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    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and


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    VTP3310LAH

    Abstract: VTP3310L
    Text: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and


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    PDF VTP3310LAH VTP3310LAH VTP3310L

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


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    PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H