X28C010D-15
Abstract: FN8105 GDIP1-T32 x28c010dmb-20 X28C010 X28C010D-12 X28C010DI X28C010DI-12 X28HT010 F326
Text: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the
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X28C010,
X28HT010
X28C010/X28HT010
FN8105
120ns
256-bion
X28C010D-15
GDIP1-T32
x28c010dmb-20
X28C010
X28C010D-12
X28C010DI
X28C010DI-12
X28HT010
F326
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X28C010
Abstract: 37KW X28C010-20 X28C010-25 X28C010I X28C010M
Text: X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits —Self-Timed • No Erase Before Write • No Complex Programming Algorithms
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X28C010
120ns
X28C010
37KW
X28C010-20
X28C010-25
X28C010I
X28C010M
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GDIP1-T32
Abstract: F3262 INTERSIL LCC-32 12c772 F326
Text: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the
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X28C010,
X28HT010
FN8105
X28C010/X28HT010
256-byte
X28HT010
GDIP1-T32
F3262
INTERSIL LCC-32
12c772
F326
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X28C0101
Abstract: FN8105 x28c010dmb-20 X28C010 X28C010D X28C010D-12 X28C010D-15 X28C010DI X28C010DI-12 X28C010DI-15
Text: X28C010 Data Sheet May 11, 2005 FN8105.0 5 Volt, Byte Alterable EEPROM Features The Intersil X28C010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C010 is a 5V only device. The
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X28C010
FN8105
X28C010
120ns
256-byte
X28C0101
x28c010dmb-20
X28C010D
X28C010D-12
X28C010D-15
X28C010DI
X28C010DI-12
X28C010DI-15
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Untitled
Abstract: No abstract text available
Text: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the
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X28C010,
X28HT010
X28C010/X28HT010
FN8105
120ns
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TMS27256
Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
Text: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64
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2716BDC
Am27C64
Am2864AE
Am2864BE
Am27C128
Am27C256
Am27H256
Am27C512
Am27C512L
Am27C010
TMS27256
M27512FI
TC571000D-15
et2732
TC571001D-15
4827128
27c1001a
Toshiba TC571000D-20
28C256
27c32
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X28C010
Abstract: X28C010-20 X28C010-25 X28C010I X28C010M XICOR X28C010 a8a16
Text: X28C010 X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X28C010 is a 128K x 8 E2PROM, fabricated with Xicor's proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C010 is a 5V only device. The
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X28C010
X28C010
X28C010-20
X28C010-25
X28C010I
X28C010M
XICOR X28C010
a8a16
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64 CERAMIC LEADLESS CHIP CARRIER LCC
Abstract: T05 Package transistor T04 X28C010 X28C010-20 X28C010-25 X28C010I X28C010M XICOR X28C010
Text: X28C010 X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X28C010 is a 128K x 8 E2PROM, fabricated with Xicor's proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C010 is a 5V only device. The
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X28C010
X28C010
9-A-0013
64 CERAMIC LEADLESS CHIP CARRIER LCC
T05 Package
transistor T04
X28C010-20
X28C010-25
X28C010I
X28C010M
XICOR X28C010
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X28C0101
Abstract: XICOR X28C010
Text: Haas ADVANCED INFORMATION 1M Commercial X28C010 _ _ Industrial_ X28C010I_ îZoK x 8 Bit Electrically Erasable PROM FEATURES • Low Power CMOS — 53 mA Active Current Max. — 590 fxA Standby Current Max. • High Speed Page Write Operation
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X28C010
X28C010I_
256-Byte
X28C010
X2MC010,
X28C010I
32-LEAD
X28C0101
XICOR X28C010
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Xicor 28C010
Abstract: 28C010-200 28C010-120 28C010-150 XM28C010-25 28C010-250 28C010H-120 28C010H-150 28C010H-200 28C010H-250
Text: - 152- 2 8 C O 1 O m & ít * m sm cc> X 4 A « TAAC max ns TCAC max (ns) TOH tax (ns) TOE max (ns) TOD max (ns) VDD (V) I DD/STANDBY (ibA) VIL max (V) 1 VIH min (V) & ii / m £ Ci tax (pF) V O L / I VOL max (V/mA) mæ V O H / I VOH min (V/mA) Co max (pF)
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28C010-120
28C010-150
28C010-200
28C010-250
28C010H-120
28C0/2
28C010
Pin32
Xicor 28C010
XM28C010-25
28C010H-150
28C010H-200
28C010H-250
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lk 3058
Abstract: No abstract text available
Text: i m X28C010 1M 128K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages o r VPP Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithm s
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X28C010
120ns
lk 3058
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Untitled
Abstract: No abstract text available
Text: X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V PP Control Cir cuits — Self-Timed • No E ra se B efo re W rite • No C o m p le x P ro g ra m m in g A lg o rith m s
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X28C010
120ns
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