VTE3372LA Search Results

VTE3372LA Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VTE3372LA		PerkinElmer Optoelectronics	GaAlAs Infrared Emitting Diode		Original	PDF
VTE3372LA		EG&G	HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm		Scan	PDF
VTE3372LA		EG&G Vactec	GaAlAs Infrared Emitting Diodes		Scan	PDF
VTE3372LA		PerkinElmer Optoelectronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - IR EMITTERS		Scan	PDF

VTE3372LA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GaAlAs Infrared Emitting Diodes VTE3372LA, 74LA Long T-1 3 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" DESCRIPTION This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small	Original	PDF	VTE3372LA, VTE3372LA VTE3374LA
VTE3372LAH Abstract: No abstract text available Text: GaAlAs Infrared Emitting Diodes VTE3372LAH, 74LAH Long T-1 3 mm Plastic Package — 880 n PACKAGE DIMENSIONS inch (mm) CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" DESCRIPTION This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small	Original	PDF	VTE3372LAH, 74LAH VTE3372LAH VTE3374LAH VTE3372LAH
VTE3372LA Abstract: VTE3374LA Text: GaAlAs Infrared Emitting Diodes VTE3372LA, 74LA Long T-1 3 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" DESCRIPTION This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small	Original	PDF	VTE3372LA, VTE3372LA VTE3374LA VTE3372LA VTE3374LA
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	PDF	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
VTE1063 Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285 Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters	Original	PDF	VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
VTS3082 Abstract: 476 20k cap VTL5C3 980-2675 VTS3085 VTP1188S 980-0004 photoconductive cells VT935G vactrol Text: PerkinElmer Photoconductive Cells, Emitters, Photo Diodes/Transistors, Optoisolators Photoconductive Cells Silicon Photodiodes Electrical/Optical Characteristics @ 25¡C Photoconductive cells provide a very economical and technically superior solution for many light level	Original	PDF	2850K VTS3082 15K/1 VTS3085 2K/55K VTS3082 476 20k cap VTL5C3 980-2675 VTP1188S 980-0004 photoconductive cells VT935G vactrol
VTP1220FBH Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0	Original	PDF	2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H
VTE1291-2 Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher	Original	PDF	VTE1063 VTE7172 VTE7173 VTE1291-2 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2
DDD1222 Abstract: VTE3372LA VTE3374LA Text: SbE D 303DbDT DDD1222 STS GaAIAs Infrared Emitting Diodes VCT VTE3372LA, 74LA Long T-1 Plastic Package — 880 nm E 6 & 6 VACTEC - T-H» - I 3 h PACKAGE DIMENSIONS inch mm .2 2 .0 6 (5 .6 ) ( 1 .5 ) ( 0 .5 *) ( 0 . 4 -3 ) .0 2 3 .0 1 7 .0 2 6 .0 1 7 .1 2 6	OCR Scan	PDF	DDD1222 VTE3372LA, VTE3372LA VTE3374LA VTE3372LA VTE3374LA
Untitled Abstract: No abstract text available Text: SbE D • BGBGbD^ 00D1222 STS GaAIAs Infrared Emitting Diodes VTE 337 2LA, 74LA Long T-1 Plastic Package — 880 nm E H V C T G & G VACTEC - T-HM3 . PACKAGE DIMENSIONS inch mm .2 2 .0 6 ( 5 .6 ) ( 1 .5 ) ( 0 .5 8 ) „ ( 0 .4 3 ) .0 2 3 .0 1 7 .0 2 6 .0 1 7	OCR Scan	PDF	00D1222 VTE3372LA VTE3374LA
H0A0872-n55 Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1	OCR Scan	PDF	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12