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    VUO 35-12 N 0 7 Search Results

    VUO 35-12 N 0 7 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    62-08N

    Abstract: VUO 35-12 N 0 7 6n03 50-08N 6208N VUO 36-14 N 0 7 55-14N 2014n 82-08N 50-04N03
    Text: HbflbEHfc, 0 0 0 1 3 7 3 730 « I X Y Rectifier Bridges, 3~ 9 1• 1 J hj w \ w * L -N — v RRM vvRMS Type Í Í £ E 72 873 (M) ► New ► VUO 30-18 N 0 3 ’ VUO 30-16N 0 3 • VUO 20 ■'6N03 • VUO 30-14N 0 3 • VUO 20-14N 03 VUO 30-12N 0 3 • VUO 20-12N 03


    OCR Scan     		30-16N 30-14N 20-14N82-08N 105-18N 105-16N 105-14N07 105-12N 62-08N VUO 35-12 N 0 7 6n03 50-08N 6208N VUO 36-14 N 0 7 55-14N 2014n 82-08N 50-04N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Three Phase Rectifier Bridges V RSM V RRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Sym bol VUO 16 I dAVM v ¥ 4/5 T yp e r* VUO VUO VUO VUO VUO T k « 90°C , module T a = 4 5 °C R>iKA = 0.5 K/W , module I^AVM module Ifsu TVJ = 45°C ; t V t =


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU HICROELECTRONICS 75 d Ë | 374^7^5 000333^ 4 3749762 FUJITSU MICROELECTRONICS 78C 03339 FU JITSU M OS M em ories • M B 8 4 1 8 A -1 2 , M B 8 4 1 8 A -1 2 L, M B 8 4 1 8 A -1 5 , M B 8 4 1 8 A -1 5 L CMOS 16,384-Bit Static Random Access Memory Daaorlptlon


    OCR Scan     		T-46-23-12 384-Bit MB8416A 2048-word MB8418A B8418A-12 B8418A-12L B8418A-1SL PDF

    as1012

    Abstract: AS15 G LC3517A15 LC3517A-15 as15 h AS15 G IC LC3517
    Text: SANYO S EMI CONDUCT OR CORP S3E J> ? tï ei 7 0 7 b 0Q10CH3 a?T I TSAJ r-^ té -2 s -n l0 /d > n n fi n u m b r . EN 23611 CMOS LSI F SANYO i LC3517A. AM. AS. AL, AML, ASL 2048-word x 8-bit CMOS Static RAM OVERVIEW PACKAGE DIMENSIONS LC3517A series devices are silicon-gate CMOS, static


    OCR Scan     		i707b 0Q10CH3 LC3517A. 2048-word 3072-DIP24NS LC3S17A/AL) LC3517A LC3517AL, LC3517AML as1012 AS15 G LC3517A15 LC3517A-15 as15 h AS15 G IC LC3517 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1M x 16 SRAM MODULE molaic MS161000FKX-70/85/100/120 Issue 1.1 : April 1990 ADVANCE PRODUCT INFORMATION /" Sem iconductor Inc. 1,048,576 x 16 CMOS High Speed Static RAM Features Fast Access Times of 70/85/100/120 ns. 44 Pin DIL Package -1.9" pitch Low Power Standby 2mW typ. L suffix


    OCR Scan     		MS161000FKX-70/85/100/120 940mW 600mW MS161000FKXL1-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42 E ]> 71 bmM 2. OGI0 7 b l T I KM6264A/KM6264AL/KM6264ALL CMOS SRAM " T ^ e v ? 8 K x 8 B i t S t a t ic R A M FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns (max. • Low Power Dissipation Standby (CMOS): 10/jW (typ.) L-Verslon


    OCR Scan     		KM6264A/KM6264AL/KM6264ALL 10/jW 220mW KM6264A/AL/AL-L: 28-pin KM6264AG/ALG/ALG-L: 28-pln KM6264A/AL/AL-L 536-blt KM6264A/KM6264AL/KM6264AL-L PDF

    BUZ21

    Abstract: No abstract text available
    Text: SILICONIX INC 1ÖE D fc r'SiKcot. Siliconix in c o rp o ra te d h • ÖSS4735 00145*17 S BUZ21 JL M N-Channel Enhancemenr Mode Transistor T-3PI TOP VIEW TO-220AB PRODUCT SUMMARY V BRJDSS "W 0.10 100 O Id (A 19 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE


    OCR Scan     		SS4735 BUZ21 O-220AB QQ14bQQ BUZ21 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32,768 WORD x 16 BIT CMOS STATIC RAM DESCRIPTION PRELIMINARY The TC551632J is a 524,288 bits high speed static random access m emory organized as 32,768 words by 16 b its u sing CMOS technology, and operated from a single 5-volt supply. T oshiba's CMOS technology and advanced circuit form provide high speed feature.


    OCR Scan     		TC551632J TC55163 C-103 TC551632Jâ TC551632J-25, TC551632J-35 SOJ40 P-40Q 46MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SE MI CO NDUCTOR INC 1Û D e J 7 ^ 4 1 4 2 000S537 .— •. ' T-46-23-12 KM6264A/KM6264AL CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • • • • • •


    OCR Scan     		000S537 T-46-23-12 KM6264A/KM6264AL KM6264A/AL 538-bit 150ns 100/iA 00D5544 PDF

    tsop 338 IR

    Abstract: 1101 Static RAM LH52B256
    Text: LH52B256 FEATURES • Access Times: 70/90/100 ns • Automatic Power Down During Long Read Cycles • Low-Power Standby When Deselected CM O S 256 K 32K x 8 Static RAM High-frequency design techniques should be em­ ployed to obtain the best performance from this device.


    OCR Scan     		28-Pin, 600-mil 300-mil 450-mil LH52B256 28TSOP tsop 338 IR 1101 Static RAM PDF

    Untitled

    Abstract: No abstract text available
    Text: 6 5 ,5 36 W O R D x 4 BIT CM O S STA TIC RAM D ESCRIPTIO N The TC55465P/J is a 262,144 bits high speed static random access memory organized as 65,536 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's CMOS technology and advanced circuit form provide high speed feature.


    OCR Scan     		TC55465P/J TC55465P/-J TC55465P/Jâ TC55465P/J-20 TC55465P/J-35 PDF

    M51308SP

    Abstract: m51390asp circuit diagram m51412 m51308 m51390 51390ASP M51412SP M51390ASP c2th
    Text: MITSUBISHI ICs AV COMMON M51390ASP PAL/NTSC VIDEO CHROMA DEFLECTION DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 51390A S P is a s e m ic o n d u c to r in te grated circu it for video, chrom a, and d e fle c tio n . C om b ined w ith IC M 5 1346 A P B-Y OUT


    OCR Scan     		M51390ASP M51390ASP M51308SP m51390asp circuit diagram m51412 m51308 m51390 51390ASP M51412SP c2th PDF

    HV03

    Abstract: No abstract text available
    Text: blE D SUPERTEX INC • 67732^5 00Q3324 21b « S T X ^ Supertex inc. HV03 HV05 64-Channel Serial To Parallel Converter With Open Drain Outputs Ordering Information_ Package Options Device 80-Lead Quad Cerpak Gullwing 80-Lead Quad Plastic


    OCR Scan     		00Q3324 64-Channel 80-Lead HV0322DG HV0322PG HV0322T 80-Lead HV0322X HV03 PDF

    2SK2871-01

    Abstract: No abstract text available
    Text: Thl» material and the Information herein 1« the properly of Fuji Electric Co.,Ud. They »hall ba neither reproduced, copied, lent, or disclosed In any way whatsoever tor the use of any third parly nor used for the manufacturing purpose» without the aspre» written consent of Fvjl Cedric Co.,Ud.


    OCR Scan     		2SK2871-01 2SK2871-01 O-220 H04-0Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: G E C P L E S S E Y ma9187 — !t— — MB— • — — Radiation Hard 65536x1 Bit Static RAM Preliminary Data S10309PDS Issue 2.3 October 1990 Features • 1.5|im CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 10* rad (Si)


    OCR Scan     		ma9187 65536x1 S10309PDS MA9187 65536x1 Cobalt-60 PDF

    MB81C78A-35

    Abstract: MB81C78A ICE 47E fujitsu 1988 IP-28P-M
    Text: FUJITSU MICROELECTRONICS 47E D BTMTTbS 0G1B77S 0 « F M I /Z April 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory


    OCR Scan     		0G1B77S MB81C78A-35/-45 64K-BIT MB81C78A T-46-23-12 MB81C78A-35 MB81C78A-45 C-28P- C28054S-1C MB81C78A-35 ICE 47E fujitsu 1988 IP-28P-M PDF

    V6366

    Abstract: Yamaha V6366 yamaha "light pen" YAMAHA RA 200
    Text: YAM AHA L S I V6366 PCDC • OUTLINE The PCDC (Panel Display & CRT Display Controller) is a display controller that has the two functions: (1) the display control o f a high-capacity flat-panel display (hereafter referred to as a “Panel”) and (2) the display control of a raster-scan type CRT. By merely performing


    OCR Scan     		V6366 CA95112 3K-0305 V6366 Yamaha V6366 yamaha "light pen" YAMAHA RA 200 PDF

    BJT with V-I characteristics

    Abstract: MH1M09J-10 MH1M09J-12 MH1M09JA-10 M08JA Tda 7366
    Text: 9 - ¿ ? í M IT S U B IS H I L S Is u. •tc . £ ■ ¡V 1 H 1 ÎV 1 0 9 ZTS K 1 1 Í Z ' s i T '% - 3 - 1 0 , - 1 2 , - 1 5 / l A - I O , - 1 2 , - 1 5 1 0 4 3 5 7 6 - W O f j p B Y 9 - B I T D Y N A M IC R AM D E S C R I P T IO N PIN C O N F IG U R A T IO N [TOP VIEW


    OCR Scan     		H1M09 MHlM0ei3A-10 1043576-WORD MHTM09J. 1C48576 MHIM09JA IM09J-I2 M09WIA-12 M03JA-I5 MH1M09J-10 BJT with V-I characteristics MH1M09J-12 MH1M09JA-10 M08JA Tda 7366 PDF

    qml-38535

    Abstract: 5962-XXXXXZZ QML-38534 5962-9207302HXX
    Text: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A REV SHEET 1 AMSC N/A 4 5 6 7 8 9 10 11 12 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 454A4 CHECKED BY Michael C. Jones APPROVED BY THIS DRAWING IS AVAILABLE


    OCR Scan     		454A4 QML-38534. 5962-9207301HXX MN5100H/8 5962-9207302HXX MN5101H/B qml-38535 5962-XXXXXZZ QML-38534 5962-9207302HXX PDF

    LC3564Q-10

    Abstract: sanyo vcc 3924 WC-260 LC3564Q LC3564Q-70 LC3564QM70 LC3564QM
    Text: I Ordering number EN 3924B LC3564Q, QM, QS CM OS LSI 64 Kbit 8192 x 8 CMOS Static RAM Pin A ssign m e n t O verview LC3564Q scries dcviccs are silicon-gate, CMOS static RAMs configured as 8192 x 8 bits. They incorporate an output enable for high-speed memory access, two chip


    OCR Scan     		3924B LC3564Q, LC3564Q 28-pin LC3564Q-70 LC3564Q-10 sanyo vcc 3924 WC-260 LC3564QM70 LC3564QM PDF

    CT8281

    Abstract: CT10
    Text: 2 MEG X 6 FLASH Dense-PacJdicrosystem s, Inc. 0 DPZ2MX8J3 EEPROM "J" LEADED STACK MODULE PRELIMINARY DESCRIPTION: The DPZ2MX8J3 "STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC


    OCR Scan     		120ns 150ns 170ns 200ns 250ns 30aobsoo CT8281 CT10 PDF

    PD16305

    Abstract: IC-3312 uPD16305 D16305 1B005
    Text: DATA SHEET MOS INTEGRATED CIRCUIT u P D 1 6 3 0 5 40-BIT AC-PDP DRIVER D ESC R IPTIO N The/jPD16305 is an AC plasm adisplay panel {PDP> ro w d riv e rw h ic h uses a high w ithstand voltageCMOS process. It is composed of a 40-bit bidirectional shift register, latch circuit, and a high withstand voltage CMOS driver block.


    OCR Scan     		40-BIT uPD16305 400mA 400mA) PD16305 IC-3312 D16305 1B005 PDF

    Untitled

    Abstract: No abstract text available
    Text: I 1 3 1993 APR C d p DPZ512X16A3 m 512K X 16 FLASH EEPRO M DENSE-STACK M O D U LE PRELIM INARY DESCRIPTION: The D PZ512X 16A 3 "DCN SE-STACK" module is a revolutionary new memory subsystem using DensePac Microsystems' ceramic Stackable leadless Chip C arriers S L C C mounted on a co-fired ceram ic


    OCR Scan     		DPZ512X16A3 PZ512X DPZ512X16A3 density25 120ns 150ns 170ns 200ns 250ns 125-C PDF

    Untitled

    Abstract: No abstract text available
    Text: SUPERSEDED BY MT58LC32K32/36D8 M IC R O N 32K X MT58LC32K32/36D7 32/36 SYNCBURST SRAM 32K x 32/36 SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE D ESELEC T AND SELEC TABLE BURST MODE FEATURES • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 6, 7 and 8ns


    OCR Scan     		MT58LC32K32/36D8 MT58LC32K32/36D7 100-Pin MTS8LC32K32/3607 PDF