30349
Abstract: 136423
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R275, NE960R575 0.2/0.5 W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NE960R275 and NE960R575 are 0.2/0.5 W GaAs MESFETs designed for middle power transmitter applications for X, Ku-band microwave communication systems. It is capable of delivering 0.2/0.5 watt of output
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NE960R275,
NE960R575
NE960R275
NE960R575
NE960R275)
NE960R575)
30349
136423
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Nec K 872
Abstract: 102528 NEC 2905 139492 NEZ1414-2E T-78 NEZ1011-2E 72248 121-138 26433
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-2E,
NEZ1414-2E
NEZ1011-2E
NEZ1414-2E
NEZ1011-2E)
NEZ1414-2E)
Nec K 872
102528
NEC 2905
139492
T-78
72248
121-138
26433
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NEC1011-5E
Abstract: NEZ1011-5E NEZ1414-5E T-78
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-5E,
NEZ1414-5E
NEZ1011-5E
NEZ1414-5E
NEC1011-5E)
NEZ1414-5E)
NEC1011-5E
T-78
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NEZ1011-3E
Abstract: NEZ1414-3E T-78 1981 3E
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-3E,
NEZ1414-3E
NEZ1011-3E
NEZ1414-3E
NEZ1011-3E)
NEZ1414-3E)
T-78
1981 3E
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nec 258
Abstract: NEZ1011-8E NEZ1414-8E
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-8E,
NEZ1414-8E
NEZ1011-8E
NEZ1414-8E
nec 258
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92963
Abstract: 40198 NEZ1011-4E NEZ1414-4E T-78
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-4E,
NEZ1414-4E
NEZ1011-4E
NEZ1414-4E
NEZ1011-4E)
NEZ1414-4E)
92963
40198
T-78
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gaas fet micro-X Package marking
Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
Text: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES FETis designed for use in S to Ku band amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers
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MGF1451A
MGF1451A
13dBm
12GHz
gaas fet micro-X Package marking
gaas fet micro-X Package
gaas fet marking
gaas fet micro-X
micro-X ceramic Package
marking 133 micro-x
133 marking Micro-X
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WR75 waveguide
Abstract: waveguide WR-75 Celeritek, CTR ku vsat amplifier "ku band" amplifier CTR-145030 WR-75 CRT-145033
Text: PRELIMINARY Ku-Band VSAT Transmit ODU Model CTR-145030 Model CTR-145033 FEATURES ❏ Designed for Broadband Data/IP and Telephony ❏ World’s Smallest ODU • 8” l x 3.4” (w) x 2.7” (h), 2.3 lbs. • Highly Efficient Thermal Transfer ❏ 14.0 to 14.5 GHz (Ku-Band) Frequency
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CTR-145030
CTR-145033
WR-75
WR75 waveguide
waveguide WR-75
Celeritek, CTR
ku vsat amplifier
"ku band" amplifier
CTR-145030
CRT-145033
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK39V4045
MGFK39V4045
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFX39V0717 10.7 – 11.7 GHz BAND / 8W DESCRIPTION The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFX39V0717
MGFX39V0717
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK25V4045
MGFK25V4045
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK30V4045
MGFK30V4045
350mA
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK35V4045
MGFK35V4045
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35W amplifiers
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK35V4045
MGFK35V4045
35W amplifiers
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MGFX39V0717
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFX39V0717 10.7 – 11.7 GHz BAND / 8W DESCRIPTION The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFX39V0717
MGFX39V0717
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFX36V0717 10.7 – 11.7 GHz BAND / 4W DESCRIPTION The MGFX36V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFX36V0717
MGFX36V0717
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62095
Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are.power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal'input and output matching enables guaranteed performance to be achieved with
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NEZ1011-8E,
NEZ1414-8E
NEZ1011-8E
NEZ1414-8E
62095
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-8E,
NEZ1414-8E
NEZ1011-8E
NEZ1414-8E
OutputI773
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99419
Abstract: No abstract text available
Text: _ DATA SHEET_ _ N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ101.1-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-4E,
NEZ1414-4E
NEZ101
NEZ1414-4E
NEZ1011-4E)
NEZ1414-4E)
99419
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-5E,
NEZ1414-5E
NEZ1011-5E
NEZ1414-5E
NEC1011-5E)
NEZ1414-5E)
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-3E,
NEZ1414-3E
NEZ1011-3E
NEZ1414-3E
NEZ1011-3E)
NEZ1414-3E)
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-2E,
NEZ1414-2E
NEZ1011-2E
NEZ1414-2E
NEZ1011-2E)
NEZ1414-2E)
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-4E,
NEZ1414-4E
NEZ1011-4E
NEZ1414-4E
NEZ1011-4E)
NEZ1414-4E)
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NEC 2933
Abstract: 2912 nec NEC 2705 72248 NEC 2705 L 107
Text: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high . output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-2E,
NEZ1414-2E
NEZ1011-2E
NEZ1414-2E
NEZ1011-2E)
NEZ1414-2E)
NEC 2933
2912 nec
NEC 2705
72248
NEC 2705 L 107
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