NJG1133MD7
Abstract: MLK0603
Text: NJG1133MD7 W-CDMA Triple Band LNA GaAs MMIC QGENERAL DISCRIPTION QPACKAGE OUTLINE NJG1133MD7 is a triple band LNA IC designed for W-CDMA/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode
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NJG1133MD7
NJG1133MD7
800MHz
EQFN14-D7
EQFN14-D7
397mm
0034g
MLK0603
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PDF
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Untitled
Abstract: No abstract text available
Text: NJG1133MD7 W-CDMA Triple Band LNA GaAs MMIC !GENERAL DISCRIPTION !PACKAGE OUTLINE NJG1133MD7 is a triple band LNA IC designed for W-CDMA/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode
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NJG1133MD7
NJG1133MD7
800MHz
EQFN14-D7
EQFN14-D7
397mm
EQFN14-D7)
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PDF
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MLK0603
Abstract: NJG1133MD7
Text: NJG1133MD7 W-CDMA Triple Band LNA GaAs MMIC !GENERAL DISCRIPTION !PACKAGE OUTLINE NJG1133MD7 is a triple band LNA IC designed for W-CDMA/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode
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NJG1133MD7
NJG1133MD7
800MHz
EQFN14-D7
EQFN14-D7
397mm
133MD7
EQFN14-D7)
MLK0603
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PDF
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LNA at 15 GHz with input power -160dB
Abstract: NJG1119PB4 HK1005 LQW15A
Text: NJG1119PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION QPACKAGE OUTLINE The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode.
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NJG1119PB4
NJG1119PB4
800MHz
FFP12
FFP12-B4
2140MHz
885MHz
LNA at 15 GHz with input power -160dB
HK1005
LQW15A
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Untitled
Abstract: No abstract text available
Text: NJG1119PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION QPACKAGE OUTLINE The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode.
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NJG1119PB4
800MHz
FFP12
NJG1119
FFP12-B4
2140MHz
885MHz
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INV20
Abstract: No abstract text available
Text: NJG1123PB5 W-CDMA Triple LNA GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE NJG1123PB5 is a Triple band LNA IC designed for W-CDMA / UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode.
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NJG1123PB5
800MHz
FFP16
FFP16-B5
2140MHz,
1860MHz16
885MHz
2140MHz
INV20
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PDF
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mlg0603
Abstract: FFP16 FFP16-B5 HK1005 NJG1123PB5
Text: NJG1123PB5 W-CDMA Triple LNA GaAs MMIC !GENERAL DESCRIPTION !PACKAGE OUTLINE NJG1123PB5 is a Triple band LNA IC designed for W-CDMA / UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen.
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NJG1123PB5
NJG1123PB5
800MHz
FFP16
FFP16-B5
mlg0603
FFP16-B5
HK1005
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diode 1GHz
Abstract: No abstract text available
Text: AMPLIFIERS 1.9/2.1GHz BAND CDMA LNA GaAs MMIC NJG1105F1 DATA SHEET TENTATIVE • GENERAL DESCRIPTION NJG1105F1 is a Low Noise Amplifier GaAs MMIC designed for 1.9/2.1GHz digital cellular phone handsets such as PCS and W-CDMA. This amplifier provides low noise figure, high gain and high
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NJG1105F1
NJG1105F1
diode 1GHz
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HK1608
Abstract: NJG1105F DCS1800 GRM36 HK1005
Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and
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NJG1105F
NJG1105F
DCS1800,
1860MHz
1960MHz
2140MHz
1860/1960/2140MHz
HK1608
DCS1800
GRM36
HK1005
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2185v
Abstract: HK1005 LQW15A NJG1122PB4
Text: NJG1122PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION The NJG1122PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP12–B4 is adopted.
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NJG1122PB4
NJG1122PB4
800MHz
FFP12
FFP12-B4
2140MHz16
885MHz
2185v
HK1005
LQW15A
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PDF
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dd s22
Abstract: DCS1800 GRM36 HK1005 HK1608 NJG1105F
Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and
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NJG1105F
NJG1105F
DCS1800,
1860MHz
1960MHz
2140MHz
1860/1960/2140MHz
dd s22
DCS1800
GRM36
HK1005
HK1608
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DCS1800
Abstract: GRM36 HK1005 HK1608 NJG1105F dd s22
Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and
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NJG1105F
NJG1105F
DCS1800,
1860MHz
1960MHz
2140MHz
1860/1960/2140MHz
DCS1800
GRM36
HK1005
HK1608
dd s22
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FFP16
Abstract: FFP16-B5 NJG1125PB5
Text: NJG1125PB5 W-CDMA Triple LNA GaAs MMIC QGENERAL DESCRIPTION NJG1125PB5 is a Triple band LNA IC designed for W-CDMA /UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP16–B5 is adopted.
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NJG1125PB5
NJG1125PB5
800MHz
FFP16
FFP16-B5
FFP16-B5
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Untitled
Abstract: No abstract text available
Text: NJG1122PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP12–B4 is adopted.
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NJG1122PB4
NJG1119PB4
800MHz
FFP12
NJG1122PB4
FFP12-B4
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HK1005
Abstract: NJG1116HB3
Text: NJG1116HB3 2.1GHz Band LNA GaAs MMIC •GENERAL DESCRIPTION NJG1116HB3 is a LNA IC designed for 2.1GHz band W-CDMA cellular phone .This IC has the function which passes LNA, and high gain mode or low gain mode can be chosen. An ultra small and ultra thin package of USB8 is
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NJG1116HB3
NJG1116HB3
2140MHz
HK1005
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HK1005
Abstract: MLG0603Q NJG1126HB6
Text: NJG1126HB6 2.1GHz Band LNA GaAs MMIC QGENERAL DESCRIPTION NJG1126HB6 is a LNA IC designed for 2.1GHz band W-CDMA cellular phone . This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen. High IIP3 and a low noise are achieved at the High gain mode.
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NJG1126HB6
NJG1126HB6
HK1005
MLG0603Q
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HMC604LP3
Abstract: No abstract text available
Text: HMC604LP3 / 604LP3E v00.0308 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz Amplifiers - low Noise - smT 7 Typical Applications Features The HmC604lp3 / HmC604lp3e is ideal for: Noise figure: 1.5 dB • wimAX/C-band radio output ip3: +26 dBm
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HMC604LP3
604LP3E
HMC604LP3E
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DSRC 5.8 GHz
Abstract: Tower Mounted Amplifiers Schematic schematic dsrc HMC604LP3 HMC604LP3E
Text: HMC604LP3 / 604LP3E v00.0308 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz LOW NOISE AMPLIFIERS - SMT 5 Typical Applications Features The HMC604LP3 / HMC604LP3E is ideal for: Noise Figure: 1.5 dB • WiMAX/C-band Radio Output IP3: +26 dBm
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HMC604LP3
604LP3E
HMC604LP3E
DSRC 5.8 GHz
Tower Mounted Amplifiers Schematic
schematic dsrc
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DSRC 5.8 GHz
Abstract: No abstract text available
Text: HMC604LP3 / 604LP3E v00.0308 Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz Typical Applications Features The HMC604LP3 / HMC604LP3E is ideal for: Noise Figure: 1.5 dB • WiMAX/C-band Radio Output IP3: +26 dBm
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HMC604LP3
604LP3E
HMC604LP3E
DSRC 5.8 GHz
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CMH0819
Abstract: VQFN-24
Text: GaAs MMIC CMH0819 Target Datasheet • High-Linearity, Dual-Band LNA/Mixer IC for PCS IF Out use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNAs LNA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LO CELLULAR • LO – Input power range: -7.0 to 0 dBm
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CMH0819
VQFN-24
CMH0819
VQFN-24
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CAP 0402
Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm
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CMH0819
VQFN-24
CMH0819
CAP 0402
GaAs FET amplifer
mmic marking c8
GaAs FET amplifer chip
VQFN-24
MMIC marking code 132
MMIC marking code 101
mmic code marking P 18
mmic c8
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XR1006-BD
Abstract: DM6030HK TS3332LD XR1006 XR1006-BD-000V XR1006-BD-EV1
Text: 18.0-25.0 GHz GaAs MMIC Receiver August 2007 - Rev 13-Aug-07 Features Chip Device Layout R1006-BD Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing
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13-Aug-07
R1006-BD
MIL-STD-883
XR1006-BD-000V
XR1006-BD-EV1
XR1006
XR1006-BD
DM6030HK
TS3332LD
XR1006-BD-000V
XR1006-BD-EV1
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R1006 transistor
Abstract: transistor R1006 r1006 R1006 diode 84-1LMI XR1006
Text: 18.0-25.0 GHz GaAs MMIC Receiver R1006 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing
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R1006
13-May-05
MIL-STD-883
R1006 transistor
transistor R1006
r1006
R1006 diode
84-1LMI
XR1006
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DM6030HK
Abstract: TS3332LD XR1006 XR1006-BD XR1006-BD-000V XR1006-BD-EV1
Text: 18.0-25.0 GHz GaAs MMIC Receiver August 2007 - Rev 13-Aug-07 Features Chip Device Layout R1006-BD Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing
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13-Aug-07
R1006-BD
MIL-STD-883
XR1006-BD-000V
XR1006-BD-EV1
XR1006
DM6030HK
TS3332LD
XR1006-BD
XR1006-BD-000V
XR1006-BD-EV1
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