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    XA2 TRANSISTOR Search Results

    XA2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    XA2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    XA2 MMIC

    Abstract: No abstract text available
    Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular


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    SXA-289 SXA-289 100mA EDS-100622 XA2 MMIC PDF

    Xa2 TRANSISTOR

    Abstract: SXH-189 6 ghz amplifier 20w
    Text: Preliminary Preliminary Product Description SXH-189 Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth


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    SXH-189 SXH-189 39dBm 1500mW 100mW EDS-101247 Xa2 TRANSISTOR 6 ghz amplifier 20w PDF

    Xa2 TRANSISTOR

    Abstract: SXH-189 AN023
    Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth


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    SXH-189 SXH-189 EDS-101247 Xa2 TRANSISTOR AN023 PDF

    XA2 MMIC

    Abstract: Xa2 TRANSISTOR
    Text: Preliminary Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular


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    SXA-289 SXA-289 EDS-100622 XA2 MMIC Xa2 TRANSISTOR PDF

    XA2 MMIC

    Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
    Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


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    SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No PDF

    XA2 MMIC

    Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
    Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


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    SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No SIRENZA Sirenza C4 marking PDF

    Sirenza amplifier SOT-89 Marking

    Abstract: .XA2
    Text: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth


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    SXH-189 SXH-189 SXA-289 016REF 118REF 041REF EDS-101247 Sirenza amplifier SOT-89 Marking .XA2 PDF

    Xa2 TRANSISTOR

    Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
    Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


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    SXA-289 SXA-289 016REF 118REF 041REF EDS-100622 Xa2 TRANSISTOR XA2 MMIC Sirenza amplifier SOT-89 marking XA2 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING PDF

    Xa2 TRANSISTOR

    Abstract: 12V DC Fluorescent lamp LVD BLOCK DIAGRAM FOR LPG GAS DETECTION LVDS 30 pin hirose connector LVDS DF19G-20P-1H DF19G-20S-1C DF19G-20S-1F LQ201U1LW11Z THC63LVDM83R Xa3 TRANSISTOR
    Text: RECORDS OF REVISION LQ201U1LW11Z SPEC No. DATE No. LD-15Y11 Nov.28. 2003 SUMMARY REVISED NOTE PAGE 1 st Issue LD-15Y11-1 1. Application This specification applies to the monochrome 20.1 UXGA TFT-LCD module LQ201U1LW11Z. ◎These specification sheets are the proprietary product of SHARP CORPORATION ”SHARP and include


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    LQ201U1LW11Z LD-15Y11 LD-15Y11-1 LQ201U1LW11Z. LD-15Y11-19 LD-15Y11-20 LD-15Y11-21 Xa2 TRANSISTOR 12V DC Fluorescent lamp LVD BLOCK DIAGRAM FOR LPG GAS DETECTION LVDS 30 pin hirose connector LVDS DF19G-20P-1H DF19G-20S-1C DF19G-20S-1F LQ201U1LW11Z THC63LVDM83R Xa3 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Preliminary Product Description SXH-189 Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth


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    SXH-189 SXH-189 EDS-101247 PDF

    BLOCK DIAGRAM FOR LPG GAS DETECTION

    Abstract: Nan Ya Plastics Corp. Xa2 TRANSISTOR china model inverter circuit diagram LVDS 30 pin hirose connector LVDS lcd screen LVDS connector 30 pins LVDS 40 pin hirose connector LVDS 4 MHz crystal 2pin Block diagram on monochrome tv receiver Nan Ya Plastics Corp. lcd
    Text: LQ201U1LW11 TFT-LCD Module Model Number: LQ201U1LW11 Specifications Spec No.: LD-14117 Dated: May 29, 2002 PREPARED BY : DATE SPEC No. LD-14117 FILE No. ISSUE : Feb.25.2002 APPROVED BY : DATE PAGE : 23 pages TFT LCD DEVELOPMENT GROUP APPLICABLE GROUP SHARP CORPORATION


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    LQ201U1LW11 LQ201U1LW11) LD-14117 BLOCK DIAGRAM FOR LPG GAS DETECTION Nan Ya Plastics Corp. Xa2 TRANSISTOR china model inverter circuit diagram LVDS 30 pin hirose connector LVDS lcd screen LVDS connector 30 pins LVDS 40 pin hirose connector LVDS 4 MHz crystal 2pin Block diagram on monochrome tv receiver Nan Ya Plastics Corp. lcd PDF

    TB6562AFG

    Abstract: TB6562ANG
    Text: TB6562ANG/AFG Usage Considerations TB6562ANG/AFG Usage Considerations The TB6562ANG/AFG is a 2-phase bipolar stepping motor driver. It drives at a constant current by PWM control. 1. Power Supply Voltage 1 Operating Range of Power Supply Voltage Characteristic


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    TB6562ANG/AFG TB6562AFG TB6562ANG PDF

    Xa2 TRANSISTOR

    Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ
    Text: Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


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    SXA-289 016REF 118REF 041REF EDS-100622 Xa2 TRANSISTOR transistor 289 MMIC "SOT 89" marking rf power amplifier 850 MHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: TB6562ANG/AFG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6562ANG/AFG Dual Full-Bridge Driver IC for Stepping Motors The TB6562ANG/AFG is a 2-phase bipolar stepping motor driver that contains DMOS transistors in the output stage. The driver


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    TB6562ANG/AFG TB6562ANG/AFG TB6562ANG TB6562ANG; SDIP24-P-300-1 SSOP30-P-375-1 PDF

    TB6562AFG

    Abstract: TB6562ANG
    Text: TB6562ANG/AFG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6562ANG/AFG Dual Full-Bridge Driver IC for Stepping Motors The TB6562ANG/AFG is a 2-phase bipolar stepping motor driver that contains DMOS transistors in the output stage. The driver achieves high efficiency through the use of low ON-resistance


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    TB6562ANG/AFG TB6562ANG/AFG TB6562ANG TB6562AFG TB6562ANG; SDIP24-P-300-1 TB6562AFG TB6562ANG PDF

    Xa2 TRANSISTOR

    Abstract: C1249 C1250 CA10 CA16 CB10 SKY42054 GaAs MESFET SKYWORKS PQFP 24 LDB15C500A2100
    Text: DATA SHEET SKY42054: 1700 – 2200 MHz High Dynamic Range, Diversity Receiver Front End Applications Description • PCS/DCS/UMTS communications Skyworks SKY42054 is an integrated, high-dynamic range, lownoise receiver down converter for two-channel diversity systems.


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    SKY42054: SKY42054 101432D Xa2 TRANSISTOR C1249 C1250 CA10 CA16 CB10 GaAs MESFET SKYWORKS PQFP 24 LDB15C500A2100 PDF

    SXT-289

    Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC
    Text: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth


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    SXT-289 Pate02 016REF 118REF 041REF EDS-101157 transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC PDF

    Xa2 TRANSISTOR

    Abstract: Hitachi DSA00772 SEG40
    Text: H8/3857 Series Application Note ADE-502-067 Rev. 1.0 8/28/1999 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


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    H8/3857 ADE-502-067 Xa2 TRANSISTOR Hitachi DSA00772 SEG40 PDF

    SEG40

    Abstract: transistor p9n
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    H8/3857 SEG40 transistor p9n PDF

    creative sound blaster 5.1 circuit diagram

    Abstract: CS4236 Roland e 30 schematic SPST toggle switch intel 945 motherboard schematic diagram CRD4236-3 pc motherboard schematics yamaha ELS 01 phono preamplifier circuit diagram D3031
    Text: CS4236 A Cirrus Logic Company Single Chip Audio System General Description • Compatible with Sound Blaster , Sound Blaster Pro , and Windows Sound System™ • Fully Plug-and-Play ISA Compatible • Industry Leading Delta-Sigma Data Converters • Internal or External FM Synthesis Support


    OCR Scan
    CS4236 CS4236 MPU-401 iCU-V1H220KCV FXR-VRV472JV FXB-V4V473. ERJ-3EKF47 creative sound blaster 5.1 circuit diagram Roland e 30 schematic SPST toggle switch intel 945 motherboard schematic diagram CRD4236-3 pc motherboard schematics yamaha ELS 01 phono preamplifier circuit diagram D3031 PDF

    XT1B

    Abstract: TB6562ANG XT2B SDIP-24-P-300-1
    Text: TB6562ANG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6562ANG Dual Full-Bridge Driver IC for Stepping Motors The TB6562ANG is a 2-phase bipolar stepping motor driver that contains DMOS transistors in the output stage. The driver achieves high efficiency through the use of low ON-resistance


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    TB6562ANG TB6562ANG SDIP24-P-300-1 78lity XT1B XT2B SDIP-24-P-300-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TB6562ANG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6562ANG Dual Full-Bridge Driver IC for Stepping Motors The TB6562ANG is a 2-phase bipolar stepping motor driver that contains DMOS transistors in the output stage. The driver achieves high efficiency through the use of low ON-resistance


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    TB6562ANG TB6562ANG PDF

    FZE1066

    Abstract: HC68705BE12 68HC705BE12 MC68HC705BE12 siemens eib capacitor .22u P900 FZE 1066 mc68hc705be siemens handbook
    Text: TECHNICAL DATA EIB-Twisted Pair Transceiver FZE 1066 – EIB Features GNDBUS CB1 RBY VDD KOLL EMI DFB VCC SEND SAVE 1 20 2 3 19 18 4 17 5 6 16 15 7 14 8 13 9 12 10 11 ABUS IAST CREC TEMP CAST GNDLOG VAST ABUS/8 QREC RESET • EIB - Line driver • EIB - Line receiver with hysteresis


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    MC68r FZE1066 HC68705BE12 68HC705BE12 MC68HC705BE12 siemens eib capacitor .22u P900 FZE 1066 mc68hc705be siemens handbook PDF

    lmg 162 stn

    Abstract: GPL162003 PHONEJACK STEREO SW efuse ROM 7band eq GPL162003A1 GPIO14 sunplus program rom 7 band EQ gpl162003a
    Text: GPL162003A1 Advanced 16-Bit SoC with ’nSP 2.0 AUG. 16, 2007 Version 1.2 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS


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    GPL162003A1 16-Bit lmg 162 stn GPL162003 PHONEJACK STEREO SW efuse ROM 7band eq GPL162003A1 GPIO14 sunplus program rom 7 band EQ gpl162003a PDF