Untitled
Abstract: No abstract text available
Text: X-BAND CAPACITORS MORE RF POWER MORE BANDWIDTH MORE CAPACITANCE Catalog 8100 X-BAND CAPACITORS PRESIDIO ADVANTAGE KEY FEATURES ✦ ✦ ✦ ✦ Transmission loss S21 about -0.2 dB up to X-Band 18 pF standard in 0402 footprint 33 pF standard in 0603 footprint
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MXB0402P180K3T1Câ
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if mixer
Abstract: No abstract text available
Text: CONVERTER ASSEMBLIES S-BAND TO X-, Ku-BAND UPCONVERTER MODULE r SPECIFICATIONS IF input frequency 2 -4 GHz L0 input frequency 10 .12 and 14 GHz RF output frequency IF mixer "1 absorptive switch X-bard I O selector S-band IF input power divide^ X-band, Ku-band
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10-to-IF
55GHz
if mixer
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AM7808CLT
Abstract: No abstract text available
Text: AM7808 AM7808HighEfficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module High-Efficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module Package: LGA, 5.25mm x 5.30mm x 0.80mm RX1 TM AdaptiveRF HB_IN Features ANT Extended Power Added Efficiency
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AM7808
AM7808HighEfficiency
EGSM850
EGSM900
DCS1800
PCS1900
DS121106
AM7808-CLZ
AM7808-CLS
AM7808CLT
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AETHERCOMM
Abstract: Acros
Text: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 7.1-7.3-10 is a High Power X • 5 watts linear or pulsed RF power min Band SSPA used in the DSCC Exciter-Transmitter • Operation from 7.1 to 7.3 GHz Subsystem. It is used as a TWT driver amplifier. It
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CHA7010
Abstract: x-Band High Power Amplifier
Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP
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CHA7010
CHA7010
DSCHA70104054
x-Band High Power Amplifier
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RF Power Amplifier 125KHz
Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF
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RFHA5966AX
RFHA5966A
4500m
4000m
41dBm
RFHA5966A
1N4148,
RF Power Amplifier 125KHz
1n4148 die
GAAS FET AMPLIFIER x-band 10w
x-Band Hemt Amplifier
95GHZ
10Ghz RF Power 10w amplifier
"15 GHz" power amplifier 41dBm
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Untitled
Abstract: No abstract text available
Text: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that
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EMM5079X
EMM5079X
1906B,
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MMIC X-band amplifier
Abstract: No abstract text available
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF
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RFHA5966A
RFHA5966AX
41dBm
RFHA5966A
Radar023
1N4148,
DS111023
MMIC X-band amplifier
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RF1136
Abstract: RF113 RF327
Text: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB
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RF1136
12-Pin,
RF1136
DS090630
RF113
RF327
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Untitled
Abstract: No abstract text available
Text: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB
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RF1136
12-Pin,
RF1136
DS090630
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AN0020
Abstract: CHA5014 9v23
Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to
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CHA5014
CHA5014
30dBm
DSCHA50140112
AN0020
9v23
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CHA7010
Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA7010
CHA7010
DSCHA70102175
-24-June-02
x-Band High Power Amplifier
x band Gaas Power Amplifier 10W
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SSPA
Abstract: x-Band High Power Amplifier x-band power transistor Solid State Microwave x band high power amplifier x band receiver x band pulsed amplifier x band satellite
Text: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 9.5-10.5-20 is a high power, • 20 watts typical CW or pulsed RF power X band, solid state power amplifier. Class AB biasing • Operation from 9.5 to 10.5 GHz affords high output power pulsed or CW while
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C10535E
Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58
Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package
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NE72218
NE72218-T1
NE72218-T2
C10535E
NE72218
NE72218-T1
NE72218-T2
VP15-00-3
ne72218 v58
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Untitled
Abstract: No abstract text available
Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that
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EMM5079ZB
20pin
EMM5079ZB
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Arrayed Waveguide Grating
Abstract: PT100 resistor GR-1221-CORE PT100 RTD signal conditioning rtd pt100 datasheet pt100 temp Power Line Communications
Text: V23846-Pwxyz * 40 Channel Smart DEMUX with Integrated Power Monitor Preliminary Dimensions in mm 156 182.04 2.54 50 11 7.35 25.40 45.14 Types of Components MUX DEMUX-LL DEMUX-FT C-Band (first channel 192.0 THz) X X L-Band (first channel 186.7 THz) X X * Ordering Information
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V23846-Pwxyz(
D-13623,
Arrayed Waveguide Grating
PT100 resistor
GR-1221-CORE
PT100 RTD signal conditioning
rtd pt100 datasheet
pt100 temp
Power Line Communications
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S1502
Abstract: SKY65152-11 sky65152
Text: DATA SHEET SKY65152-11: 2.4-2.5 GHz WLAN Power Amplifier Applications Description x IEEE 802.11 b/g WLANs x ISM band transmitters x WCS fixed wireless x Wireless access nodes The SKY65152-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity,
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SKY65152-11:
SKY65152-11
200968F
S1502
sky65152
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X-band Gan Hemt
Abstract: FMA3015 MIL-HDBK-263 9-GHz
Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Die: 4.52mmx3.05mm Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3015
52mmx3
FMA3015
FMA3015-000
FMA3015-000SQ
FMA3015-000S3
DS081118
FMA3015-000SB
X-band Gan Hemt
MIL-HDBK-263
9-GHz
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99-F
Abstract: CHA5012-99F CHA5012
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA5012
CHA5012
DSCHA50126286
99-F
CHA5012-99F
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Untitled
Abstract: No abstract text available
Text: PF0310 MOS FET Power Amplifier Module for VHF Band HITACHI Application VHF Band 136 to 150 MHz Features • Small package: 30 x 10 x 5.9 mm • High efficiency: 55% Typ • Low power control current: 0.5 mA Max Pin Arrangement ADE-208-103B Z 3rd Edition
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PF0310
ADE-208-103B
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TGA2533
Abstract: x-band power amplifier TGA2535-SM
Text: TGA2535-SM X-Band Power Amplifier Applications • • Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features • • • • • • • • Functional Block Diagram 24 Frequency Range: 10 – 12 GHz TOI: 43 dBm Power: 34.5 dBm Psat, 33 dBm P1dB
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TGA2535-SM
TGA2535-SM
43dBm
20dBm
TGA2533
x-band power amplifier
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x-band power amplifier
Abstract: No abstract text available
Text: TGA2535-SM X-Band Power Amplifier Applications • • Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features • • • • • • • • Functional Block Diagram 24 Frequency Range: 10 – 12 GHz TOI: 43 dBm Power: 34.5 dBm Psat, 33 dBm P1dB
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TGA2535-SM
TGA2535-SM
43dBm
20dBm
x-band power amplifier
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X-band Gan Hemt
Abstract: MIL-HDBK-263 fma3010
Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3010
FMA3010
FMA3010-000
FMA3010-000SQ
DS090612
FMA3010-000S3
X-band Gan Hemt
MIL-HDBK-263
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Untitled
Abstract: No abstract text available
Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3010
FMA3010
FMA3010-000
FMA3010-000SQ
DS091124
FMA3010-000S3
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