TMS200
Abstract: No abstract text available
Text: Model www.teltron.com TMS200 X-Band Motion Sensor Applications Features TMS200 is X-band Doppler motion sensor to detect motion. It consists of DR dielectric resonator oscillator, passive diode and patch antennas and provides most reliable solution in motion
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TMS200
TMS200
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TMS100
Abstract: No abstract text available
Text: Model www.teltron.com TMS100 X-Band Motion Sensor Applications Features TMS100 is X-band Doppler motion sensor to detect motion. It consists of DR dielectric resonator oscillator, passive diode and patch antennas and provides most reliable solution in motion
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TMS100
TMS100
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TMS400
Abstract: No abstract text available
Text: Model www.teltron.com TMS400 X-Band Motion Sensor Applications Features TMS400 is X-band Doppler motion sensor to detect motion. It consists of DR dielectric resonator oscillator, passive diode and patch antennas and provides most reliable solution in motion
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TMS400
TMS400
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TMS300
Abstract: No abstract text available
Text: Model www.teltron.com TMS300 X-Band Motion Sensor Applications Features TMS300 is X-band Doppler motion sensor to detect motion. It consists of DR dielectric resonator oscillator, passive diode and patch antennas and provides most reliable solution in motion
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TMS300
TMS300
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TL393
Abstract: X-band TR Limiter TL393 tr limiter x-band limiter Jrc 1000 Radar x-band limiter diode power Diode 30kw x-band diode x-band power TR
Text: TL393 X-Band TR Limiter TL393 is a broad band primerless TR Limiter designed specifically for use with X-band radars. Consisting of a TR tube and the two stage diode limiter, TL393 is a small, rugged device which protects the mixer diode in the receiver from burning out as a result of RF power coming from
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TL393
TL393
25deg.
X-band TR Limiter TL393
tr limiter
x-band limiter
Jrc 1000 Radar
x-band limiter diode
power Diode 30kw
x-band diode
x-band power TR
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1N831
Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes
Text: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and
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1N831
1N831A
1N831B
1N831C
1N832
1N832A
1N832B
1N832C
1N831
1N832A
"Point Contact Diodes"
Silicon Point Contact Mixer Diodes
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Arrayed Waveguide Grating
Abstract: PT100 resistor GR-1221-CORE PT100 RTD signal conditioning rtd pt100 datasheet pt100 temp Power Line Communications
Text: V23846-Pwxyz * 40 Channel Smart DEMUX with Integrated Power Monitor Preliminary Dimensions in mm 156 182.04 2.54 50 11 7.35 25.40 45.14 Types of Components MUX DEMUX-LL DEMUX-FT C-Band (first channel 192.0 THz) X X L-Band (first channel 186.7 THz) X X * Ordering Information
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V23846-Pwxyz(
D-13623,
Arrayed Waveguide Grating
PT100 resistor
GR-1221-CORE
PT100 RTD signal conditioning
rtd pt100 datasheet
pt100 temp
Power Line Communications
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LG diode 831
Abstract: MA4E2054-287T
Text: Surface Mount Low Barrier X-Band Schottky Diode MA4E2054 Series MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diodes Package Outlines Features • • • • • • • • • Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer
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MA4E2054
100nA
500nA
OT-23
OT-143
OT-323
OD-323
LG diode 831
MA4E2054-287T
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S11 SCHOTTKY diode
Abstract: MA4E2054B-287T MA4E2054-1141T MA4E2054 MA4E2054A-1146T MA4E2054A-287T MA4E2054B MA4E2054E-1068T MA4E2054D-287 Surface Mount RF Schottky Barrier Diodes
Text: MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diode Features • • • • • • • • • Package Outlines Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB (SSB) at X-Band
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MA4E2054
100nA
500nA
OT-23
OT-143
OT-323
OD-323
S11 SCHOTTKY diode
MA4E2054B-287T
MA4E2054-1141T
MA4E2054A-1146T
MA4E2054A-287T
MA4E2054B
MA4E2054E-1068T
MA4E2054D-287
Surface Mount RF Schottky Barrier Diodes
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MA4E1245KE
Abstract: MA4E1245KA MA4E1245KB 350AT S11 SCHOTTKY diode 20/Molectron Detector J100 MA4E1245 transistor schottky model spice microwave diode
Text: Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features ● ● ● ● ● ● ● Designed for High Volume Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB SSB at X-Band High Detector Sensitivity: -55 dBm TSS
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MA4E1245
OT-23
-j100
MA4E1245KE
MA4E1245KA
MA4E1245KB
350AT
S11 SCHOTTKY diode
20/Molectron Detector J100
transistor schottky model spice
microwave diode
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MIL-STD-1686C
Abstract: 24GHZ AN0017
Text: CHV2411aQDG RoHS COMPLIANT Fully Integrated HBT K-band VCO GaAs Monolithic Microwave IC In QFN package Description The CHV2411a-QDG is a monolithic multifunction for frequency generation. It integrates a X-band “push-push” oscillator with frequency control VCO thanks to basecollector diodes, used as varactors, a K-band
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CHV2411aQDG
CHV2411a-QDG
DSCHV2411aQDG7254
MIL-STD-1686C
24GHZ
AN0017
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24GHZ
Abstract: AN0017
Text: CHV2411aQDG RoHS COMPLIANT Fully Integrated HBT K-band VCO GaAs Monolithic Microwave IC In QFN package Description The CHV2411a-QDG is a monolithic multifunction for frequency generation. It integrates a X-band “push-push” oscillator with frequency control VCO thanks to basecollector diodes, used as varactors, a K-band
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CHV2411aQDG
CHV2411a-QDG
DSCHV2411aQDG7254
24GHZ
AN0017
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x-band mmic core chip
Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
Text: A GaAs X-Band Multifunction Control MMIC Using the MSAG Process Abstract This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase shifter, multi-bit attenuator, amplifier and serial-to-parallel
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DOPPLER 10.525
Abstract: NJR4178J Doppler Sensor motion sensor doppler NJR4178 x-band dro DOPPLER 10.525 ghz motion DOPPLER microwave doppler sensor microwave motion sensor
Text: X-band Doppler Sensor Module MODEL NO. NJR4175 / 76 / 77 / 78 / 81 / 78J <Description> This specification covers the general requirements for X-band microwave Doppler module. This module is designed for motion sensing applications. It consists of DRO Dielectric Resonator Oscillator , balanced
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NJR4175
NJR4175
NJR4176
NJR4177
NJR4178
NJR4181
NJR4178J
JR4176
NJR4178J]
NJR4175]
DOPPLER 10.525
NJR4178J
Doppler Sensor
motion sensor doppler
NJR4178
x-band dro
DOPPLER 10.525 ghz
motion DOPPLER
microwave doppler sensor
microwave motion sensor
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KA band detector
Abstract: AMP3001 AMP-90 AMM9002 AMH9001 AMP9001
Text: SCHOTTKY BARRIER MIXER DIODES LOW BARRIER NTYPE FREQUENCY BAND TYPE NUMBER S S S X X X X Km Km Km Ka K. K. Ka Ka AML3001 AML3002 AML3003 AML9001 AML9002 AML9003 AML9004 AML1601 AML1602 AML1603 AML1604 AML3S01 AML3502 AML3503 AML3504 AML3505 FREQUENCY BAND
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AML3001
AML3002
AML3003
AML9001
AML9002
AML9003
AML9004
AML1601
AML1602
AML1603
KA band detector
AMP3001
AMP-90
AMM9002
AMH9001
AMP9001
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x-band limiter
Abstract: 1B63A tr limiter 9x64 x-band power TR
Text: 00- 2- 2 ; 18 : 01 4/ ¡0492781419 ft T o g a t a ) JRC TL368C X-Band TR L 'v5 ' G E N E R A L DESCRIPTION TL368C is a broad band primerless T R Limiter designed specifically for use with X-band radars. Consisting o f a T R tube and a diode limiter, TL368C is a small, rugged device which protects the
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TL368C
1B63A,
x-band limiter
1B63A
tr limiter
9x64
x-band power TR
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15S2
Abstract: K1007
Text: MICROWAVE MIXER DIODE I48CAY/A Dev. No. DEVELOPMENT SAMPLE DATA Schottky b a rrie r low noise m ixer diode mounted in a L .I.D . type envelope prim arily intended for hybrid integrated circuit applications at X band. QUICK REFERENCE DATA Typical noise figure at X band
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I48CAY/A
148CAY/Ais
K1007
375GHz,
45MHz
K1007,
45MHz.
148CAY/A
15S2
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ma4e12
Abstract: No abstract text available
Text: an A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features • Designed for High Volume Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB SSB at X-Band • High Detector Sensitivity: -55 dBm TSS
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MA4E1245
OT-23
ma4e12
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sot 14L
Abstract: sot-23 ma4
Text: V an A M P com pany < Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low IR <100nA @ IV, <500nA @ 3 V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band
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100nA
500nA
MA4E2054
MA4E2054A-287T
MA4E2054C-287T
sot 14L
sot-23 ma4
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1N23 diode
Abstract: 1N23 K1007 1N23 Diode Holder 1n23 jan noise diode
Text: MICROWAVE MIXER DIODE I48CAY/B Dev. No. DEVELOPMENT SAMPLE DATA Schottky b a rrie r low noise m ixer diode for use at X band. The 148CAY/B is interchangeable with the 1N23 s e r ie s . QUICK REFERENCE DATA Typical noise figure at X band 6.5 Frequency range
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I48CAY/B
148CAY/B
375GHz,
45MHz
K1007,
45MHz.
JAN-106holder,
1N23 diode
1N23
K1007
1N23 Diode Holder
1n23 jan
noise diode
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diode L44
Abstract: Surface Mount RF Schottky Barrier Diodes
Text: r M a n A M P ic om pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low I R clOOnA @ IV, <500nA @ 3Y • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band
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500nA
MA4E2054
MA4E2054A-287T
MA4E2054C-287T
diode L44
Surface Mount RF Schottky Barrier Diodes
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Untitled
Abstract: No abstract text available
Text: b3E D • fc.b53331 003bl73 373 H A P X rnm ps Product specification Silicon planar diode DESCRIPTION The BA582 is a silicon planar high performance band switching diode, intended for low loss band switching
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b53331
003bl73
BA582
BA582
100MHz
002bl7S
OD123.
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MA4E1245
Abstract: S11 SCHOTTKY diode
Text: M MôM m an A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features • D esigned for High Volume Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB SSB at X-Band • High Detector Sensitivity: -55 dBm TSS
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MA4E1245
OT-23
S11 SCHOTTKY diode
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EL36
Abstract: ND5052-3G
Text: X TO K*BAND GaAs SCHOTTKY BARRIER MIXER DIODE FEATURES OUTLINE DIMENSIONS Untutnmm • X BAND MIXgR DIODE OUTLINE 3 6 • LOW NOISE GaAs SCHOTTKY DIODE NF = 5 dB TYP at I » 10 GHz • LOW TERMINAL CAPACITANCE C i =* 0.3 pF MAX at 1 M Hi • SMALL SIZE • LOW COST
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ND5052-3G
ND5052-3G
EL36
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