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    W18 TRANSISTOR Search Results

    W18 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    W18 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    29070* intel

    Abstract: No abstract text available
    Text: Intel Wireless Flash Memory W18 128-Mbit W18 Family Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed — 20 ns Page mode read speed


    Original     		128-Mbit 128-bit 32Mbit 64Mbit 128Mbit 29070* intel PDF

    01171

    Abstract: 29070* intel
    Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 128-bit 32Mbit 64Mbit 128Mbit 01171 29070* intel PDF

    W18 90

    Abstract: H1061 28F128W18 28F320W18 28F640W18 Transistor p1E 29070* intel
    Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed


    Original     		28F320W18, 28F640W18, 28F128W18 128-bit 32Mbit 64Mbit 128Mbit W18 90 H1061 28F128W18 28F320W18 28F640W18 Transistor p1E 29070* intel PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features Performance — 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit — 14 ns Clock to Data Output (tCHQV) — 20 ns Page Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 128-Mbit 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) PDF

    28F128W18

    Abstract: 28F320W18 28F640W18 intel DOC matrix 7x8
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features Performance — 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit — 14 ns Clock to Data Output (tCHQV) — 20 ns Page Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 128-Mbit 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 28F128W18 28F320W18 28F640W18 intel DOC matrix 7x8 PDF

    740-0007

    Abstract: 29070* intel
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz with zero Wait state — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 128-bit 64-bits 56-Ball 740-0007 29070* intel PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz with zero Wait state — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 128-bit 64-bits and031 32-Mbit 64-Mbit 128-Mbit PDF

    strataflash 512mbit

    Abstract: FLASH MEMORY 38F FLASH MEMORY 48F transistor w18 57 small Intel SCSP transistor R13 P2F
    Text: Numonyx Wireless Flash Memory W18 Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed — 20 ns Page mode read speed


    Original     		128-Bit x32SH x16SB x16/x32 strataflash 512mbit FLASH MEMORY 38F FLASH MEMORY 48F transistor w18 57 small Intel SCSP transistor R13 P2F PDF

    740-0007

    Abstract: 29070* intel
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 740-0007 29070* intel PDF

    3132* intel

    Abstract: No abstract text available
    Text: Intel Wireless Flash Memory W18 with A/D Multiplexed I/O Datasheet Product Features High Performance Read-While-Write/Erase — Burst frequency at 54 MHz — 60 ns Initial Access Read Speed — 14 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed


    Original     		28-Jul-2006 313272-002US 3132* intel PDF

    PH28F640W18BE60

    Abstract: PH28F640W18BD60 PH28F640W18TE60 PH28F320W18BE60 GE28F640W18TE60 PH28F640W18 GE28F640W18BD60 GE28F640W18TD60 28F128W18 28F320W18
    Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed


    Original     		28F320W18, 28F640W18, 28F128W18 128-bit CapabiD60 GE28F320W18TE60 GE28F320W18BE60 PH28F320W18TD60 PH28F320W18BD60 PH28F320W18TE60 PH28F640W18BE60 PH28F640W18BD60 PH28F640W18TE60 PH28F320W18BE60 GE28F640W18TE60 PH28F640W18 GE28F640W18BD60 GE28F640W18TD60 28F128W18 28F320W18 PDF

    29070* intel

    Abstract: transistor w18 57 small
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 29070* intel transistor w18 57 small PDF

    PH28F640W18BD60

    Abstract: PH28F128W18BD60 PH28F640W18BE60 PH28F320W18BD60 29070* intel ph28f128w18td60
    Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed


    Original     		28F320W18, 28F640W18, 28F128W18 128-bit GE28F320W18TD60 GE28F320W18BD60 GE28F320W18TE60 GE28F320W18BE60 PH28F320W18TD60 PH28F320W18BD60 PH28F640W18BD60 PH28F128W18BD60 PH28F640W18BE60 29070* intel ph28f128w18td60 PDF

    28F128W18

    Abstract: 28F320W18 28F640W18 intel DOC
    Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 128-bit 64-bits 32Mbit 64Mbit 128Mbit 28F128W18 28F320W18 28F640W18 intel DOC PDF

    29070* intel

    Abstract: No abstract text available
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz with zero Wait state — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed


    Original     		28F320W18, 28F640W18, 28F128W18 128-bit 64-bits and171 56-Ball 29070* intel PDF

    Stacked 4MB NOR FLASH & SRAM with AD multiplexed

    Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
    Text: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed


    Original     		x32SH x16SB x16/x32 Stacked 4MB NOR FLASH & SRAM with AD multiplexed FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball PDF

    MAGNETIC HEAD circuit

    Abstract: magnetic vertical water level sensor 77G DIODE water level indicator asbestos safety data sheet WATER LEVEL CONTROLLER water level controller circuit diagram circuit diagram water level sensor THC2 GLUE
    Text: SERIES Hot Melt Glue Detector LA-T EZ-10 TH Water Detection Wire Flaw Detection Hot Melt Glue Detection PARTICULAR USE SENSORS TH Quick, Reliable and Non-contact Detection of Hot Melt Glue Marked Miniature Sensor Head Wide Sensing Area Spot type The sensor head can be mounted in a congested and tight place as it has a miniature size of W18‫ן‬H33‫ן‬D23mm.


    Original     		EZ-10 W18H33D23mm. 300mm, TH-12) UA-11 SUS304) MAGNETIC HEAD circuit magnetic vertical water level sensor 77G DIODE water level indicator asbestos safety data sheet WATER LEVEL CONTROLLER water level controller circuit diagram circuit diagram water level sensor THC2 GLUE PDF

    TMS320C6711 DSK module

    Abstract: OPA2132 TMS320C6711 DSK kit circuit diagram ADS8364EVM SN74CBT3257 TPS2104 ADS8364 OPA2350 TMS320C6711 DSK manual
    Text: ADS8364EVM User’s Guide April 2002 Data Acquisition Products SLAU084 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		ADS8364EVM SLAU084 TPS2104D ADS8364 30-Jan-2002 TMS320C6711 DSK module OPA2132 TMS320C6711 DSK kit circuit diagram ADS8364EVM SN74CBT3257 TPS2104 OPA2350 TMS320C6711 DSK manual PDF

    OPA2132

    Abstract: No abstract text available
    Text: ADS8364EVM User’s Guide April 2002 Data Acquisition Products SLAU084 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		ADS8364EVM SLAU084 TPS2104D ADS8364 30-Jan-2002 OPA2132 PDF

    Untitled

    Abstract: No abstract text available
    Text: Lproauctit One. 'jeis.eu 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF230 (SILICON) The RF Line 1.5 W -90MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTORS NPN SILICON . . designed for 12.5 Volt, mid-band targe-signal amplifier applications in industrial and commercial FM equipment operating in the


    Original     		MRF230 -90MHz 90MHz 2S-380 56-5BQ-S5-3B PDF

    IPC-6012

    Abstract: R1651 R165-1 SN65HVD22 SN65HVD22D CRCW1206000F CRCW1206101F IPC-A-600 SLLU057
    Text: SN65HVD22EVM USER’S GUIDE March 2003 High-Performance Linear/Interface Products SLLU057 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		SN65HVD22EVM SLLU057 27-Feb-2002 IPC-6012 R1651 R165-1 SN65HVD22 SN65HVD22D CRCW1206000F CRCW1206101F IPC-A-600 SLLU057 PDF

    Untitled

    Abstract: No abstract text available
    Text: wmmt BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    OCR Scan     		BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T 20-Jan-99 BFP181T/BFP1hay PDF

    w18 transistor

    Abstract: marking W18 TRANSISTOR w18 BFP181TW SOT W18
    Text: BFP181TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain


    Original     		BFP181TW D-74025 25-Oct-96 w18 transistor marking W18 TRANSISTOR w18 BFP181TW SOT W18 PDF

    TS PQ4 24

    Abstract: TM4C129LNCZAD
    Text: mikromedia 5 for Tiva Amazingly compact, all-on-a-single-pcb development board that carries 5’’ TFT Touch Screen and lots of multimedia peripherals, all driven by a powerful TM4C129L X NCZAD TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having


    Original     		TM4C129L TS PQ4 24 TM4C129LNCZAD PDF