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Catalog Datasheet	MFG & Type	Document Tags	PDF
XP151A13COMR Abstract: No abstract text available Text: XP151A13COMR 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS ON , Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 85m Ω 115mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G	Original	XP151A13COMR OT-23 XP151A13COMR	PDF

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XP151A13COMR

Abstract: No abstract text available
Text: XP151A13COMR 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS ON , Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 85m Ω 115mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G

Original

XP151A13COMR OT-23 XP151A13COMR

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