24L32-W
Abstract: BR24L02-W 24L32W BR24L01A-W BR24L04-W BR24L08-W BR24L32 BR24L32-W 24L32
Text: Write cycle Arbitrary data is written to EEPROM. When to write only 1 byte, byte write is normally used, and when to write continuous data of 2 bytes or more, simultaneous write is possible by page write cycle. The maximum number of write bytes is specified
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BR24L32
L64-W)
BR24L01A-W
BR24L01A/02/04/08/16-W)
BR24L02-W,
24L32-W
BR24L02-W
24L32W
BR24L04-W
BR24L08-W
BR24L32-W
24L32
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CPF00
Abstract: i3 i5 i7 processor Y000 osc011
Text: REGISTER LEGEND Read/Write Read Only Write Only Read Special Behavior on Write Operation NOTE: ZERO MUST BE WRITTEN TO ALL UNUSED BITS ® Processor Control G CM 0R (0x 0A ) W G CM 1R (0x 0B ) W 0 = NORMAL SPREADING 1 = STRONG SPREADING 7 RESERVED MUST = 0
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28C16
Abstract: 28C16 atmel AT28C16 AT28C16-15T AT28C16-15TC AT28C16-15TI AT28C16-T
Text: AT28C16-T Features • • • • • • Ideal Rewriteable Attribute Memory Simple Write Operation Self-Timed Byte Writes On-chip Address and Data Latch for SRAM-like Write Operation Fast Write Cycle Time - 1 ms 5-Volt-Only Nonvolatile Writes End of Write Detection
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AT28C16-T
AT28C16-T
AT28C16-15TC
AT28C16-15TI
28C16
AT28C16
28C16 atmel
AT28C16
AT28C16-15T
AT28C16-15TC
AT28C16-15TI
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programmable read write transponder
Abstract: 134 kHz RFID glass transponder RI-TRP-RFOB-01 RI-TRP-WFOB-01 Transponder 134.2 khz hdx RI-TRP-RFOB RI-TRP-WFOB
Text: RADIO FREQUENCY IDENTIFICATION SYSTEMS Keyring Tag Read Only / Read Write Specifications: Part Number RI-TRP-RFOB-01 RI-TRP-WFOB-01 Functionality Read Only Read/Write Memory Bits 64 80 * Memory (Pages) 1 1 Operating Frequency 134.2 kHz Modulation FSK (Frequency Shift Keying) 134.2 kHz / 123.2 kHz
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RI-TRP-RFOB-01
RI-TRP-WFOB-01
programmable read write transponder
134 kHz RFID
glass transponder
RI-TRP-RFOB-01
RI-TRP-WFOB-01
Transponder 134.2 khz hdx
RI-TRP-RFOB
RI-TRP-WFOB
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PDF
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28C16 atmel
Abstract: at28c16 eeprom eeprom AT28C16 0258C
Text: Features • Ideal Rewritable Attribute Memory • Simple Write Operation • • • • – Self-Timed Byte Writes – On-chip Address and Data Latch for SRAM-like Write Operation – Fast Write Cycle Time - 1 ms – 5-Volt-Only Nonvolatile Writes End of Write Detection
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AT28C16-T
0258C
10/98/xM
28C16 atmel
at28c16 eeprom
eeprom AT28C16
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PDF
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TIRIS glass Transponder
Abstract: 134.2 kHz RFID tiris read only Security Transponder series 2000 reader system 134,2 kHz fsk texas instruments amplitude modulation RFID RFID reader 134.2 RI-TRP-WEHP
Text: Eco-Line 23mm Glass Transponder RI-TRP-REHP Read Only RI-TRP-WEHP (Read/Write) Reference Guide A TEXAS INSTRUMENTS TECHNOLOGY September 2006 SCBU034 Eco-Line 23mm Glass Transponder RI-TRP-REHP (Read Only) RI-TRP-WEHP (Read/Write) Reference Guide A TEXAS INSTRUMENTS TECHNOLOGY
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SCBU034
TIRIS glass Transponder
134.2 kHz RFID
tiris read only
Security Transponder
series 2000 reader system
134,2 kHz fsk
texas instruments amplitude modulation RFID
RFID reader 134.2
RI-TRP-WEHP
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PDF
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SSO056
Abstract: TSR048 AM29F010 MBit Product Selector Guide
Text: FLASH MEMORY PRODUCT SELECTOR GUIDE 3.0 Volt-only Simultaneous Read/Write 1.8 Volt-only Sector Erase 8 Mbit 16 Mbit 4 Mbit 8 Mbit 16 Mbit 32 Mbit Am29SL800C Am29SL160C Am29DL400B Am29DL800B Am29DL162C Am29DL163C Am29DL322C Am29DL323C 3.0 Volt-only Burst Mode
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Am29SL800C
Am29SL160C
Am29DL400B
Am29DL800B
Am29DL162C
Am29DL163C
Am29DL322C
Am29DL323C
Am29PL160C
Am30LV0064D
SSO056
TSR048
AM29F010
MBit
Product Selector Guide
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PDF
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Am29LV* 64 boot
Abstract: Flash Memory Product Selector Guide TSOP 44-40 Package FBC048 AM29DL323C AMD AM29F016B FGA04 pl 032 AM29F010 Product Selector Guide
Text: FLASH MEMORY PRODUCT SELECTOR GUIDE 3.0 Volt-only Simultaneous Read/Write 1.8 Volt-only Sector Erase 8 Mbit 16 Mbit 4 Mbit 8 Mbit 16 Mbit 32 Mbit Am29SL800C Am29SL160C Am29DL400B Am29DL800B Am29DL162C Am29DL163C Am29DL322C Am29DL323C 3.0 Volt-only Burst Mode
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Am29SL800C
Am29SL160C
Am29DL400B
Am29DL800B
Am29DL162C
Am29DL163C
Am29DL322C
Am29DL323C
Am29BL162C
Am30LV0064D
Am29LV* 64 boot
Flash Memory Product Selector Guide
TSOP 44-40 Package
FBC048
AMD AM29F016B
FGA04
pl 032
AM29F010
Product Selector Guide
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PDF
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M66281FP
Abstract: MITSUBISHI M
Text: MITSUBISHI <DIGITAL ASSP> M66281FP 5120 x 8-BIT x 2 LINE MEMORY When write reset input WRESB is set to "L", the write address counter of memory only for 1 line delay data is initialized. When read enable input REB is set to "L", the contents of memory only for 1 line delay data are output to data outputs Q00 to Q07
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M66281FP
M66281
M66281FP
MITSUBISHI M
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PDF
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AM29DL163CT
Abstract: D163CT90V D164C
Text: PRELIMINARY Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL16xC
16-Bit)
AM29DL163CT
D163CT90V
D164C
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29DL320G 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL320G
16-Bit)
256-byte
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PDF
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AM29DS320GB70
Abstract: AM29DS320GT70 FBD048-Fine-Pitch
Text: ADVANCE INFORMATION Am29DS320G 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DS320G
16-Bit)
048--Thin
AM29DS320GB70
AM29DS320GT70
FBD048-Fine-Pitch
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sung wei
Abstract: JST 150-10
Text: I LHF16BXX 1 LH28F160BGX-XXXX 16M-BIT 1024KB x16 2.4V-only FLASH MEMORY FEATURES V 2.4V-only Single Voltage Technology 2.4V -2.6 V Vccand Vpp Read/Write/Erase Operation: High Speed Products 2.4V-3.0V V ^ a n d Read/Write/Erase Operation: Standard Products
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LHF16BXX
LH28F160BGX-XXXX
16M-BIT
1024KB
32k-word
110ns
120ns
100ns
32KwMd
sung wei
JST 150-10
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Untitled
Abstract: No abstract text available
Text: AT28C16-T Features • • • • • • Ideal Rewriteable Attribute Memory Simple Write Operation Self-Timed Byte Writes On-chip Address and Data Latch for SRAM-like Write Operation Fast Write Cycle Time -1 ms 5-Volt-Only Nonvolatile Writes End of Write Detection
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AT28C16-T
10Standby
AT28C16-15TC
AT28C16-15TI
AT28C16-20TC
AT28C16-20TI
AT28C16-25TC
AT28C16-25TI
AT28C16
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28C16
Abstract: No abstract text available
Text: AT28C16-T Features • • • • • • Ideal Rewriteable Attribute Memory Simple Write Operation Self-Timed Byte Writes On-chip Address and Data Latch for SRAM-like Write Operation Fast Write Cycle Time -1 ms 5-Volt-Only Nonvolatile Writes End of Write Detection
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AT28C16-T
AT28C16-T
AT28C16-15TC
AT28C16-15TI
28C16
AT28C16
1G74177
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PDF
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AT28C16-15T
Abstract: AT28C16-T AT28C16-20tc
Text: AT28C16-T Features • • • • • • Ideal Rewriteable Attribute Memory Simple Write Operation Self-Timed Byte Writes On-chip Address and Data Latch for SRAM-like Write Operation Fast Write Cycle Time -1 ms 5-Volt-Only Nonvolatile Writes End of Write Detection
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AT28C16-T
AT28C16-15TC
AT28C16-15TI
AT28C16-20TC
AT28C16-20TI
AT28C16-25TC
AT28C16-25TI
AT28C16
AT28C16-15T
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PDF
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AT28C16-20TC
Abstract: AT28C16-20 AT28C16-15T AT28C16-T
Text: A T 28C 16-T Features • • • • • • Ideal Rewriteable Attribute Memory Simple Write Operation Self-Timed Byte Writes On-chip Address and Data Latch for SRAM-like Write Operation Fast Write Cycle Time -1 ms 5-Volt-Only Nonvolatile Writes End of Write Detection
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AT28C16-T
C16-T
AT28Ccial
AT28C16-15TI
AT28C16-20TC
AT28C16-20TI
AT28C16-25TC
AT28C16-25TI
AT28C16
AT28C16-20
AT28C16-15T
AT28C16-T
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AT28C16-15T
Abstract: AT28C16-T
Text: A T 28C 16-T Features • • • • • • Ideal Rewriteable Attribute Memory Simple Write Operation Self-Timed Byte Writes On-chip Address and Data Latch for SRAM-like Write Operation Fast Write Cycle Time -1 ms 5-Volt-Only Nonvolatile Writes End of Write Detection
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AT28C16-T
C16-T
AT28C16-15TI
AT28C16-20TC
AT28C16-20TI
AT28C16-25TC
AT28C16-25TI
AT28C16
AT28C16-15T
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AM29F010
Abstract: No abstract text available
Text: Am29LVxxx, 3.0 Volt-only Flash AMDB Device Bus Operations, Command Definitions, and Write Operation Status INTRODUCTION This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29LVxxx, 3.0 volt-only family of Flash
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Am29LVxxx
AM29F010
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PDF
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AM29F032B 04h
Abstract: 19945 AM29F010
Text: Am29Fxxx, 5.0 Volt-only Flash AMD* Device Bus Operations, Command Definitions, and Write Operations Status INTRODUCTION This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29Fxxx, 5.0 volt-only family of Flash
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Am29Fxxx
Am29F010A
Am29F100
AM29F032B 04h
19945
AM29F010
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PDF
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AM29LVXXX
Abstract: No abstract text available
Text: Am29LVxxx, 3.0 Volt-only Flash AMDJ1 Device Bus Operations, Command Definitions, and Write Operation Status INTRODUCTION DEVICE BUS OPERATIONS This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29LVxxx, 3.0 volt-only family of Flash
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Am29LVxxx
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Untitled
Abstract: No abstract text available
Text: Features • Ideal Rewritable Attribute Memory • Simple Write Operation - Self-Timed Byte Writes yflmËL - On-chip Address and Data Latch for SRAM-like W rite Operation - Fast Write Cycle Time - 1 ms - 5-Volt-Only Nonvolatile Writes • End of Write Detection
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AT28C16-T
AT28C16-T
0258C-10/98/xM
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220V DC output
Abstract: BR2864A-250 BR2864A-300 BR2864A-350 BR2864A-450 BR2864AF-250 DIP28
Text: BR2864A 8K x 8 Bit Electrically Erasable PROM FEATURES • Fast Read Access Time: 250ns ■ 5 Volt-Only Operation Including Write ■ Fast Nonvolatile Write Cycle: 10ms Max. - Automatic Write Timeout - Internally Latched Data - Internally Latched Address - Automatic Erase Before
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BR2864A
250ns
BR2864A
BR2864AF
DIP28pin
220V DC output
BR2864A-250
BR2864A-300
BR2864A-350
BR2864A-450
BR2864AF-250
DIP28
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PDF
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Untitled
Abstract: No abstract text available
Text: & 93C66 Microchip 4K CMOS Serial Electrically Erasable PROM DESCRIPTION FEATURES Low power CMOS technology ORG pin selectable memory organization Single 5 volts only operation Max clock at 2MHz Self-timed ERASE and WRITE cycles Automatic ERASE before WRITE
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93C66
93C66
DS11158F-page
93C66T
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