2SA1020GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SA1020GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * Power amplifier . FEATURE * HFE O :UT * HFE(Y):WT .019 (0.50) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85)
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2SA1020GP
OT-23
OT-23)
100mS*
2SA1020GP
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SA1020PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * Power amplifier . FEATURE * HFE O :UT * HFE(Y):WT .019 (0.50) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85)
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2SA1020PT
OT-23
OT-23)
100mS*
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Untitled
Abstract: No abstract text available
Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3.4 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V
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WT-2301
OT-23
OT-23
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WT3401
Abstract: WT-3401
Text: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V *Rugged and Reliable
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WT-3401
OT-23
OT-23
WT3401
WT-3401
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WT2307
Abstract: WT-2307
Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V *Rugged and Reliable
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WT-2307
OT-23
OT-23
WT2307
WT-2307
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Untitled
Abstract: No abstract text available
Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3.4 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V
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WT-2301
OT-23
OT-23
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2306 mosfet
Abstract: s1815 WT2306 WT-2306 wt2306s06 wt sot23
Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 2.8 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low R DS ON R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package
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WT-2306
OT-23
OT-23
2306 mosfet
s1815
WT2306
WT-2306
wt2306s06
wt sot23
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Untitled
Abstract: No abstract text available
Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V
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WT-2307
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 2.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V
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WT-2306
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V
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WT-3401
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 3.8AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V
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WT-2300
OT-23
OT-23
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WT3402
Abstract: WT-3402
Text: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 4.6 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V *Rugged and Reliable *SOT-23 Package
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WT-3402
OT-23
OT-23
WT3402
WT-3402
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Untitled
Abstract: No abstract text available
Text: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 30 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V
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WT-3401
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 3.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE 20 VOLTAGE *Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V
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WT-2300
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 2.8 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V
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WT-2306
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V
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WT-2307
OT-23
OT-23
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MOSFET 2301
Abstract: s01 sot-23 mosfet MOSFET 2301 SOT-23 sot 23 S01 2301 SOT-23 2301 marking sot-23 WT2301 WT-2301 s1815 2301 marking
Text: WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3.4 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS ON R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V R DS(ON) <105 m Ω@VGS =-1.8V
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WT-2301
OT-23
OT-23
MOSFET 2301
s01 sot-23 mosfet
MOSFET 2301 SOT-23
sot 23 S01
2301 SOT-23
2301 marking sot-23
WT2301
WT-2301
s1815
2301 marking
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Untitled
Abstract: No abstract text available
Text: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 4.6 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V *Rugged and Reliable
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WT-3402
OT-23
OT-23
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MOSFET N-Channel 1a vgs 0.9 sot-23
Abstract: WT2300 WT-2300 diode ja
Text: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 3.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE 20 VOLTAGE *Super high dense cell design for low RDS ON R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V R DS(ON) <75 mΩ @VGS =1.8V
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WT-2300
OT-23
OT-23
MOSFET N-Channel 1a vgs 0.9 sot-23
WT2300
WT-2300
diode ja
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Untitled
Abstract: No abstract text available
Text: 8W SOT-23-5 M5 TO-92 (Z) MSOP-8 MM-8 (MM) SO-8 (M) DIP-8 (N) SOT-223 (S) TO-263 (U) TO-220 (T) TO-247 (WT) Designing With LDO Regulators Micrel Semiconductor 9W 7W 6W 5W 4W 3W 2W 1W Designing With LDO Regulators 17 Section 2: Design Charts The minimum point on each line of Figure 2-3 shows package power dissipation capability using “worst
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O-247
O-220
O-263
OT-223
OT-23-5
OT-143
O-220
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Untitled
Abstract: No abstract text available
Text: Packing Details Pkg. Std. Pack Net Wt. Inner Carton Q ty /ln re r Outer Carton Box Size Carton Box Size No. of Inner Cartons per Outer Carton C apa city/ O uter Carton Gross Wt. 10 x 3.5" x 3.5" 5K 12.7" x 12.7" x 20 25 125K 25 kgs 3.75 kg/2500 pcs 10 :< 3.5" x 3.5"
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DO-35
DO-41
O-126
T0-220
OT-23
kg/5000
kg/2500
kg/100
gm/1000
gm/500
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SIEMENS BB409
Abstract: bb409
Text: SIEMENS AKTIENGESELLSCHAF bOE » • fi23SbOS 0051403 547 « S I E G SIEMENS 7 Dioden Diodes Varaktor- Tuner- Dioden Varactor (Tuning) Diodes Type Characteristics ( 7 a = 25°C) Cj at Vpj V pF Cj pF at VR V ^Ratio ca Maximum Ratings Wt h V mA Package Lead SMD/
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fi23SbOS
BB419
OD-123
BB409
BB439
OD-323
BB512
BB515
SIEMENS BB409
bb409
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EL215
Abstract: ic cir 2262 RTA 2258
Text: EL2150C/EL2157C 125 MHZ Siftglß Supply, Clamping Op A ffips HIGH PEBFORMAMCE ANÀtÛG WTÉSRATED CfflCUtîS G e n e r a l D e s c r ip t io n T he EL2150C/EL2157C are th e electronics in d u stry ’s fastest single supply op am ps available. P rio r single supply op am ps
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EL2150C/EL2157C
EL2157C)
75V/fxs
800e-18
810e-18
EL2150C
/EL2157C
EL215
ic cir 2262
RTA 2258
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Untitled
Abstract: No abstract text available
Text: o TO-247 WT o TO- in CO W) u P3 CIh SOT-22Ì (S) G o • 1-H P3 • l-H <Z) cn DIP-8 <N) <y SO-8 (M) o c - MSOP-8 M M -8 'MM i SOT-23-5 (M5) SOT-143 (M4) 00 CD LO CO 3 s X P3 TO-92 (Z) Gì S ro i <N £ •I Uh CM The minimum point on each line of Figure 2-3 shows package power dissipation capability using “worst
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O-247
OT-22Ì
OT-23-5
OT-143
O-220
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