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    WC SOT23 Search Results

    WC SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    WC SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7002K

    Abstract: E5 marking sot23 6 wc sot23 marking EA SOT23 E2- marking h8 marking sot23 marking JB E5 Marking Marking E5 JA MARKING SOT23
    Text: SEMICONDUCTOR 2N7002K MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. WC 0 1 2. Marking 2 Item Marking Description Device Mark WC 2N7002K * Lot No. 01 Manufacturing date Year/Week Note) * Lot No. marking method * : Lot No. marking method


    Original     		PDF 2N7002K OT-23 2N7002K E5 marking sot23 6 wc sot23 marking EA SOT23 E2- marking h8 marking sot23 marking JB E5 Marking Marking E5 JA MARKING SOT23

    SOT23 JEDEC standard orientation

    Abstract: w3 sot23 D0 sot23 CBVK741B019 F63TNR MMSZ5221B SOT23-3L JEDEC standard
    Text: SOT-23 Std Tape and Reel Data SOT23-3L Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT23-3L parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


    Original     		PDF OT-23 OT23-3L 177cm 330cm SOT23 JEDEC standard orientation w3 sot23 D0 sot23 CBVK741B019 F63TNR MMSZ5221B SOT23-3L JEDEC standard

    5630 SOT23

    Abstract: FDN5630
    Text: FDN5630 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23


    Original     		PDF FDN5630 5630 SOT23 FDN5630

    5630 PKG

    Abstract: 5630 SOT23 marking code 10 sot23 FDN5630
    Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23


    Original     		PDF FDN5630 5630 PKG 5630 SOT23 marking code 10 sot23 FDN5630

    5630 PKG

    Abstract: FDN5630 sot23 footprint
    Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23


    Original     		PDF FDN5630 5630 PKG FDN5630 sot23 footprint

    MMBT2222A

    Abstract: PN2222A PZT2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBT2222A PZT2222A OT-23 OT-223 MMBT2222A PN2222A PZT2222A

    Code sot-23 on semiconductor

    Abstract: wc sot23 rd sot23
    Text: SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


    Original     		PDF OT-23 177cm 330cm Code sot-23 on semiconductor wc sot23 rd sot23

    BCR133

    Abstract: BCR133F BCR133L3 SEMH11
    Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching


    Original     		PDF BCR133. /SEMH11 BCR133/F/L3 BCR133T/W BCR133S/U SEMH11 EHA07184 EHA07174 BCR133 BCR133F BCR133 BCR133F BCR133L3 SEMH11

    Untitled

    Abstract: No abstract text available
    Text: Package Information SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate


    Original     		PDF OT-23 177cm 330cm OT-23

    Untitled

    Abstract: No abstract text available
    Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching


    Original     		PDF BCR133. /SEMH11 BCR133/F/L3 BCR133T/W BCR133S/U SEMH11 EHA07184 EHA07174 BCR133 BCR133F

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor

    smd j3y

    Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O


    Original     		PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd j3y SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6

    CBVK741B019

    Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original     		PDF MMBTA13 PZTA13 OT-23 OT-223 MPSA14 CBVK741B019 F63TNR MMBTA13 MPSA13 PN2222N PZTA13

    25c reference top mark sot23

    Abstract: sot23 A63
    Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MPSA63 MMBTA63 PZTA63 MPSA63 MMBTA63 OT-23 OT-223 MPSA64 25c reference top mark sot23 sot23 A63

    Untitled

    Abstract: No abstract text available
    Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching


    Original     		PDF BCR133. /SEMH11 BCR133/F/L3 BCR133T/W BCR133S/U SEMH11 EHA07184 EHA07174 BCR133 BCR133F

    Untitled

    Abstract: No abstract text available
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MPSA65 MMBTA65 PZTA65 MPSA65 MMBTA65 OT-23 OT-223 MPSA64

    FAIRCHILD SOT-23 MARK 1a

    Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


    Original     		PDF BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A FAIRCHILD SOT-23 MARK 1a BC846 SOT23 NPN sot23 mark NF 847C BC846 BC847 fAIRCHILD BC847b

    transistor bel 100

    Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBTA14 PZTA14 OT-23 OT-223 transistor bel 100 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    BEL 188 pnp TRANSISTOR characteristics

    Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
    Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA64 PZTA64 OT-23 OT-223 BEL 188 pnp TRANSISTOR characteristics bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N

    BEL 188 pnp TRANSISTOR characteristics

    Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
    Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA64 PZTA64 OT-23 OT-223 BEL 188 pnp TRANSISTOR characteristics bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF MMBTA92 PZTA92 OT-23 OT-223

    FAIRCHILD SOT-223 MARK

    Abstract: MMBTA28 PN2222N CBVK741B019 F63TNR MPSA28 PZTA28 npn transistor wc
    Text: MMBTA28 PZTA28 C C E E C B TO-92 SuperSOT-3 E C B B SOT-223 Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings*


    Original     		PDF MMBTA28 PZTA28 OT-223 FAIRCHILD SOT-223 MARK MMBTA28 PN2222N CBVK741B019 F63TNR MPSA28 PZTA28 npn transistor wc

    MPSA42

    Abstract: MPSA42 sot-223 CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 bsrxx
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


    Original     		PDF MMBTA42 PZTA42 OT-23 OT-223 MPSA42 MPSA42 sot-223 CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 bsrxx

    Untitled

    Abstract: No abstract text available
    Text: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/|iW at 915 MHz 30 mV/jiW at 2.45 GHz


    OCR Scan     		PDF OT-23/ OT-143 HSMS-285X HSMS-285X OT-23 OT143 DD127Ã 5963-2333E 5963-5030E