7400A
Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions
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Untitled
Abstract: No abstract text available
Text: ATC 113 SERIES TWIN/CAP SLCs G G L1 C1 C2 L1 T W L Equivalent Series Cap. = C1 = 2 C2 2 The top terminations of C1 and C2 make direct contact with the microstrip line conductors, eliminating the loss due to lead wire connections. ATC 113 SERIES TWIN/CAP® capacitors are designed for incremental tuning by selecting the appropriate pad connections to yield
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113BJ100K100TT
113DJ100K100TT
113BF150K100TT
113DJ150K100TT
113FJ150K100TT
113BGA220K100TT
113DF220M100TT
113FJ220M100TT
113BG330M100TT
113DF330M100TT
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BTS015
Abstract: IPC-2141A MT-094 Wire Microstrip Line stripline pcb Shielded Microstrip FR4 dielectric constant 4.6 Shielded Microstrip Line MECL handbook
Text: MT-094 TUTORIAL Microstrip and Stripline Design INTRODUCTION Much has been written about terminating PCB traces in their characteristic impedance, to avoid signal reflections. However, it may not be clear when transmission line techniques are appropriate.
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MT-094
BTS015
IPC-2141A
MT-094
Wire Microstrip Line
stripline pcb
Shielded Microstrip
FR4 dielectric constant 4.6
Shielded Microstrip Line
MECL handbook
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Untitled
Abstract: No abstract text available
Text: MTLP www.vishay.com Vishay Electro-Films Wire Bondable Thin Film Micro-Strip Transmission Line Resistor Arrays FEATURES • 50 micro-strip configuration • Wire bondable terminations • Alumina 99.6 % substrate; as-fired or polished APPLICATIONS • Test and measurement setups
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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MRF4070
Abstract: 15 w RF POWER TRANSISTOR NPN
Text: MOTOROLA SEM ICO N DUCTO R TECHNICAL DATA The RF Line 70 W 175 MHz CONTROLLED Q RF POWER TR A N SISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON . designed for 1 2.5 Volt VH F large-sign al am plifie r applications in industrial and com m ercial FM equipm ent operating to 1 7 5 M H z
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MRF4070
MRF4070
15 w RF POWER TRANSISTOR NPN
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Untitled
Abstract: No abstract text available
Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power TVansistor The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed as a low power driver with high gain and can be operated in Class A, B or C.
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TP5002S
100nF63V
1N4148
21/4W
BD136
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motorola AN211A
Abstract: 42256 planar transformer theory
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc
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MRF275G
MRF275G
motorola AN211A
42256
planar transformer theory
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6647a
Abstract: 2082-2700-00 560-7A50 attenuator 3dB DC 18GHz wiltron 6647A Microwave Generator SWR BRIDGE metal detector vlf HP-85
Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line
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ansi-y14.5m-1994
Abstract: 100B2R7CP500X CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 motorola 5118
Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100L N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF5S21100L/D
MRF5S21100L
MRF5S21100L
MRF5S21100LR3
MRF5S21100LSR3
ansi-y14.5m-1994
100B2R7CP500X
CDR33BX104AKWS
MRF5S21100LSR3
motorola 5118
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6647a
Abstract: uhf microwave fet 560-7A50 Logarithmic Amplifier detector 18GHz metal detector vlf 2082-2700-00 2082-2700 7082 coil gold detector decibel meter
Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3 Designed for W- CDMA base station applications with frequencies from 2110
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MRF5S21100L/D
MRF5S21100LR3
MRF5S21100LR3
MRF5S21100LSR3
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j130 fet
Abstract: MRF27SG
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND
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MRF275G
MRF275G
j130 fet
MRF27SG
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thuraya
Abstract: merrimac Hybrid Couplers
Text: MERRIMAC OFFERS A DESIGN CHOICE OF “LUMPED ELEMENT”, “MICRO-STRIP” OR “STRIP-LINE” TECHNOLOGY DESIGN CONSIDERATIONS AFFECTING RELIABILITY At Merrimac, three design techniques are used to produce the transmission characteristics of most of our signal
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110
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MRF5S21100H/D
MRF5S21100HR3
MRF5S21100HR3
MRF5S21100HSR3
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Transistor motorola 513
Abstract: TP5002S TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor
Text: MOTOROLA Order this document by TP5002S/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5002S The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed
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TP5002S/D
TP5002S
TP5002S
TP5002S/D*
Transistor motorola 513
TRANSISTOR ML1
MOTOROLA TRANSISTOR 726
MOTOROLA POWER TRANSISTOR
1N4148
BD136
motorola rf Power Transistor
uhf amplifier design Transistor
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100B2R7CP500X
Abstract: AN1955 MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line
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MRF5S21100L/D
MRF5S21100LR3
MRF5S21100LSR3
MRF5S21100HR3
MRF5S21100HSR3.
MRF5S21100LR3
MRF5S21100LSR3
100B2R7CP500X
AN1955
MRF5S21100HSR3
MRF5S21100L
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TP5002
Abstract: No abstract text available
Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA The RF Line U H F Linear P o w e r T ra n sisto rs 1.5 W — 380 to 512 MHz UHF LINEAR POW ER T R A N SIS T O R S N PN SILICO N T h e T P 5 0 0 2 / S a re N P N g o ld m e ta llize d t r a n s is t o r s u s in g d iff u s e d b a lla st r e s is t o r s for
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560-7A50
Abstract: 6647a Shielded Microstrip uhf microwave fet 2082-2700-00 7082 coil gold detector decibel meter Logarithmic Amplifier detector 18GHz series and parallel resonance
Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line
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AN1955
Abstract: CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3
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MRF5S21100L/D
MRF5S21100LR3
MRF5S21100LSR3
MRF5S21100LR3
AN1955
CDR33BX104AKWS
MRF5S21100L
MRF5S21100LSR3
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GX-0300 Arlon
Abstract: variable capacitor GX-300 MJD320 22 pf variable capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF282S MRF282Z RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
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IS22I
MRF282S
MRF282Z
GX-0300 Arlon
variable capacitor
GX-300
MJD320
22 pf variable capacitor
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transistor MWTA 06
Abstract: mwta 06
Text: MwT-17 500 MHz-12 GHz High Linearity GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM FEATURES • 1 WATT POWER OUTPUT WITH HIGH LINEARITY • HIGH ASSOCIATED GAIN • 0.8 MICRON REFRACTORY METAL/GOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON DLC PASSIVATION
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MwT-17
Hz-12
MwT-17
transistor MWTA 06
mwta 06
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MRF5S21090
Abstract: 100B1R2BP
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
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MRF5S21090L
MRF5S21090LR3
MRF5S21090LSR3
MRF5S21090
100B1R2BP
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GX-0300 Arlon
Abstract: MJD320 ATC 116
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
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MRF282S
MRF282Z
GX-0300 Arlon
MJD320
ATC 116
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planar transformer theory
Abstract: MRF275G equivalent "100 6W" MRF275G RF transformer turn ratio FERROXCUBE VK200 AN211A VK200 RF TOROIDS Design Considerations Nippon capacitors
Text: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz
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MRF275G/D
MRF275G
planar transformer theory
MRF275G equivalent
"100 6W"
MRF275G
RF transformer turn ratio
FERROXCUBE VK200
AN211A
VK200
RF TOROIDS Design Considerations
Nippon capacitors
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