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    Marathon Special Products MS672XP107E

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    Master Electronics MS672XP107E
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    VENKEL LTD MELFC0207-XP-1072BT

    MELF Coated Thin Film CR;0207;1W;�5PPM;10.7K;�0.1%
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    Venkel Ltd. MELFC0207-XP-1072BT Reel 6 Weeks, 3 Days 2,000
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    VENKEL LTD MELFC0207-XP-1072CT

    MELF Coated Thin Film CR;0207;1W;�5PPM;10.7K;�0.25%
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    Venkel Ltd. MELFC0207-XP-1072CT Reel 6 Weeks, 3 Days 2,000
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    VENKEL LTD MELFC0207-XP-1070CT

    MELF Coated Thin Film CR;0207;1W;�5PPM;107R;�0.25%
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    Venkel Ltd. MELFC0207-XP-1070CT Reel 6 Weeks, 3 Days 2,000
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    VENKEL LTD MELFC0207-XP-1073CT

    MELF Coated Thin Film CR;0207;1W;�5PPM;107K;�0.25%
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    Venkel Ltd. MELFC0207-XP-1073CT Reel 6 Weeks, 3 Days 2,000
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    XP107 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    315 MHz Power Amplifier

    Abstract: CC11R CAPACITOR MURATA XP1076-SD
    Text: 700-2300 MHz 31.5 dBm InGaP HBT Power Amplifier XP1076-SD January 2010 - Rev 13-Jan-10 Features 31.5 dBm P1dB 46.5 dBm OIP3 Active Bias Circuit 14.5 dB Gain @ 2GHz 5V Single Positive Voltage Supply RoHS Compliant SOIC-8 General Description The XP1076-SD is a high linearity power amplifier capable of 31.5 dBm


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    PDF XP1076-SD 13-Jan-10 XP1076-SD 315 MHz Power Amplifier CC11R CAPACITOR MURATA

    XP1073-BD

    Abstract: xp1073 DM6030HK XP107
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


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    PDF P1073-BD 16-Feb-10 MIL-STD-883 XP1073-BD XP1073-BD xp1073 DM6030HK XP107

    AMBA AXI dma controller designer user guide

    Abstract: BP132 AMBA AXI to APB BUS Bridge verilog code primecell PL330 AMBA AXI to AHB BUS Bridge verilog code manual de transistors k44 XP35 XP95 axi wrapper AMBA AXI designer user guide
    Text: Application Note 224 Example LogicTile Express 3MG design for a CoreTile Express A9x4. Document number: ARM DAI 0224 Issued: December 2009 Copyright ARM Limited 2009 Application Note 224 Example LogicTile Express 3MG design for a CoreTile Express A9x4 Copyright 2009 ARM Limited. All rights reserved.


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    tanaka TS3332LD epoxy

    Abstract: XP1073-BD P1073-BD ka-band bare
    Text: 33-37 GHz GaAs MMIC Power Amplifier P1073-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 6.5 W Power Amplifier 22 dB Small Signal Gain 37 - 38 dBm Pulsed Saturated Output Power Up to 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


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    PDF 14-Jul-08 P1073-BD MIL-STD-883 XP1073-BD-000V tanaka TS3332LD epoxy XP1073-BD ka-band bare

    tanaka gold wire

    Abstract: tanaka au wire DM6030HK tanaka TS3332LD
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


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    PDF 16-Oct-08 P1070-BD MIL-STD-883 chipD-000V XP1070-BD-EV1 XP1070-BD tanaka gold wire tanaka au wire DM6030HK tanaka TS3332LD

    tanaka TS3332LD

    Abstract: tanaka TS3332LD epoxy DM6030HK-Pt tanaka gold wire tanaka aluminum wire DM6030HK TS3332LD
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


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    PDF 28-Sep-08 P1070-BD MIL-STD-883 chD-000V XP1070-BD-EV1 XP1070-BD tanaka TS3332LD tanaka TS3332LD epoxy DM6030HK-Pt tanaka gold wire tanaka aluminum wire DM6030HK TS3332LD

    XP1070-BD

    Abstract: P1070-BD MMIC 5043 DM6030HK 10W Power Amplifier XP1070 OC 140 germanium transistor
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +38.5 dBm P1dB Compression Point +40.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept


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    PDF P1070-BD 04-Jan-10 MIL-STD-883 XP1070-BD 070-BD-EV1 XP1070-BD P1070-BD MMIC 5043 DM6030HK 10W Power Amplifier XP1070 OC 140 germanium transistor

    Untitled

    Abstract: No abstract text available
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD March 2009 - Rev 07-Mar-09 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept


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    PDF P1070-BD 07-Mar-09 MIL-STD-883 rP1070-BD-EV1 XP1070-BD

    Untitled

    Abstract: No abstract text available
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD March 2008 - Rev 08-Mar-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


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    PDF P1072-BD 08-Mar-09 MIL-STD-883 XP1072-BD-EV1 XP1072-BD

    Untitled

    Abstract: No abstract text available
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD March 2009 - Rev 07-Mar-09 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain 37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


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    PDF P1073-BD 07-Mar-09 MIL-STD-883 XP1073-BD-EV1 XP1073-BD

    XP1072-BD

    Abstract: ka-band bare xp1072-bd-000v P1072-BD XP1072
    Text: 33-37 GHz GaAs MMIC Power Amplifier P1072-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 4 W Power Amplifier 22 dB Small Signal Gain 35 - 36 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


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    PDF 14-Jul-08 P1072-BD MIL-STD-883 XP1072-BD-000V XP1072-BD ka-band bare xp1072-bd-000v XP1072

    DM6030HK

    Abstract: No abstract text available
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD January 2009 - Rev 23-Jan-09 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain 37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


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    PDF 23-Jan-09 P1073-BD MIL-STD-883 aBD-000V XP1073-BD-EV1 XP1073-BD DM6030HK

    XP1071-BD-EV1

    Abstract: No abstract text available
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1071-BD March 2009 - Rev 06-Mar-09 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power


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    PDF P1071-BD 06-Mar-09 MIL-STD-883 XP1071-BD-EV1 XP1071-BD XP1071-BD-EV1

    XP1072-BD

    Abstract: XP1072-BD-000V ID232 DM6030HK 152.01 VD55
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 4W Power Amplifier 22.0 Small Signal Gain +35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


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    PDF P1072-BD 16-Feb-10 MIL-STD-883 XP1072-BD XP1072-BD-000V ID232 DM6030HK 152.01 VD55

    DM6030HK

    Abstract: XP1072-BD
    Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD January 2009 - Rev 29-Jan-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


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    PDF 29-Jan-09 P1072-BD MIL-STD-883 viaBD-000V XP1072-BD-EV1 XP1072-BD DM6030HK

    xg1015-SE

    Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
    Text: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 [email protected] Alabama Office 256-880-8050 [email protected]


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