K 1358 fet transistor
Abstract: 28428 A 27631 transistor xmfp1-m3 XMFP3-M3 064110 9-8318 GaAS fet sot89 S0731 65851
Text: このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。 GaAs No.O35.pdf 98.3.18 GaAs FET GaAs FIELD EFFECT TRANSISTOR Cat.No. O35 このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。
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O35webPDF
CGRM39
RMCR03
1000pF
4700pF
K 1358 fet transistor
28428
A 27631 transistor
xmfp1-m3
XMFP3-M3
064110
9-8318
GaAS fet sot89
S0731
65851
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PDF
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XMFP1-M3
Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••
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Rating3-5698410
XMFP1-M3
D 8243 HC
E176
e170315
OF FET E176
FET E119
E176 field effect transistor
E176 fet
mc34063 step down external transistor
28428
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transistor application
Abstract: transistor XMFP1-M3 power transistor 23 transistor marking transistor mesfet low noise transistor "Power transistor" mesfet low noise DECT 6.0
Text: Microwave Components Microwave Components Field-Effect Transistor MESFET Low Noise Transistor 1.5 0.4 0.65 (2) (3) B 2.9 1.9 A (4) 0.8 0.3 (1) XMFS2-M1 Pin (1):Source (2):Gate (3):Source (4):Drain Marking A : Part No. B : Lot No. in mm Type Application Gain
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Untitled
Abstract: No abstract text available
Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS POWER FET’S XMFP Series FEATURES • High power output ■ Excellent linear power gain APPLICATIONS ■ C-band power amps up to 6GHz ■ Wireless telecommunication base stations GSM, DCS, PCS, ISM, etc.
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10dBm)
20dBm)
30dBm
24dBm)
35dBm
100ms
0-35-E,
CG01-I
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PDF
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XMFP1-M3
Abstract: No abstract text available
Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS POWER FET’S XMFP Series FEATURES • High power output ■ Excellent linear power gain APPLICATIONS ■ C-band power amps up to 6GHz ■ Wireless telecommunication base stations GSM, DCS, PCS, ISM, etc.
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Original
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10dBm)
23dBm
15dBm)
20dBm)
24dBm)
35dBm
100ms
0-35-E,
CG01-H
XMFP1-M3
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PDF
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DFY2R902
Abstract: DFY2R902CR947BHG MuRata Gigafil XMFP1-M3 DFY21R88 DFY2R902CR947 DFC3r LFJ30-03 Ferrite Circulators at 15 ghz MQE9
Text: This is the PDF file of catalog No.K09E-4. No.K09E4.pdf 99.8.31 Murata Products for Mobile Communications GSM DCS1800 PCN E-TACS DECT CT-2 PCS (IS136) AMPS/ADC PCS (GSM) CDMA800 PCS (CDMA) ISM900 PDC800 PDC1500 NTACS/CDMA PHS GSM CDMA E-TACS/AMPS PHS DECT
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K09E-4.
K09E4
DCS1800
IS136)
CDMA800
ISM900
PDC800
PDC1500
DFY2R902
DFY2R902CR947BHG
MuRata Gigafil
XMFP1-M3
DFY21R88
DFY2R902CR947
DFC3r
LFJ30-03
Ferrite Circulators at 15 ghz
MQE9
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PDF
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murata lot no
Abstract: xmfp1-m3 XMFP2-M3 marking .A gaas fet marking B marking A
Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS POWER FET’S XMFP Series FEATURES • High power output ■ Excellent linear power gain APPLICATIONS ■ C-band power amps up to 6GHz ■ Wireless telecommunication base stations GSM, DCS, PCS, ISM, etc.
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30dBm
26dBm
10dBm)
23dBm
15dBm)
20dBm)
24dBm)
100ms
0-35-E,
CG01-J
murata lot no
xmfp1-m3
XMFP2-M3
marking .A
gaas fet marking B
marking A
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transistor XM
Abstract: transistor power transistor k 30 transistor TRANSISTOR P 3 transistor mesfet transistor l 2 xmfp1-m3
Text: Microwave Components Microwave Components Field-Effect Transistor MESFET Low Noise Transistor r •■ i m cd (3l (2 ) '~'B - (4) m -m l XMFS2-M1 Pm M arking (1) So urce 12V. G a te (3): Source (4) : Dram A : Part No. B . Lo i No. in mm Gain (dB) Minimum Noise Figure
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OCR Scan
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AS15D
Abstract: sot89 fet GaAs FET sot89 FET SOT89 ANCLC2R45J100AAA
Text: MICROWAVE PRODUCTS m u ffa ta GaAs FET/Antenna •Small Signal FET XMFS Series Parts Number j XMFS2-M1 Package Main Characteristics Application Plastic F m in= 0.4 dB @ 2G H zi Gas— ^ d B DBS Oscillator LNA (PCS. PDC, PHS F m in= 0.4 dB (@2GHz) G as=15dB
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OCR Scan
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T-143)
OT-89)
Po--23dBm
LDA36A1907A
ANACLC1R90J025AAA
R89J020AAa
ANACGC1R48U024AAC
AS15D
sot89 fet
GaAs FET sot89
FET SOT89
ANCLC2R45J100AAA
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PDF
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.a h marking
Abstract: marking A S220M
Text: OTHER PRODUCTS G aA s f ie ld e f f e c t t r a n s is t o r s POWER FET'S m t t f ì n t a in E U c fy c n ta XMFP Series FEATURES • High power output ■ Excellent linear power gain APPLICATIONS ■ C-band power amps up to 6G H z ■ W ireless telecommunication base stations G SM , DCS,
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OCR Scan
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26dBm
30dBm
35dBm
0-35-E,
.a h marking
marking A
S220M
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PDF
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