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    WF VQC 10 D A6 Search Results

    WF VQC 10 D A6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
    DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEV2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEO2V2P543M30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert UNC 4.40, Back: Metal Brackets. Visit Amphenol Communications Solutions

    WF VQC 10 D A6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1220AB/AD DALLAS SEMICONDUCTOR D S1220A B /A D 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 ' 24 1 Vcc • Data is automatically protected during power loss A6 • 23 1 A8 A5 1 3 22 1


    OCR Scan     		DS1220AB/AD S1220A 24-pin un297 DS1220AB/AD 24-PIN PDF

    1L43

    Abstract: wf vqc 10 d a6 MH 7420 MSM8128-8S
    Text: MOSAIC SEMICONDUCTOR INC S3E ]> Inoe L3S337T 0GG123D 234 128K x 8 SHAM molate MSM8128-85/10/12 Issue 3.0 : October 1992 Semiconductor f Pin Definition NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 AO DO D1 02 GNO 131,072 x 8 CMOS High Speed Static RAM Features Fast Access Times of 85/100/120 ns


    OCR Scan     		L3S337T 0GG123D MSM8128-85/10/12 10tiW MIL-STD-883 1L43 wf vqc 10 d a6 MH 7420 MSM8128-8S PDF

    Untitled

    Abstract: No abstract text available
    Text: MSC23B1321 D-xxBS2/DS2 98.11.9 OKI semiconductor MSC23B1321 D-xxBS2/DS2 1,048,576 Word By 32 Bit DYNAMIC RAM MODULE : FAST PAGE MODE GENERAL DESCRIPTION The Oki MSC23B1321 D-xxBS2/DS2 is a fully decoded, 1,048,576 word X 32 bit CMOS dynamic random access memory composed of two 16Mb(lMx16) DRAMs !n SOJ. The mounting of two DRAMs together


    OCR Scan     		MSC23B1321 lMx16) 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: CELESTICA 4M x 72 ECC FPM UNBUFFERED DIMM FEATURES • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: Proposed Ballot 744.1 : No. 95 MO-161 High performance, CMOS Single 5.0V ± 10% power supply TTL-compatible inputs and outputs


    OCR Scan     		168-pin MO-161 20432C) 14476C PDF

    EE40 core

    Abstract: schematic diagram cga to vga converter 464wp motorola optocoupler H7C4 WF VQE 11D uc3843a power source schematic BU508 TRANSISTOR equivalent cj TL431 transistor 277-CbRb
    Text: Order this document MOTOROLA by A N I080/D SEM ICO N D UCTO R APPLICATION NOTE AN1080 External-Sync Power Supply with Universal Input Voltage Range for Monitors By S.K. Tong and K.T. Cheng A B STR A CT This paper describes the design of a low-cost 90 W flyback switching power supply for a multi-sync color


    OCR Scan     		AN1080/D AN1080 08Q/D EE40 core schematic diagram cga to vga converter 464wp motorola optocoupler H7C4 WF VQE 11D uc3843a power source schematic BU508 TRANSISTOR equivalent cj TL431 transistor 277-CbRb PDF

    91000S-70

    Abstract: HYM91000S60
    Text: SIEMENS 1 M X 9-Bit Dynamic RAM Module HYM 91000S/-60/-70/-80 Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)


    OCR Scan     		91000S/-60/-70/-80 91000S-70 HYM91000S60 PDF

    Untitled

    Abstract: No abstract text available
    Text: MSC23832B-XXBS16/DS16 98.11.16 OKI semiconductor MSC23832B-xxBS16/DS16 8t388,608 Word x 32-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE_ GENERAL DESCRIPTION The Oki MSC23832B-xxBS16/DS16 is a fully decoded,8,388,608 word x 32 bit CMOS dynamic


    OCR Scan     		MSC23832B-XXBS16/DS16 8t388 32-Bit MSC23832B-xxBS16/DS16 72-pin MSC23832B-XXBS16 MSC23832B-xxDS16 PDF

    ADE-203-634C

    Abstract: No abstract text available
    Text: HM5116160 Series HM5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634C Z Rev, 3.0 Feb. 21, 1997 Description The Hitachi HM5116160 Series, HM 5118160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and low power. The


    OCR Scan     		HM5116160 HM5118160 1048576-word 16-bit ADE-203-634C 576-word 16-bit. 42-pin ADE-203-634C PDF

    Untitled

    Abstract: No abstract text available
    Text: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description The Hitachi HM5118160BI is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160BI offers


    OCR Scan     		HM5118160BI 1048576-word 16-bit ADE-203-580A 576-word 16-bit. ns/70 ns/80 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMS481000SLP 1MByte 1M x 8 CMOS DRAM Module {Low Profile) General Description Features The SMS481000SLP is a high performance, 1-megabyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIP(smgle-m-line pins) package. The module utilizes eight CMOS 1M x 1 dynamic RAMs


    OCR Scan     		SMS481000SLP 30-pin, 70/80/100ns 100ns) PDF

    91000S-60

    Abstract: siemens POWER SUPPLY KS 630 S 91000S-70 91000S-80 511000
    Text: S IE M E N S 1 M X 9-Bit Dynamic RAM Module HYM 91000S/-60/-70/-80 Advanced Information • 1 048 576 words by 9-bit organization • Fast access and cycle 60 ns access time 110 ns cycle time -60 70 ns access time 130 ns cycle time (-70 80 ns access time


    OCR Scan     		91000S/-60/-70/-80 E35bQ5 91000S-60 siemens POWER SUPPLY KS 630 S 91000S-70 91000S-80 511000 PDF

    xicor 2816A

    Abstract: BR2816A-250 rohm suffix "N"
    Text: itovim BR2816A 2K x 8 Bit Electrically Erasable PROM FEATURES • 2048 x 8 Bit 5V E2PROM ■ Single 5-Volt Supply ■ Fast Read Access Time: 250ns ■ TTL Level Byte Write: 10ms Max. ■ Internally Latched Address and Data in Write Cycle ■ Automatic Erase Before Write


    OCR Scan     		BR2816A 250ns BR2816AF DIP24 xicor 2816A BR2816A-250 rohm suffix "N" PDF

    MCM6288B

    Abstract: wf vqc 10 d a6 MCM6290BP25 MCM6290BP20 MCM6288B-25 U/25/20/TN26/15/850/MCM6290BP25
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6288B MCM6290B 16Kx4 Bit Static RAMs The MCM6288B and MCM6290B are 65,536 bit static random access memories organized as 16,384 words of 4 bits, fabricated using Motorola’s high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks


    OCR Scan     		MCM6288B MCM6290B 16Kx4 MCM6288B* MCM6290B MCM62868P20 MCM6286BP25 wf vqc 10 d a6 MCM6290BP25 MCM6290BP20 MCM6288B-25 U/25/20/TN26/15/850/MCM6290BP25 PDF

    bc6 csr

    Abstract: CSR BC6 wf vqc 10 d a6 LC32256 LC32256P
    Text: Ordering number : EN4700B CMOS LSI LC32256P-80 256 K 262144 words x 1 bit DRAM Fast Page Modem Overview The LC32256P is a CMOS dynamic RAM operating on a single 5 V power source and having a 262144 words x 1 bit configuration. Equipped with high speed and low


    OCR Scan     		EN4700B LC32256P-80 LC32256P 16-pin QG17b7t. LC32256P-80 0D17b77 bc6 csr CSR BC6 wf vqc 10 d a6 LC32256 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM6288 Series 1 6 3 8 4 -w o rd X 4-b it High Speed CMOS S tatic RAM The Hitachi H M 6288 is a high speed 64k static RAM organized as 16-kword x 4-bit. It realizes high speed access time 2 5 /3 5 /4 5 ns and low power consumption, employing CMOS process


    OCR Scan     		HM6288 16-kword 32-bit DP-22NB) PDF

    ALC100

    Abstract: ST CD C226 VM036 BK1606 COD-51 LS-120 WD62 L420 eef 1208 PA6 GF 10 MD10
    Text: D i a g r a m s M a in b o a r d G T LH W 3 b TLH A 6 T LH W S G TL H i« G T L H tf? GT L HA#6 \ U . tq : 02: I4 n : « ; K1 . ji ; s . m : G r. h i; » : pi . H . r ; E l, 0« . IB . 0) E2, IS . w . f t , ci 83 . A3 02, 2 1; Ai AS 84, C5 , g t lh w s


    OCR Scan     		0UF/16V ALC100 ST CD C226 VM036 BK1606 COD-51 LS-120 WD62 L420 eef 1208 PA6 GF 10 MD10 PDF

    MC27C512

    Abstract: NMC27C512AQ250 27C32 QM250 nmc27c512aq 27C128 27C16 27C256 27C64 EPROM NMC27C512AQ
    Text: p r e l im i n a r y NMC27C512A 524,288-Bit 64k x 8 UV Erasable CMOS PROM General Description Features The NMC27C512A is a high-speed 512k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimenta­


    OCR Scan     		NMC27C512A 288-Bit NMC27C512A 28-pin MC27C512 NMC27C512AQ250 27C32 QM250 nmc27c512aq 27C128 27C16 27C256 27C64 EPROM NMC27C512AQ PDF

    M38510

    Abstract: No abstract text available
    Text: REVISIONS DATE YR-MO-QA LTR DESCRIPTION A E d ito ria l changes throughout. Table I changes include: Vjh change, regrouped devices to d ifferen t lim its . Table I I , subgroups changed. Figures have been combined, some deleted. Quality Assurance and Quality conformance inspection paragraphs


    OCR Scan     		M38510/228XXBXX. 5SO-547 M38510 PDF

    Untitled

    Abstract: No abstract text available
    Text: •$ - M S M l- t t 5 6 V 1 6 4 0 0 2-B an k x 2,097,152-W ord x 4 -B it SYN CH RO N O U S DYN AM IC RAM DESCRIPTION The MSMS6V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and out puts are LVTTL Compatible.


    OCR Scan     		MSMS6V16400 152-word 4096cycles/64m$ PDF

    LC35645

    Abstract: lc3664* sanyo DIP28 LC3564S LC3564SS LC3564ST ST-70 3301P lc3664 564S
    Text: ig number: EN4794B □ LC3564S, SS, SM, ST-70/85/10 N0.4794B SAiYO i 6 4 K 8 1 9 2 w o r d s X 8 b it s S R A M Overview The LC3564S, LC3564SS, LC3564SMr and LC3564ST are asynchronous silicon gate CMOS static RAM s with an 8192-word X 8-bit organization. These SRAM s are full CMOS type


    OCR Scan     		EN4794B 4794B LC3564S, ST-70/85/10 8192words LC3564SS, LC3564SMr LC3564ST 8192-word LC35645 lc3664* sanyo DIP28 LC3564S LC3564SS ST-70 3301P lc3664 564S PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56UW473EJN Series, HB56UW465EJN Series 4.194.304-word x 72-bit High Density Dynamic RAM Module 4.194.304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-724A Z Rev.1.0 Feb. 20, 1997 Description The HB56UW473EJN, HB56UW465EJN belong to 8 Byte DIMM (Dual In-line Memory Module) family,


    OCR Scan     		HB56UW473EJN HB56UW465EJN 304-word 72-bit 64-bit ADE-203-724A HB56UW473EJN, Nippon capacitors PDF

    VEB mikroelektronik

    Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
    Text: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: A OS1743/DS1743P PRELIMINARY D S 1 7 4 3 /D S 1 7 4 3 P Y2KC Nonvolatile Timekeeping RAM PIN ASSIGNMENT • Integrated NV SRAM, real time dock, crystal, powertail control circuit and lithium energy source 28 VCC KC c 1 27 “1 WE A12 c 2 A7 c 3 26 □ CE2


    OCR Scan     		743/DS1743P DS1743P D8S034FCX PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16400 4 Meg x 4-Bit DYNAMIC RAM DESCRIPTION The MSM51V16400 is a 16 Megabit dynamic memory organized as 4,194,304 word by 4 bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology. The device operates at a single +3.3V power supply. All inputs and outputs are LVTTL


    OCR Scan     		MSM51V16400 MSM51V16400 16-Meg 400mil O-OKI-6388 PDF