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    WIDEBAND RF Search Results

    WIDEBAND RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    1812WBT2-2L Coilcraft Inc Wideband RF transformer, SMT, RoHS Visit Coilcraft Inc
    PWB1010- Coilcraft Inc Wideband RF transformer, SMT, RoHS Visit Coilcraft Inc
    PWB-1-BL Coilcraft Inc Wideband RF transformer, SMT, RoHS Visit Coilcraft Inc
    PWB-2-BL Coilcraft Inc Wideband RF transformer, SMT, RoHS Visit Coilcraft Inc
    PWB-4-AL Coilcraft Inc Wideband RF transformer, SMT, RoHS Visit Coilcraft Inc

    WIDEBAND RF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A113

    Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030MBR1 RK73H2ATD
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW5IC2030M/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station


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    MW5IC2030M/D MW5IC2030 MW5IC2030MBR1 MW5IC2030GMBR1 A113 AN1955 AN1987 MW5IC2030GMBR1 RK73H2ATD PDF

    BFQ67W

    Abstract: PMBT3640 PMBTH10 BFM520
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE


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    OT143 OT223 OT323 BFT25 BF747 BF547 BF547W BFS17 BFS17W BF689K BFQ67W PMBT3640 PMBTH10 BFM520 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RFHA1025 96GHz 215GHz DS120613 PDF

    A113

    Abstract: AN1987 MW4IC2020GMBR1 MW4IC2020MBR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station


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    MW4IC2020/D MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1 A113 AN1987 MW4IC2020GMBR1 PDF

    A113

    Abstract: AN1955 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station


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    MHVIC2114R2/D MHVIC2114R2 MHVIC2114R2 A113 AN1955 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT TAJA105K035R PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RFHA1025 RFHA1025 96GHz 215GHz DS120928 PDF

    PTMA080152M

    Abstract: VARIABLE RESISTOR 2K BCP56 RO4350
    Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband


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    PTMA080152M PTMA080152M 15-watt, 20-lead PG-DSO-20-63 50-ohm 10-ohm VARIABLE RESISTOR 2K BCP56 RO4350 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928 RF3928280W DS120508 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RFHA1025 RFHA1025 96GHz 215GHz DS120613 PDF

    ATC100B620

    Abstract: L22 amplifier Gan hemt transistor RFMD
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD PDF

    Untitled

    Abstract: No abstract text available
    Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband


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    PTMA080152M PTMA080152M 15-watt, 20-lead PG-DSO-20-63 50-ohm 10-ohm PDF

    hatching machine

    Abstract: 100B8R2CW A113 AN1987 MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base


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    MW4IC2230/D MW4IC2230 MW4IC2230MBR1 MW4IC2230GMBR1 hatching machine 100B8R2CW A113 AN1987 MW4IC2230GMBR1 TAJD106K035 PDF

    A113

    Abstract: AN1987 MHVIC2115R2
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHVIC2115R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2 The MHVIC2115R2 wideband integrated circuit is designed for base station


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    MHVIC2115R2/D MHVIC2115R2 MHVIC2115R2 A113 AN1987 PDF

    28F0181-1SR-10

    Abstract: CAPACITOR 150 RED
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928280W RF3928 RF3928 DS120508 28F0181-1SR-10 CAPACITOR 150 RED PDF

    Infineon moisture sensitive package

    Abstract: rj0c
    Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband


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    PTMA080152M PTMA080152M 15-watt, 20-lead PG-DSO-20-63 50-ohm 10-ohm Infineon moisture sensitive package rj0c PDF

    atc100a150

    Abstract: power transistor gan s-band
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B RF3928B DS120503 atc100a150 power transistor gan s-band PDF

    Untitled

    Abstract: No abstract text available
    Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the


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    PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B DS120503 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B RF3928B DS120503 PDF

    GaN hemt

    Abstract: power transistor gan s-band air surveillance system diagram using radar
    Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B DS130313 PDF

    100B120JP500X

    Abstract: 100B430JP500X 100B4R7CP500X AN1955 C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a


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    MW4IC001MR4/D MW4IC001MR4 MW4IC001MR4 100B120JP500X 100B430JP500X 100B4R7CP500X AN1955 C1210C104K5RACTR RO4350 T491X226K035AS PDF

    CD723

    Abstract: PCC104BCTND PCC104bct-nd PTMA210152
    Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the


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    PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63 CD723 PCC104BCTND PCC104bct-nd PTMA210152 PDF

    RF3928B

    Abstract: power transistor gan s-band RF392
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B RF3928B DS111208 power transistor gan s-band RF392 PDF