Untitled
Abstract: No abstract text available
Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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QSB363C
QSB363
QEB363
QEB373
QSB363C
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xs 004 a
Abstract: No abstract text available
Text: REVISION AC NOTES: 1. REPRESENTS A CRITICAL DIMENSION. 2. PARTS SHALL BE ROHS COMPLIANT. 3. PARTS TO BE PACKAGED IN TRAYS, TAIL SIDE DOWN. LESS THAN FULL TRAY QUANTITIES ARE TO BE PACKAGED IN COVERED TRAYS TRIMMED TO MATCH QUANTITY ORDERED 4. HDMR FORMERLY NAMED HDMI.
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HDMR-19-01-X-TH-PF-L
HDMR-29-01-X-TH-PF-L,
UL94V-0)
xs 004 a
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVIS IO N S LOC DIST AD 25 LTR F HOUSING MATERIAL: CONTACT MATERIAL: G LA S S - FILLE D PHOSPHOR POLYESTER. COLOR: DESCRIPTION
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31MAR2000
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R14F
Abstract: No abstract text available
Text: JOHANSON TI ©LOdY Johanson’s F-Series ceramic capacitors exhibit the excellent high frequency performance of thin film silicon oxide capacitors while offering some key advantages, namely better resistance to circuit assembly process extremes and lower cost. This unique MLCC design
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50kHz,
R14F
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PDF
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39B4
Abstract: xs 004 a POSITION SENSITIVE DETECTOR 1/Detector/"Detector IC"/"CD"/INA104BM/SM/motion detector ic
Text: iC-OD OPTICAL POSITION SENSITIVE DETECTOR PSD FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low-noise current amplifier with integrated position sensitive photodiode High reliability due to monolithical design Effective photodiode area 2.6mm x 0.88mm
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OCR Scan
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100kHz
T039-4F
D-55294
Bodenhe49-6135-9292-0
39B4
xs 004 a
POSITION SENSITIVE DETECTOR
1/Detector/"Detector IC"/"CD"/INA104BM/SM/motion detector ic
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PDF
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Untitled
Abstract: No abstract text available
Text: 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89950 Series MB89951/953/P955/PV950 • OUTLINE The MB89950 series of single-chip compact microcontroller using the F2MC*-8L family core which can operate at high-speeds and low voltages. They contain peripherals such as timers, UART, serial interfaces, external
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MB89950
MB89951/953/P955/PV950
168-pixel
D-63303
F9801
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PDF
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TRANSISTOR D 1765
Abstract: PH2731-80M 1J41
Text: H/ A- COM HÖE D P H 0 m SbMSSOS 0 0 0 0 7 7 1 SS3 • J1AP PH2731-80M Microwave Pulsed Power Transistor Design Characteristics A — B • • • • • 100 |xS Pulse Operation Broadband 2.7 - 3.1 GHz Operation Common Base Configuration Hermetic Metal / Ceramic Package
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PH2731-80M
75052731-80M
TRANSISTOR D 1765
1J41
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PDF
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Untitled
Abstract: No abstract text available
Text: AEPSS128K16 STATIC RAM MODULE >> 131 ,0 7 2 x 16 O rgan izatio n > > H igh s p e e d a d d re s s /c h ip s e le c t tim e > > H igh sp eed, H igh density 4 5 p in SIP > > C om pletely Static o p eratio n > > TTL co m p a tib le > > L ow p o w er, b attery b a c k -u p o p eratio n cap ability
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AEPSS128K16
32KX0
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Untitled
Abstract: No abstract text available
Text: iC-OF if f if ll 3-BIT OPTO ENCODER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Monolithic construction with integrated photodiodes ensures excellent matching and technical reliability Short track spacing of 600^m Elimination of dark currents through differential scanning
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cust49-6135-9292-0
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Untitled
Abstract: No abstract text available
Text: _ S Sullins Headers M ic r o P l a s t ic s u llin s 1.OOmm [.039"] Contact Centers, Top/Bottom Entry SMT Female Headers SPECIFICATIO N S • Insulator Material: L.C.P, UL 94V-0 • Contact Resistance: 20m OHMs Max. • Current Rating: 1 AMP per contact • Dielectric Withstanding Voltage: AC 300 V.
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SFM210-LP
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Untitled
Abstract: No abstract text available
Text: ASSP Power Supply BIPOLAR Power Management Switching 1C with flash memory power switching function MB3807A • DESCRIPTION When data is written to or read from flash memory, it requires that the voltage at its power supply (to 12 V for writing and to 3.3 or 5.0 V for reading).
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MB3807A
MB3807A
MB3807APF
FPT-16P-M04)
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PDF
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Untitled
Abstract: No abstract text available
Text: Features * Fast Read Access Time - 70 ns * Low Power CMOS Operation - 100 |jA max. Standby - 30 mA max. Active at 5 MHz * JEDEC Standard Packages - 32-Lead 600-mii PDIP - 32-Lead 450-mil SOIC SOP - 32-Lead PLCC - 32-Lead TSOP * 5V + 10% Supply * High Reliability CMOS Technology
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32-Lead
600-mii
450-mil
AT27C040
AT27C040
304-bit
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PDF
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12J60
Abstract: a3012711 J006 FH2114 300v 10 amp n-channel mosfet R750 S M R750 transistor A4I
Text: m an A M P company RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 V2.00 Features ♦ N-Channel Enhancement Mode Device Meets CECOM Drawing A3012711 Designed for Frequency Hopping Systems 30*90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices
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FH2114
A3012711
VOS-30
12J60
a3012711
J006
FH2114
300v 10 amp n-channel mosfet
R750
S M R750
transistor A4I
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PDF
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TYN408G
Abstract: tyn 1225 tyn 682
Text: r Z J SCS-TNOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MogœiiL[iM MôÊi MEDIUM POWER THYRISTORS & TRIACS < 100 A STANDARD THYRISTORS PLASTIC CASE Tamb = 25°C •o Type See NOTE V (A) 4 Arms I T e a s e = 90°C TXN / TYN 054 — VRRM = VDRM 004 Tj = 110°C
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Untitled
Abstract: No abstract text available
Text: Features * Fast Read Access Tim e -1 2 0 ns * Word-wide or Byte-wide Configurable * Dual Voltage Range Operation - Unregulated Battery Power Supply Range, 2.7V to 3.6V or Standard 5V ± 1 0 % Supply Range * 4-M egabit Flash and Mask ROM Compatable * Low Power CMOS Operation
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44-Lead
48-Lead
44-Lead,
MS-018
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PDF
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LA1050
Abstract: No abstract text available
Text: iC-OG 8-BIT DIFFERENTIAL SCANNING OPTO ENCODER t u FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Monolithic construction with integrated photodiodes ensures excellent matching and technical reliability Short track spacing of 600^m
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20-pin
LA1050
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED POR ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S LOC RESERVED. AD C O R P O R A T IO N . D IS T REVISIO N S 00 D E S C R IP T IO N J1 ECO —0 7 —0 2 9 1 0 0
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DEC2007
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S LOC RESERVED. AD C O R P O R A T IO N . D IS T REVISIO N S 00 D E S C R IP T IO N E C O - 0 7- 100' DR 02M AY07
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25FEB2002
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PDF
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T85 Tyco
Abstract: 16A125VAC
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . REVIS IO N S LOC D IS T AD 0 0 p LTR F D E S C R IP T IO N ECO —07 —01 0 68 6
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17MAY07
01APR04
31MAR2000
T85 Tyco
16A125VAC
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PDF
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L4945
Abstract: No abstract text available
Text: L4945/L4950 L4951 / = 7 S G S -TH O M S O N ID 0 » [ir a T m 0 S 5V/8.5V/1 OV VERY LOW DROP VOLTAGE REGULATORS • PRECISE OUTPUT VOLTAGE: 5V ± 4% L4945 8.5V ± 4% (L4950) 10V ± 4% (L4951) OVER FULL TEMPERATURE RANGE ( - 4 0 /1 2 5 °C) ■ VERY LOW VOLTAGE DROP (0.75Vmax)
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L4945/L4950
L4951
L4945)
L4950)
L4951)
75Vmax)
500mA
L4945
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PDF
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F9707
Abstract: synthesizer pll mb15e03l
Text: ASSP • DESCRIPTION The Fujitsu M B15E03Lis serial input Phase Locked Loop PLL frequency synthesizer with a 1.2 GHz prescaler. A 64/65 or a 128/129 can be selected for the prescaler that enables pulsesStetf&llow operation. The latest BiCMOS process technology is used, resultantly a supply current is-limited as low as 2.5 mA typ.
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B15E03Lis
MB15E03L
800MHz)
F9707
F9707
synthesizer pll mb15e03l
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PDF
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MB84256C
Abstract: MB84256C-10 mb84256c-70 mb84256c-70L
Text: FUJITSU May 1994 Edition 1.0 DATA SHEET MB84256C-70/-70U-70LU-10/-10U-10LL CMOS 256K-BIT LOW POWER SRAM 32,768 WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB84256C is a 32,768-word by 8-bit static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous
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MB84256C-70/-70U-70LU-10/-10U-10LL
256K-BIT
MB84256C
768-word
MB84256C-10
mb84256c-70
mb84256c-70L
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PDF
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lg LED monitor circuit diagram
Abstract: LTA 703 S transistor da 307 702 transistor smd code 702 Z smd TRANSISTOR ffs transistor smd LTA 702 NE 702 Z TRANSISTOR smd
Text: iC-WG 14-BIT DIFFERENTIAL SCANNING OPTO ENCODER FEATURES APPLICATIONS ♦ Excellent matching and reliability due to monolithic construction with integrated photodiodes ♦ Short track pitch 600^m ♦ Elimination of dark currents due to differential scanning
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14-BIT
28-pin
lg LED monitor circuit diagram
LTA 703 S
transistor da 307
702 transistor smd code
702 Z smd TRANSISTOR
ffs transistor smd
LTA 702 NE
702 Z TRANSISTOR smd
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO N S D E S C R IP T IO N F1 ECO- -001442 DR I7 J A N 0 8
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ECO-001442
250VAC
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PDF
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