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    W2 I 87 Price and Stock

    Samsung Electro-Mechanics CIGW252010GLR47MNE

    Power Inductors - SMD CIGW,Wire wound,1008,0.47uH,1.0?,7 embossed,-20 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CIGW252010GLR47MNE 114,623
    • 1 $0.28
    • 10 $0.227
    • 100 $0.187
    • 1000 $0.154
    • 10000 $0.119
    		Buy Now

    Samsung Electro-Mechanics CIGW252010GL4R7MNE

    Power Inductors - SMD CIGW,Wire wound,1008,4.7uH,1.0?,7 embossed,-20 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CIGW252010GL4R7MNE 87,922
    • 1 $0.28
    • 10 $0.227
    • 100 $0.187
    • 1000 $0.154
    • 10000 $0.112
    		Buy Now

    Samsung Electro-Mechanics CIGW201610GH4R7MLE

    Power Inductors - SMD CIGW,Wire wound,0806,4.7uH,1.0?,7 embossed,-20 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CIGW201610GH4R7MLE 81,785
    • 1 $0.25
    • 10 $0.166
    • 100 $0.129
    • 1000 $0.117
    • 10000 $0.085
    		Buy Now

    Samsung Electro-Mechanics CIGW252010GL2R2MNE

    Power Inductors - SMD CIGW,Wire wound,1008,2.2uH,1.0?,7 embossed,-20 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CIGW252010GL2R2MNE 76,023
    • 1 $0.11
    • 10 $0.077
    • 100 $0.06
    • 1000 $0.052
    • 10000 $0.051
    		Buy Now

    Samsung Electro-Mechanics CIGW252010GL1R0MNE

    Power Inductors - SMD CIGW,Wire wound,1008,1.0uH,1.0?,7 embossed,-20 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CIGW252010GL1R0MNE 19,049
    • 1 $0.34
    • 10 $0.223
    • 100 $0.173
    • 1000 $0.157
    • 10000 $0.135
    		Buy Now
    Find more W2 I 87 price and stock on Findchips.com

    W2 I 87 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    microswitch crouzet

    Abstract: 83272001
    Text: • Rolling blind ■ Electrical distribution ■ PCB applications M i c ro sw i t ch e s subminiature V4D Microswitches subminiature V4D Crouzet Presentation ■ Adaptation p. 3 ■ Customisation is our business p. 4 ■ V4D Advantages p. 5 ■ Ordering information


    Original     		PDF

    LM78L05ACM-ND

    Abstract: LM78L05ACMND C210 TL122
    Text: PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced


    Original     		PTFA091203EL PTFA091203EL 120-watt, H-33288-6 LM78L05ACM-ND LM78L05ACMND C210 TL122 PDF

    Clipper C300

    Abstract: A158 IC iveco iveco electrical Intergraph C300 negative clipper Clipper male dock connector DD1 positive clipper Royal OHM
    Text: CLIPPER C300 32-Bit Compute Engine Advance Information F ea tures • • Byte, halfword, word, and quadword transfers Support for both big endian and little endian byte orderings High Performance • 50 MHz single-phase clock • 50 MIPS peak execution rate


    OCR Scan     		32-Bit C300C3DLX Clipper C300 A158 IC iveco iveco electrical Intergraph C300 negative clipper Clipper male dock connector DD1 positive clipper Royal OHM PDF

    TRANSISTOR tl131

    Abstract: 100B100JW500X tl241 tl239 TRANSISTOR c104 c102 TRANSISTOR TMM4 A2322 c103 TRANSISTOR TL107 linear
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-37248-2 TRANSISTOR tl131 100B100JW500X tl241 tl239 TRANSISTOR c104 c102 TRANSISTOR TMM4 A2322 c103 TRANSISTOR TL107 linear PDF

    TL139

    Abstract: c803
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, H-33288-6 H-34288-4/2 TL139 c803 PDF

    TL140

    Abstract: No abstract text available
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL140 PDF

    WH AE

    Abstract: p929
    Text: OLWH07   #  . [  '5$0 $67 3$*( 02'( %&#$ 25'(5,1* ,1)250$7,21  3$&.$*( ; RUJDQL]DWLRQ )$67 3$*( DFFHVV PRGH O  $ %\WH:RUG 5HDG:ULWH RSHUDWLRQ O 6LQJOH 9 H O O SLQ PLO 62-  SRZHU VXSSO\ O 77/FRPSDWLEOH LQSXWV DQG RXWSXWV


    Original     		OLWH07 77/FRPSDWLEOH WH AE p929 PDF

    diagrams hitachi ecu

    Abstract: transistor W2E HEV40M Y3FS wxg led HD6433292F u33x R4EE
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		FP-64A) TFP-80C) H8/3297 diagrams hitachi ecu transistor W2E HEV40M Y3FS wxg led HD6433292F u33x R4EE PDF

    SCR bt 107

    Abstract: BTS 308 BT 151 PIN DIAGRAM scr bt 119 HD6433292 HD6433294 HD6433296 HD6433297 HD6473294 HD6473297
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		FP-64A) TFP-80C) H8/3297 SCR bt 107 BTS 308 BT 151 PIN DIAGRAM scr bt 119 HD6433292 HD6433294 HD6433296 HD6433297 HD6473294 HD6473297 PDF

    TRANSISTOR tl131

    Abstract: TL235 TL231 TL137 tl117 TL130 tl134 Tl232 C804 tl127
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.


    Original     		PTFA091503EL PTFA091503EL 150-watt, H-33288-6 84MHz TRANSISTOR tl131 TL235 TL231 TL137 tl117 TL130 tl134 Tl232 C804 tl127 PDF

    PCC104bct-nd

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.


    Original     		PTFA091503EL PTFA091503EL 150-watt, H-33288-6 84MHz PCC104bct-nd PDF

    TL817

    Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
    Text: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PTFB093608FV PTFB093608FV H-34275G-6/2 PDF

    PTFB093608

    Abstract: 32c216 PTFB093608SV c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143
    Text: PTFB093608SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PTFB093608SV PTFB093608SV H-34275G-6/2 PTFB093608 32c216 c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143 PDF

    TL2322

    Abstract: transistor tl120
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PTFB211803EL PTFB211803FL PTFB211803FL 180-watt H-33288-6 H-34288-4/2 TL2322 transistor tl120 PDF

    transistor c237

    Abstract: capacitor 471 c221 capacitor TRANSISTOR c104 C103 c104 c804 TL227 c221 TRANSISTOR C11256 B0828
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include


    Original     		PTFB082817FH PTFB082817FH H-34288-4/2 transistor c237 capacitor 471 c221 capacitor TRANSISTOR c104 C103 c104 c804 TL227 c221 TRANSISTOR C11256 B0828 PDF

    atc200b104kw50

    Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
    Text: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183404F PTFB183404F 340-watt atc200b104kw50 TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147 PDF

    PTFB182503FL

    Abstract: TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND tl136 PTFB182503 ER805 tl1182 ptfb182503el tl239
    Text: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input


    Original     		PTFB182503EL PTFB182503FL 240-watt H-33288-6 H-34288-4/2 TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND tl136 PTFB182503 ER805 tl1182 tl239 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6 H-34288-4/2 PDF

    NRSA101M100V

    Abstract: NRSA102M25V12.5X20 nrsa101m16v6.3x11 NRSA221M63V10X20 nrsa470 NRSA101M25V6.3X11 NRSA102M16V10X20
    Text: Miniature Aluminum Electrolytic Capacitors RADIAL LEADS, POLARIZED, STANDARD CASE SIZING NRSA RoHS Compliant NRSS today’s standard NRSA Series includes all homogeneous materials (reduced sizes) *See Part P Number N b System S for f Details D il CHARACTERISTICS


    Original     		100Vdc 10x12 10x16* 10x20* NRSA101M100V NRSA102M25V12.5X20 nrsa101m16v6.3x11 NRSA221M63V10X20 nrsa470 NRSA101M25V6.3X11 NRSA102M16V10X20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Miniature Aluminum Electrolytic Capacitors NRSA Series RADIAL LEADS, POLARIZED, STANDARD CASE SIZING RoHS Compliant NRSA NRSS today’s standard (reduced sizes) includes all homogeneous materials *See Part Number System for Details CHARACTERISTICS Rated Voltage Range


    Original     		100Vdc 10x12 10x16* 10x20* PDF

    Untitled

    Abstract: No abstract text available
    Text: Miniature Aluminum Electrolytic Capacitors NRE-FL Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • HIGH VOLTAGE 6.3 ~ 250V RoHS • LOW IMPEDANCE AT 100KHz Compliant includes all homogeneous materials • LONG LIFE AT HIGH TEMPERATURE (UP TO 10,000 HOURS)


    Original     		100KHz 250VDC 10etics 10x12 10x16* 10x20* PDF

    ilpi -115

    Abstract: 3 phase igbt firing circuit for ac servo motor Q9100
    Text: Make sure the next Card you purchase has. PWR-82331 AND PWR-82333 SMART POWER 3-PHASE MOTOR DRIVES FEATURES • Small Size 3.0" x 2.1" x 0.39" • +200 V and +500 V Capability • 30 A Current Capability • High-Efficiency MOSFET or IGBT Drive Stage


    Original     		PWR-82331 PWR-82333 PWR-82333 1-800-DDC-5757 AS9100C EN9100 Q9100 ilpi -115 3 phase igbt firing circuit for ac servo motor PDF

    O M 335

    Abstract: F2MC-16LX Absolute Assembly cm44-00201-1e 8342H F2MC-16LX MC-16LX adb 343 PS8713 MB90500-SERIES
    Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM44-00201-1E F2MC-16LX 16-BIT MICROCONTROLLER MB90500 Series PROGRAMMING MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90500 Series PROGRAMMING MANUAL FUJITSU LIMITED PREFACE Objectives and Intended Readership The MB90500 series products are developed as the F2MC-16LX series general-purpose


    Original     		CM44-00201-1E F2MC-16LX 16-BIT MB90500 F2MC-16LX O M 335 F2MC-16LX Absolute Assembly cm44-00201-1e 8342H MC-16LX adb 343 PS8713 MB90500-SERIES PDF