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WRITE Result Highlights (5)

Part	Manufacturer	Description
74FCT162701ATPV8	Renesas Electronics Corporation	18 BIT READ/WRITE BUFFER
74FCT162701ATPF	Renesas Electronics Corporation	18 BIT READ/WRITE BUFFER
74FCT162701ATPF8	Renesas Electronics Corporation	18 BIT READ/WRITE BUFFER
FCT162701TU	Renesas Electronics Corporation	18 BIT READ/WRITE BUFFER
74FCT162701TPF8	Renesas Electronics Corporation	18 BIT READ/WRITE BUFFER

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Lumissil Microsystems OFF-LINE-WRITER-BOARD LUMISSIL MCU OFFLINE WRITER MODU
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DigiKey	OFF-LINE-WRITER-BOARD	Box	6		1	1 $76.88 10 $62.5 100 $62.5 1000 $62.5 10000 $62.5	Buy Now
Seiko Epson Corporation SG-WRITER-II-SG-8000-SERIES SG-WRITER II SG-8000 SERIES PROG
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DigiKey	SG-WRITER-II-SG-8000-SERIES	Box	2		1	1 $320.34 10 $320.34 100 $320.34 1000 $320.34 10000 $320.34	Buy Now
3M Interconnect 1420EZ-WRITER WRITER 1420EZ-STATION
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DigiKey	1420EZ-WRITER	Bulk			1	1 $5505.33 10 $5505.33 100 $5505.33 1000 $5505.33 10000 $5505.33	Buy Now
Newark	1420EZ-WRITER	Bulk			1	1 $6220.89 10 $5748.42 100 $5551.55 1000 $5551.55 10000 $5551.55	Buy Now
Seiko Epson Corporation SG-Writer-II Programmers - Universal & Memory Based SG-Writer II SG-8000 Series
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Mouser Electronics	SG-Writer-II		3			1 $316.21 10 $316.21 100 $316.21 1000 $316.21 10000 $316.21	Buy Now
Weidmüller Interface GmbH & Co. KG WRITE-ON Wo 127/25 Tp \|Weidmuller WRITE-ON
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Newark	WRITE-ON	Bulk			1	1 $25.71 10 $25.71 100 $21.17 1000 $20.45 10000 $20.45	Buy Now

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WRITE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UNITRODE Abstract: No abstract text available Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles	Original	bq4014/bq4014Y 32-pin 10-year 256Kx8 bq4014 152-bit UNITRODE	PDF
25CL64B-GA Abstract: 25CL64BGA 25cl64 FM25CL64B-Ga Text: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	FM25CL64B FM25CL64B MS-012 FM25CL64B, L3502G1, 25CL64BGA AL3502G1 RIC1104 25CL64B-GA 25cl64 FM25CL64B-Ga	PDF
MC14517 Abstract: 14517B Q32B Q32A Text: MC14517B Dual 64-Bit Static Shift Register The MC14517B dual 64−bit static shift register consists of two identical, independent, 64−bit registers. Each register has separate clock and write enable inputs, as well as outputs at bits 16, 32, 48, and 64. Data	Original	MC14517B 64-Bit 16-bit, 32-bit, 48-bit MC14517B/D MC14517 14517B Q32B Q32A	PDF
Untitled Abstract: No abstract text available Text: bq2204A X4 SRAM Nonvolatile Controller Unit General Description Features ä Power monitoring and switching for 3-volt battery-backup applications ä Write-protect control ä 2-input decoder for control of up to 4 banks of SRAM ä 3-volt primary cell inputs	Original	bq2204A	PDF
m1 250c fuse Abstract: at32uc3c em 234 stepper dtx 370 DTH block diagram lta 301 VT 546 Modem basic circuit diagram EIC 4021 shift registers 4050 Text: Features • High Performance, Low Power 32-bit AVR Microcontroller – – – – • • • • • • • • • • • • Compact Single-cycle RISC Instruction Set Including DSP Instruction Set Built-in Floating-Point Processing Unit FPU Read-Modify-Write Instructions and Atomic Bit Manipulation	Original	32-bit 9166D-AVR m1 250c fuse at32uc3c em 234 stepper dtx 370 DTH block diagram lta 301 VT 546 Modem basic circuit diagram EIC 4021 shift registers 4050	PDF
TIME PROCESSOR UNIT REFERENCE MANUAL Abstract: MK50DX256CLK10 Text: Freescale Semiconductor Data Sheet: Advance Information K50 Sub-Family Document Number: K50P81M100SF2V2 Rev. 1, 6/2012 K50P81M100SF2V2 Supports the following: MK50DX256CLK10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V	Original	K50P81M100SF2V2 K50P81M100SF2V2 MK50DX256CLK10 TIME PROCESSOR UNIT REFERENCE MANUAL MK50DX256CLK10	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: K51P100M72SF1 Rev. 2, 4/2012 K51P100M72SF1 K51 Sub-Family Supports: MK51DX256CLL7, MK51DX256CML7 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V	Original	K51P100M72SF1 K51P100M72SF1 MK51DX256CLL7, MK51DX256CML7 16-channel	PDF
ATMLH Abstract: AT34C02D-SSHM-T AT34C02D-CUM-T 34c02 Text: Atmel AT34C02D I2C-compatible 2-wire Serial EEPROM with Permanent and Reversible Software Write Protection 2K (256 x 8) DATASHEET Features  Permanent and reversible software write protection for the first-half of the array  Software procedure to verify write protect status	Original	AT34C02D 400kHz 16-byte ATMLH AT34C02D-SSHM-T AT34C02D-CUM-T 34c02	PDF
adwill Abstract: D176 Atmel part numbering ata5577 coil gold detector circuit diagram atmel rfid reader lf D-176 125KHz LF coil antenna for Automotive 125khz rfid reader analog lot id Text: Atmel ATA5575M1 Read/Write LF RFID IDIC 100kHz to 150kHz DATASHEET Features ● Contactless power supply ● Contactless read/write data transmission ● Radio frequency fRF from 100kHz to 150kHz ● 128-bit EEPROM user memory: 16Bytes 8Bits each ● 8-bit configuration memory	Original	ATA5575M1 100kHz 150kHz 128-bit 16Bytes RF/64) 40-bit 15-bit adwill D176 Atmel part numbering ata5577 coil gold detector circuit diagram atmel rfid reader lf D-176 125KHz LF coil antenna for Automotive 125khz rfid reader analog lot id	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Data Sheet: Advance Information K30 Sub-Family Document Number: K30P81M100SF2V2 Rev. 1, 6/2012 K30P81M100SF2V2 Supports the following: MK30DN512VLK10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V	Original	K30P81M100SF2V2 K30P81M100SF2V2 MK30DN512VLK10	PDF
i486 Abstract: No abstract text available Text: SN74BCT2141 2-WAY 8K x 18 SYNCHRONOUS CACHE DATA RAM D3613. A UG UST 1990 2-Way 8K x 18 Bit Architecture FN PACKAGE TOP VIEW Synchronous Read and Write Access at 50 MHz Clock Frequency Incorporates Burst Counter for Burst-Read (Read-Hit) Cycles or Burst-Write (Line-Fill)	OCR Scan	SN74BCT2141 D3613. I486TM DQ13s BCT2141 i4861 i486	PDF
NCC equivalent Abstract: No abstract text available Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors	OCR Scan	TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 8-Blf/262144 NCC equivalent	PDF
TD-172 Abstract: 3B3 diode TOLD9151MB Text: TOSHIBA VLD Technical Data TOLD9151MB Units in: mm • Small package high power index guided type M Q W InGaAlP V L D ■ Package flange: 05.6m m ■ Applications include: Read/write optical disk systems 5 .6 Surface ^ Pin Connection 0.03 4 .4 M A X 5 i	OCR Scan	OLD9151MB OLP9151MB_ -30mW TD172S2 0Qlb372 TD-172 3B3 diode TOLD9151MB	PDF
74170 Abstract: OF IC 74170 Text: TTL MSI TYPES SN54170, SN54LS170. SN74170, SN74LS170 4-BY-4 REGISTER FILES WITH OPEN-COLtECTOR OUTPUTS B U L L E T IN N O , D L -S 7 6 1 1 3 4 9 , M A R C H 1 9 7 4 — R E V IS E D O C T O B E R 1 9 7 6 • Separate Read/Write Addressing Permits Simultaneous Reading and Writing	OCR Scan	SN54170, SN54LS170. SN74170, SN74LS170 LS170 SN54LS670 SN74LS670 SN64LS170 74170 OF IC 74170	PDF

TIS152 Abstract: No abstract text available Text: TLS1521 THIN-FILM 6-CHANNEL READ/WRITE PREAMPLIFIER D3625, DECEM BER 1 990-R E V IS E D MARCH 1991 • Differential Input Capacitance . . . 35 pF Typ • Low Input Noise Voltage . . . 0.5 nV/VRz Typ FN PACKAGE TOP VIEW 9 z • o o <••> > y o 2 1 x	OCR Scan	TLS1521 D3625, 990-R 40/Ivv) TIS152	PDF
um611864 Abstract: No abstract text available Text: a S amar a a P R E L IM IN A R Y - UM611864 64K X 18 Bit Synchronous High Speed CMOS SRAM Features Single +5V power supply Fast access times: 9/11 ns Current: Operating: 275mA Standby: 95mA Synchronous self-timed write Individual byte write control Asynchronous output enable	OCR Scan	UM611864 275mA 52-pin UM611864 UM611864-11	PDF
E5550 temic Abstract: No abstract text available Text: Tem ic e5550 Semiconductors Standard Read/Write Identification IC Description The e5550 is a contactless R/W-IDentification IC IDIC * for general-purpose applications in the 125 kHz range. A single coil, connected to the chip, serves as the IC's power supply and bidirectional communication	OCR Scan	e5550 e5550 D-74025 17-Mar-98 E5550 temic	PDF
Untitled Abstract: No abstract text available Text: OJ bq4014/bq4014Y UNITRODE- 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection dur ing power-up/power-down cycles >• Industry-standard 32-pin 256K x 8 pinout >• Conventional SEAM operation; unlimited write cycles	OCR Scan	bq4014/bq4014Y 256Kx8 bq4014 152-bit 256Kx	PDF
Untitled Abstract: No abstract text available Text: CD 9 8 .5 0 IO 1 5 .0 0 O r-. Tu CIRCUIT WP WP O- GROUND 0— O D GROUND CD OWITHOUT CARD CARD INSERTED WRITE PROTECT : LOCK CARD INSERTED WRITE PROTECT UNLOCK PATTERN PROHIBITED AR TYCO LOGO & PART NUMBER & DATE CODE o cu _ o in "st- tj o q C L:— 0.58	OCR Scan	3Q-JAN-2Q04 30-JA -2004T.	PDF
Ks-7b Abstract: No abstract text available Text: TMS417800, TMS417800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 7 8 0 -D E C E M B E R 1992 x 8 DE P AC K A G E t DZ P A C K AG E t TOP VIEW (TOP VIEW) * Performance Ranges: vcc[ 1o D Q 0[ 2 ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE	OCR Scan	TMS417800, TMS417800P 417800/P-60 417800/P-70 417800/P-80 TMS417800 Ks-7b	PDF
UM61L3232AF-7 Abstract: UM61L3232A um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af Text: UM61L3232A Series PRELIMINARY 32K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 5/6/7/8 ns Single +3.3V+10% or +3.3V-5% power supply Synchronous burst function Individual Byte W rite control and Global Write	OCR Scan	UM61L3232A 100-pin 10jiA. UM61L3232AF-5 UM61L3232AE-5 UM61L3232AF-6 UM61L3232AE-6 UM61L3232AF-7 UM61L3232AE-7 um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af	PDF
00F1H Abstract: No abstract text available Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles	OCR Scan	MX29F1 100/120/150ns -100mA 100mA 100ns 00F1H	PDF
TRW J500 Abstract: k45752 52S marking Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and	OCR Scan	uPD42S4260L uPD424260L 16-BIT, fiPD42S4260L, 424260L PD42S4260L 44-pin 40-pin /jPD42S4260L-A70, 424260L-A70 TRW J500 k45752 52S marking	PDF
Untitled Abstract: No abstract text available Text: TLS2111, TLS21R11 THIN-FILM OR MIG 2- OR 4-CHANNEL LOW-NOISE READ/WRITE PREAMPLIFIERS D3879, A U G U S T 1991 DW PACKAGE TOP VIEW Low Equivalent Input Noise Voltage 0.65 nV/Vfiz Max [ HOX [ H0Y[ H1X [ H1Y[ H2X [ H2Y [ H3X [ H3Y [ 1 2 3 4 5 6 7 8 9 V C C 2[ 10	OCR Scan	TLS2111, TLS21R11 D3879, TLS2111	PDF

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WRITE Search Results

WRITE Result Highlights (5)

WRITE Price and Stock

Lumissil Microsystems OFF-LINE-WRITER-BOARD

Seiko Epson Corporation SG-WRITER-II-SG-8000-SERIES

3M Interconnect 1420EZ-WRITER

Seiko Epson Corporation SG-Writer-II

Weidmüller Interface GmbH & Co. KG WRITE-ON

WRITE Datasheets Context Search

UNITRODE

25CL64B-GA

MC14517

Untitled

m1 250c fuse

TIME PROCESSOR UNIT REFERENCE MANUAL

Untitled

ATMLH

adwill

Untitled

i486

NCC equivalent

TD-172

74170

TIS152

um611864

E5550 temic

Untitled

Untitled

Ks-7b

UM61L3232AF-7

00F1H

TRW J500

Untitled