Untitled
Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC7056 v01.1214 Ka-Band Block Upconverter With HPA Typical Applications Block Upconverters / HPA's
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HMC7056
HMC7056
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E4432B
Abstract: male connector pin PD28-192A-50-15CDPA HPA C band
Text: 1860 Hartog Dr San Jose, CA 95131 Ph: 510-436-7723 Fax: 510-436-7698 www.premierdevices.com [email protected] MODEL PD28-192A-50-15CDPA PCS BAND POWER AMPLIFIER 15 WATTS CDMA • • • • • FEATURES High reliability High efficiency state-of-the-art LDMOS design
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PD28-192A-50-15CDPA
PDC-192A-50-15CDPA
C-100
E4432B
male connector pin
PD28-192A-50-15CDPA
HPA C band
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Untitled
Abstract: No abstract text available
Text: MMICs, RFICs, Integrated system solution Microwave & Millimeter wave product Line = VectraWave is a solution provider for integrated electronic in high frequency, microwaves and optoelectronic for telecommunications and
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30Gbps
30GHz
16X16
12GHz
24X18
40Ghz
43GHz/21
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MD0550
Abstract: GPZY1010AU0F M/358 co2
Text: AMPASE – a Management Platform for Advanced Wireless Sensoring GENERAL DESCRIPTION MAIN FEATURES AMPASE is a complete solution for wireless environment monitoring including an extensive set of supported sensors, communication hardware as well as management and data handling software.
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LNA x-band
Abstract: No abstract text available
Text: product announcement 3.6 Meter Earth Station Antennas C-, X-, or Ku-Band Capabilities Now communications system integrators and designers can bring their systems on line faster, more economically, and with superior performance with the Andrew 3.6 M earth station antenna.
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SP50277-36
153rd
10732B
LNA x-band
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EI Meter Type M
Abstract: No abstract text available
Text: 4.5-Meter C-, X- or Ku-Band Features: High Gain, Excellent Pattern Characteristics • Main Reflector - No Special Field Alignment • 3- Year Warranty on All Structural Components • MPJ Versions Supplied with 20,000 Pound Jacks for Both Az and El Axis •
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MTG-2000
Abstract: Signal Generators signal amplifier 800 mhz cdma
Text: PRODUCT FEATURE MULTITONE SIGNAL GENERATORS FOR CELLULAR AND PCS HPA EVALUATION T oday’s multicarrier wireless communications systems require sophisticated test equipment to analyze and verify performance levels. Spread spectrum systems are prone to generating intermodulation products
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MTG-2000
Signal Generators
signal amplifier 800 mhz cdma
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ES-37
Abstract: No abstract text available
Text: product specifications 3.7 Meter Dual-Reflector Earth Station Antennas C-, X-, or Ku/K-Band Capabilities Now communications system integrators and designers can bring their systems on line faster, more economically, and with superior performance with the Andrew
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153rd
10244D
ES-37
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IA021A00
Abstract: No abstract text available
Text: product specifications 4.6 Meter Dual-Reflector Earth Station Antennas C-, X-, or Ku-Band Capabilities Now communications system integrators and designers can bring their systems on line faster, more economically, and with superior performance with the Andrew
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153rd
10245C
IA021A00
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Untitled
Abstract: No abstract text available
Text: product specifications 4.5 Meter Earth Station Antennas C-, X-, or Ku-Band Capabilities Now communications system integrators and designers can bring their systems on line faster, more economically, and with superior performance with the Andrew 4.5 M earth station antenna.
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153rd
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ES76
Abstract: No abstract text available
Text: P r o d u c t S p e c i f i c a t i o n C-, X-, Ku-, or K-Band Capabilities 7.6 Meter Dual-Reflector Earth Station Antennas T elevision broadcasters and telecommunications system operators, integrators and designers can bring their systems on line faster, more economically, and with superior
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5082-2350
Abstract: hp 2817 hpa 2350 5082-2817 5082-2200 diode hp 5082-2817
Text: Wlf^k HEWLETT 4447SÔH GGOTtiHb SB6 ^BHPA HEULETT-PACKAR] / CMPNTS D b lE PACKARD Schottky Barrier Diodes for Mixers and Detectors Technical Data 5082-2350/51 5082-2400/01 5082-2702/07 5082-2723/24 5082-2817/18 D IA M E T E R 1 63 064) 1 6 2 ( 060) Features
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4447S
5082-2350
hp 2817
hpa 2350
5082-2817
5082-2200
diode hp 5082-2817
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Untitled
Abstract: No abstract text available
Text: 新製品紹介 3.5GHz 帯 WiMAX/TD-LTE 対応フロントエンドモジュール Front-End Module for 3.5GHz Band WiMAX/TD-LTE Front-end module ：LSHX-65EHB-DD3 日立金属は，次世代通信方式モ 要とされる高周波増幅器（HPA） ，低
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LSHX-65EHB-DD3
LSHX-65EHBDD3ï
LSHX-65EHB-DD3)
band42ï
band43ï
23dBm
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x-band power transistor
Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM, a Tyco Electronics Company Introduction After more than 20 years of DoD technology development, the exploding
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Untitled
Abstract: No abstract text available
Text: CDM-625 Advanced Satellite Modem Satellite Modems Typical Users Overview The CDM-625 Advanced Satellite Modem builds on our legacy of providing the most efficient satellite modems. It was our first modem to combine advanced Forward Error Correction FEC such as VersaFEC and Low
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CDM-625
EN60950
ds-CDM-625
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72km
Abstract: LNB ka band andrew 4.9 Meter ESA
Text: 5.6-Meter Ku-, K- or Ka-Band Features: ¿S J High Gain, Excellent Pattern Characteristics £2 Advanced Gregorian Optics Self-Aligning Main Reflector— No Field Alignment " to Deep Equipment Enclosure Ù O 3-Year Warranty on All Structural Components Com pliances:
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high power fet amplifier schematic
Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Text: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers HPAs to demanding
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30FETs
20FETs
12-Watt
high power fet amplifier schematic
GaAs MESFET amplifier
fet amplifier schematic
x-band mmic core chip
MMIC X-band amplifier
x-band microwave fet
HPA Ku
x-band core chip
"high power microwave"
fet small signal
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Untitled
Abstract: No abstract text available
Text: Advance Product Inform ation 27- 32 GHz 1.5 Watt Power Amplifier TGA1082B Prototype Part #, Production Part # TBD Key Features 0.25 um pHEMT Technology 22 dB Nominal Gain at 30GHz 1W Nominal Pout @ P1dB 1.5W Psat at 30GHz Bias 6 - 7V @ 960 mA Chip Dimensions 4.13mm x 3.3mm
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TGA1082B
30GHz
A1082B-EPU
TGA1082B
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TriQuint
Abstract: mode 5 IFF
Text: Advance Product Information 27- 32 GHz 1.5 Watt Power Amplifier TGA1082B Prototype Part #, Production Part # TBD Key Features • • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain at 30GHz 1W Nominal Pout @ P1dB 1.5W Psat at 30GHz Bias 6 - 7V @ 960 mA
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TGA1082B
30GHz
TGA1082B
27-32GHz.
30GHz.
TGA1082B-EPU
1000pF
TriQuint
mode 5 IFF
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ic 5082
Abstract: TC 5082 P 5082-275 5082-2824 2824I
Text: HEWLETT-PACKARD/ CMPNTS blE D • 44475ÖM ODOTbSS 881 «HPA W h a t HEWLETT IL 'ttM PACKARD S ch ottk y B arrier D iod es for D etectors Technical Data 5082-2750/51 5082-2755 5082-2787 5082-2824 Features • Improved D etection Sensitivity TSS of -55 dBm a t 10 GHz
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44475A4
ic 5082
TC 5082 P
5082-275
5082-2824
2824I
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Untitled
Abstract: No abstract text available
Text: WIRELESS TECHNOLOGIES Measuring VSWR and Gain in Wireless Systems EAMON NASH Analog Devices, Wilmington, MA easurement and control of gain and reflected power in wireless transmitters are critical auxiliary functions that are often overlooked. The power reflected back from an antenna is specified using either the voltage standing
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Abstract: No abstract text available
Text: WFlüL£TÎ-pA<:l<AR1>/ CMPNTS blE • 44475Û4 GOO^SS W hpl HEWLETT 1 :7 1 1 PACKARD 7b2 Glass Packaged Step R ecovery Diodes soiioìsf 3/14 Technical Data 5082-0153 5082-0180 5082-0833 5082-0840 Features • Optimized for Both Low and High Order Multiplier
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1722B
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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