WTC2302 Search Results

WTC2302 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
WTC2302		Weitron	N-Channel Enhancement Mode Power MOSFET		Original	PDF

WTC2302 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 2.3 AMPERES 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V Rugged and Reliable *Simple Drive Requirement	Original	WTC2302 OT-23 OT-23 24-Aug-09	PDF
Untitled Abstract: No abstract text available Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V Rugged and Reliable *Capable of 2.5V Gate Drive	Original	WTC2302 OT-23 OT-23 09-May-05	PDF
WTC2302 Abstract: No abstract text available Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V Rugged and Reliable *Capable of 2.5V Gate Drive	Original	WTC2302 OT-23 OT-23 09-May-05 WTC2302	PDF
WTC2302 Abstract: 2302 SOT-23 SOT-23 Marking 2302 Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90mΩ@VGS=4.5V Rugged and Reliable *Capable of 2.5V Gate Drive	Original	WTC2302 OT-23 OT-23 09-May-05 WTC2302 2302 SOT-23 SOT-23 Marking 2302	PDF
Untitled Abstract: No abstract text available Text: WTC2302A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V Rugged and Reliable *Capable of 2.5V Gate Drive	Original	WTC2302A SC-59 SC-59 09-May-05 26-Nov-08	PDF
WTC2302 Abstract: No abstract text available Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 2.3 AMPERES 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V Rugged and Reliable *Simple Drive Requirement	Original	WTC2302 OT-23 OT-23 250uA 24-Aug-09 WTC2302	PDF
WTC2302 Abstract: WTC2304 Text: WTC2304 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 2.7 AMPERS P b Lead Pb -Free DRAIN SOUCE VOLTAGE 25 VOLTAGE 1 GATE Features: 2 SOURCE 3 Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V Rugged and Reliable 1 2 SOT-23	Original	WTC2304 OT-23 OT-23 09-May-05 WTC2302 WTC2302 WTC2304	PDF