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    W1S TRANSISTOR Search Results

    W1S TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    W1S TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    infineon marking W1s SOT23

    Abstract: marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23
    Text: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 30 mA 2 3 • Complementary type: BFR92P NPN 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFT92 Marking W1s Pin Configuration


    Original     		BFT92 BFR92P infineon marking W1s SOT23 marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23 PDF

    infineon marking W1s SOT23

    Abstract: marking W1S sot23
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original     		BFT92 VPS05161 infineon marking W1s SOT23 marking W1S sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5  High breakdown voltage 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)


    Original     		SMBTA06UPN VPW09197 EHA07177 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5  High breakdown voltage 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)


    Original     		SMBTA06UPN VPW09197 EHA07177 PDF

    30227

    Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
    Text: BFT 92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s


    Original     		VPS05161 OT-23 900MHz Oct-25-1999 30227 IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23 PDF

    BFT92

    Abstract: 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original     		BFT92 VPS05161 900MHz Jul-16-2001 BFT92 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s


    OCR Scan     		Q62702-F1681 OT-323 0122E04 900MHz D1525D5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Top View Morking on SOI-db.} pockooe (for example W1s corresponds to pin I ol device Direction of Unreeling


    OCR Scan     		BFS17S Q62702-F1645 OT-363 B235b05 235b05 012215t. G125157 PDF

    infineon marking W1s SOT23

    Abstract: BFT92 w1s sot23 marking W1S sot23 30227 BCW66 E6327
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original     		BFT92 VPS05161 15rements infineon marking W1s SOT23 BFT92 w1s sot23 marking W1S sot23 30227 BCW66 E6327 PDF

    SMBTA06UPN

    Abstract: SC74
    Text: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5  High breakdown voltage 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)


    Original     		SMBTA06UPN VPW09197 EHA07177 EHP00821 EHP00815 Aug-21-2002 EHP00817 SMBTA06UPN SC74 PDF

    Transistor BFT 98

    Abstract: Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w
    Text: BFT 92W PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92W NPN 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92W W1s


    Original     		VSO05561 OT-323 900MHz Oct-25-1999 Transistor BFT 98 Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w PDF

    W1s transistor

    Abstract: marking W1S BCR10PN VPS05604
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R 1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation


    Original     		BCR10PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Nov-29-2001 W1s transistor marking W1S BCR10PN VPS05604 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR 10PN NPN/PNP Silicon Digital Transistor Array 4 5  Switching circuit, inverter, interface circuit, 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation


    Original     		VPS05604 OT-363 EHA07193 EHA07176 OT-363 Mar-28-2001 PDF

    W1s transistor

    Abstract: No abstract text available
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R 1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation


    Original     		BCR10PN VPS05604 EHA07193 OT-363 EHA07176 OT363 W1s transistor PDF

    infineon marking W1s

    Abstract: marking code w1s marking W1S Marking w1s sot
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		BCR10PN EHA07176 OT-363 EHA07193 OT363 infineon marking W1s marking code w1s marking W1S Marking w1s sot PDF

    marking code w1s

    Abstract: infineon marking W1s
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		BCR10PN EHA07176 EHA07193 OT-363 OT363 marking code w1s infineon marking W1s PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		BCR10PN EHA07176 OT-363 EHA07193 PDF

    BCR10PN

    Abstract: BCR108S MARKING w1s sot363
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		BCR10PN EHA07176 OT-363 EHA07193 BCR10PN BCR108S MARKING w1s sot363 PDF

    infineon marking W1s

    Abstract: marking code w1s marking 215 marking B1 sot363
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		BCR10PN EHA07176 EHA07193 OT-363 OT363 infineon marking W1s marking code w1s marking 215 marking B1 sot363 PDF

    BCR39PN

    Abstract: VPS05604
    Text: BCR39PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1 = 22k) 2 3 1 VPS05604 Tape loading orientation


    Original     		BCR39PN VPS05604 OT-363 EHA07193 EHA07290 OT363 Nov-29-2001 BCR39PN VPS05604 PDF

    BCR08PN

    Abstract: VPS05604 IC-101
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original     		BCR08PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Nov-29-2001 BCR08PN VPS05604 IC-101 PDF

    transistor 1Bs

    Abstract: ic 817 1BS transistor marking 1Bs BC817UPN SC74
    Text: BC817UPN NPN/PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 Tape loading orientation


    Original     		BC817UPN VPW09197 EHA07177 Collector-emitt10 EHP00223 EHP00222 EHP00224 EHP00218 Aug-21-2002 transistor 1Bs ic 817 1BS transistor marking 1Bs BC817UPN SC74 PDF

    BCR19PN

    Abstract: VPS05604 CONFIGURATION OF IC common collector pnp array "two TRANSISTORs" sot-363 pnp npn Marking 654
    Text: BCR19PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=4.7k) 2 3 1 VPS05604 Tape loading orientation


    Original     		BCR19PN VPS05604 OT-363 EHA07193 EHA07290 OT363 Nov-29-2001 BCR19PN VPS05604 CONFIGURATION OF IC common collector pnp array "two TRANSISTORs" sot-363 pnp npn Marking 654 PDF

    BCR22PN

    Abstract: "two TRANSISTORs" sot-363 pnp npn marking WPs VPS05604 Marking wps sot
    Text: BCR22PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=22k, R2=22k) 2 1 VPS05604 Tape loading orientation


    Original     		BCR22PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Dec-13-2001 BCR22PN "two TRANSISTORs" sot-363 pnp npn marking WPs VPS05604 Marking wps sot PDF