Untitled
Abstract: No abstract text available
Text: 3DUW1XPEHU ;=7+,: [PP,1 5$5 '(0,77,1*',2'( www.SunLED.com 35(/,0,1$5<63( & )HDWXUHV z PP[PP607/('PP7+,&.1(66 z /2:32:(5&2168037,21 z :,'(9,(:,1*$1*/( z ,'($/)25%$&./,*+7$1',1',&$725 z 9$5,286&2/256$1'/(167<3(6$9$,/$%/(
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PP607/(
6075HIORZ6ROGHULQJ
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Untitled
Abstract: No abstract text available
Text: 3DUW1XPEHU =7+,: [PP,1 5$5 '(0,77,1*',2'( www.SunLED.com )HDWXUHV z PP[PP607/('PP7+,&.1(66 z /2:32:(5&2168037,21 z :,'(9,(:,1*$1*/( z ,'($/)25%$&./,*+7$1',1',&$725 z 9$5,286&2/256$1'/(167<3(6$9$,/$%/( z3$&.$*( 3&65(/
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PP607/(
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Untitled
Abstract: No abstract text available
Text: REVISIONS DCN R EV DESCRIPTION DATE 27645 03 R ED R AW TO JEDEC FO R M AT 0 3/1 5/95 T. VU 27945 04 ADD 4 4 LD 0 6/2 5/95 T. VU 28697 05 0 3 /0 5 /9 6 T. VU 60363 06 CHANGE S TAN D O FF DIM FOR 4 4 LD ADD 3 6 LD A PP R O VED 0 7/2 0/97 AA - .01 5 / . 0 2 0
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PSC-4033
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MC6504
Abstract: xn203 MC68040-25 led 7 doan MC68LC040 hall effect 44e MC68040RC25 ms8040 USPA AC M68040
Text: ,VU X )4()l I M / A I ) C68040 Rc\ I MC68EC040V MICROPROCESSORS USER'S MANUAL Introduction Integer Unit M e m o ry M anagem ent Unit (Except M C 6 8 E C 0 4 0 & M C 6 8 E C 0 4 V ) Instruction and Data Caches Signal Description IEEE 1149.1 Test Access Port (JTAG)
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X04miM/AI)
MC68EC040V
MC68EC040
MC68EC04V)
MC68040)
MC68040
MC68LC040
MC68EC040
MC68040V
MC68EC040V
MC6504
xn203
MC68040-25
led 7 doan
hall effect 44e
MC68040RC25
ms8040
USPA AC
M68040
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RX 3E
Abstract: RX-3E 8 Radio Corporation of America 252B marking LT 5216 1965-REVISED rca RX- 3E sur 288 SRDL oa 1160
Text: CORPORATION OF A M E R I C A . ELECTRONIC DATA PROCESSING PROCESSORS @ VU incui inumi RADIO REFERENCE MANUAL R A D I O C O R P O R A T I O N 70-35-601 March 1966 OF A M E R I C A The information contained herein is subject to change without notice. Revisions may be
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7 segment display sm 42056
Abstract: 7 Segment sm 42056 7 segment display sm 42056 national instrument kp series stepper motor japan servo co ru 94v0 ltc 126 sm 42056 siemens SID 801 smd marking 271 Sot helipot 7286 r10k l.25 helipot 7286 potentiometer
Text: SI technologies ' CORPORATION THIRD EDI TI ON .Ü a IV! • m ? , ,I • Passive Netw orks f it k R e s i s t o r s?Vu. Chip • ^ fs< _ ' Power L * '• ^ Resistors ^ ~ * «s» -h r ,? 7 , ^ Trim m ers „ i * M r «2 • i rP Di i ¿r1" Me ¡t f r osition
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27645
Abstract: vu 725
Text: ^ - 1 . 0 0 7 | C ACD BCD - AA - 3A ii n n n n n n n n n n n n n n n d & N A A S A i 1 = e ! i i i ! / - INDEX AREA .225 MAX A1 1 I A 1 1 U Lu u u u u u u u u u u u u u 1 2 3 .150 MAX .01 5/.020 t —— /— WITH PLATING 1 REF
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s-027,
PSC-4033
27645
vu 725
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ICS RS 3197
Abstract: No abstract text available
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM54280B MCM5L4280B MCM5V4280B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable T h e M C M 5 4 2 8 0 B is a 0 .6 j C M O S h ig h -s p e e d d y n a m ic ra n d o m a c c e s s m e m o ry .
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MCM54280B
MCM5L4280B
MCM5V4280B
54280BJ70
54280BJ80
54280BJ10
54280BT70
54280BT80
54280BT10
54280BJ70R
ICS RS 3197
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Untitled
Abstract: No abstract text available
Text: 000 PWR-82331 and PWR-82333 ILC DATA DEVICE _ _ CORPORATION_ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PW R-82331 has a 200V rating and uses MOSFETs in the output stage while the
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PWR-82331
PWR-82333
PWR-82333
R-82331
8233X
PWR-82331/333
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT ADVANCE INFORMATION IDT71V428 I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times
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IDT71V428
8/10/12/15ns
32-pin,
IDT71V428
304-bit
MS-027,
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS STATIC RAM 4 MEG 512Kx 8-BIT ADVANCE INFORMATION IDT71V424 Integrated Devize Technology, li e . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times
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512Kx
IDT71V424
8/10/12/15ns
36-pin,
IDT71V424
304-bit
MS-027,
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IN5334B
Abstract: a8wg
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54260B MCM5L4260B MCM5V4260B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54260B is a 0.6n CMOS high-speed dynamic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS siiicon-gate
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MCM54260B
MCM5L4260B
MCM5V4260B
MCM5V4260BJ70
MCM5V4260BJ80
MCM5V4260BJ10
MCM5V4260BT70
MCM5V4260BT80
IN5334B
a8wg
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K356
Abstract: gti TRANSISTOR 2SK356
Text: TOSHIBA {DI S CR ET E/ OPT O} Ti 9097250 TOSHIBA DISCRETE/OPTO tfoììuht dF | ^7250 99D 16650 SEMICONDUCTOR DDlbbSG b D 3 \ TOSHIBA FIELD EFFECT TRANSISTOR 2SK356 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
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2SK356
K356
gti TRANSISTOR
2SK356
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS STATIC RAM 4 MEG 1M x 4-BIT Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71V428S IDT71V428L FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times
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IDT71V428S
IDT71V428L
10/12/15ns
32-pin,
IDT71V428
304-bit
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ln 3624
Abstract: ansi y14.5m-1982 decimal .xxxx 71V416S15
Text: PRELIMINARY IDT71V416 3.3V CMOS STATIC RAM 4 MEG 256Kx 16-BIT I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times
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256Kx
16-BIT)
IDT71V416
8/10/12/15ns
44-pin,
IDT71V416
194304-bit
high-reliabil005
MS-027,
ln 3624
ansi y14.5m-1982 decimal .xxxx
71V416S15
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Untitled
Abstract: No abstract text available
Text: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise
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V424S
IDT71V424L
10/12/15ns
36-pin,
44-pin,
IDT71V424
304-bit
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Untitled
Abstract: No abstract text available
Text: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times
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16-BIT)
10/12/15ns
44-pin,
IDT71V416
194304-bit
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brush dc motor control 200v 20a
Abstract: No abstract text available
Text: PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION_ _ _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses M O SFETs in the output stage while the
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PWR-82340
PWR-82342
PWR-82342
8234X-XX0
PWR-82340/342
brush dc motor control 200v 20a
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AN7258
Abstract: an7381
Text: Panasonic ^GDftË AN7381 h — > □ V • * h □ — ^ H H iS /T o n e C o n tro l C irc u it £ A N 7381 l ± , Unit : mm ATC I C T A N 7 2 5 6 , A N 7258 U i f 2.4 ± 0 .2 5 6.0 ± 0 .3 3.3 + 0.25 ffflti: £ i:i > jfNT* h— > 3 > h o — t fz, 't'o ■
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AN7381
150mV,
150mV
AN7258
an7381
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54190B MCM5L4190B MCM5V4190B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54190B is a 0.6n C M O S high-speed dynam ic random a ccess m em ory. It is organized as 262,144 e ighteen-bit w ords and fabricated with C M O S siiicon-gate pro
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MCM54190B
MCM5L4190B
MCM5V4190B
54190B
MCM54190BJ70
MCM54190BJ80
MCM54190BJ10
MCM5L4190BJ70
MCM5L4190BJ80
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for
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IDT71124
12/15/20ns
32-pin
IDT71124
576-bit
MO-061,
S5771
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CHN 920
Abstract: 71024S15 chn 830
Text: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options
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128Kx
IDT71024
15/17/20/25ns
15/20ns
12/15/17/20ns
IL-STD-883,
T71024
576-bit
MS-027,
CHN 920
71024S15
chn 830
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s0324
Abstract: land pattern for TSOP idt IDT land pattern tsop 6
Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for
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IDT71124
12/15/20ns
32-pin
576-bit
MO-061,
PSC-4033
s0324
land pattern for TSOP idt
IDT land pattern tsop 6
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Untitled
Abstract: No abstract text available
Text: D 000 PWR-82331 and PWR-82333 ILC DATA DEVICE ^ CORPORATION _ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PWR-82331 has a 200V rating and uses MOSFETs in the output stage while the
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OCR Scan
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PDF
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PWR-82331
PWR-82333
PWR-82333
PWR-82331/333
D-1/92-5M
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