. temperature • High 3rd order intercept point Un/ts Specification limit
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H91-5817
744c1331
0000b20
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1838T
Abstract: 1838 T TRANSISTOR C483 IRGPH50MD2
Text: PD - 9.1047A International iôr]Rectifier IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V Ces 1Short circuit rated -10[js @125°C, VGE= 15V 1Switching-loss rating includes all "tail" losses
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10kHz)
IRGPH50MD2
C-487
O-247AC
C-488
1838T
1838 T
TRANSISTOR C483
IRGPH50MD2
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transistor c295
Abstract: No abstract text available
Text: International H !Rectifier P D - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT V ces = 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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10kHz)
IRGPH50FD2
-247AC
C-299
O-247AC
C\300
transistor c295
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