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Excelitas Technologies Corporation VTP8350H SENSOR PHOTODIODE 940NM 2DIP MOD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VTP8350H	Bulk	663		1	1 $1.65 10 $1.65 100 $1.5375 1000 $1.5375 10000 $1.5375	Buy Now
Newark	VTP8350H	Bulk			250	1 - 10 - 100 - 1000 - 10000 -	Buy Now

VTP8350 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VTP8350		PerkinElmer Optoelectronics	VTP Process Photodiode		Original	PDF
VTP8350		EG&G	FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes		Scan	PDF
VTP8350		EG&G Vactec	VTP Process Photodiodes		Scan	PDF
VTP8350		EG&G Vactec	VTP Process Photodiodes		Scan	PDF
VTP8350H		Excelitas Technologies	Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE FAST CERAMIC PKG		Original	PDF
VTP8350S		EG&G	FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes		Scan	PDF
VTP8350S		EG&G Vactec	VTP Process Photodiodes		Scan	PDF

VTP8350 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
VTP8350 Abstract: No abstract text available Text: VTP Process Photodiodes VTP8350 PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low	Original	PDF	VTP8350 VTP8350
Untitled Abstract: No abstract text available Text: VTP Process Photodiodes VTP8350 PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low	Original	PDF	VTP8350
Untitled Abstract: No abstract text available Text: VTP Process Photodiodes VTP8350H PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low	Original	PDF	VTP8350H
VTP8350H Abstract: No abstract text available Text: VTP Process Photodiodes VTP8350H PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low	Original	PDF	VTP8350H VTP8350H
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	PDF	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
VTP8651 Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100 Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).	Original	PDF	VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
VTP1220FBH Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0	Original	PDF	2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H
VTP8350 Abstract: No abstract text available Text: VTP Process Photodiodes VTP8350 P A C K A G E D IM E N S IO N S inch mm P R O D U C T D E S C R IP T IO N CASE 11 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark	OCR Scan	PDF	VTP8350 VTP8350
Untitled Abstract: No abstract text available Text: VTP8350 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 11 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast	OCR Scan	PDF	VTP8350 Cto75Â 3030bCH
H0A0872-n55 Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1	OCR Scan	PDF	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Untitled Abstract: No abstract text available Text: D SbE • B O B O b O ^ D D O l O a O 335 H V C T VTP Process Photodiodes E 6 & G V TP 83 50 , 50S, 51 T-41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 11 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a th ick layer of clea r epoxy.	OCR Scan	PDF	T-41-51 VTP8350
VTPB350S Abstract: VTP8350 VTP8351 10VIV 06SR Text: SbE D 30 30 b [ n 0 0 0 1 0 0 0 335 H V C T VTP Process Photodiodes V T P 8 3 5 0 , 5 0 S , 51 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch <mm PRODUCT DESCRIPTION CASE 11 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.	OCR Scan	PDF	VTP8350, T-41-51 VTP8350 VTPB350S VTP8351 5x1012 VTPB350S VTP8350 VTP8351 10VIV 06SR