Y PARAMETERS OF RF BJT Search Results

Y PARAMETERS OF RF BJT Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

Y PARAMETERS OF RF BJT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
EEsof Circuit Components for Manual for ADS Abstract: No abstract text available Text: Agilent GENESYS Affordable • Accurate • Easy-to-Use An integrated simulation and synthesis design tool for RF/microwave circuit board and subsystem designers Agilent Genesys is an affordable, accurate, easy-to-use RF and microwave simulation tool created for the circuit	Original		PDF
XH035 Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3 Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target	Original	XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3	PDF
RFMD RF1201 Abstract: Bluetooth Jammer RF1201 jammer gsm gsm jammer Y parameters of rf bjt RFmd SPDT Text: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm        Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage: 2.6V to 5.0V	Original	RF1201 RF1201broadband -80dBc 40dBm IEEE802 11b/g 1900MHz DS101202 RFMD RF1201 Bluetooth Jammer RF1201 jammer gsm gsm jammer Y parameters of rf bjt RFmd SPDT	PDF
DRM005 Abstract: FLASHPROG ESSEPIE 433 mhz UHF RECEIVER, pcb layout and Schematic Di "Remote Keyless Entry" protocol MC33491 Remote Keyless Entry 16 pin single chip 24GHz UHF transistor CRC232 MC908RF2 HC08 Text: Remote Keyless Entry RKE Reference Design Using the MC68HC908RF2 Designer Reference Manual M68HC08 Microcontrollers DRM005/D 5/2002 WWW.MOTOROLA.COM/SEMICONDUCTORS Remote Keyless Entry (RKE) Reference Design Using the MC68HC908RF2 By: Andrea Martini ESSEPIE S.r.l. — Studio di progettazione	Original	MC68HC908RF2 M68HC08 DRM005/D DRM005 DRM005 FLASHPROG ESSEPIE 433 mhz UHF RECEIVER, pcb layout and Schematic Di "Remote Keyless Entry" protocol MC33491 Remote Keyless Entry 16 pin single chip 24GHz UHF transistor CRC232 MC908RF2 HC08	PDF
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF
CMOS spice model Abstract: MOS RM3 Spice model inductor BSIM3v3.2 XH035 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target	Original	XH035 XH035 35-micron CMOS spice model MOS RM3 Spice model inductor BSIM3v3.2 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library	PDF
Y parameters of rf bjt Abstract: RF1200 RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2 Text: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features       Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:	Original	RF1200 RF1200broadband -80dBc 11b/g RF1200 1900MHz DS101202 Y parameters of rf bjt RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2	PDF
Untitled Abstract: No abstract text available Text: RF610ÓTÌ MICRO-DEVICES 3 V 9 0 0 MHZ LINEAR POWER AMPLIFIER MODULE • 3V CDMA/AMPS Cellular Handset POWER AMPLIFIERS T y p ic a l A p p lic a tio n s Spread-Spectrum System • 3V CDMA20001/X Cellular Handset P ro d u c t D e s crip tio n The RF6100-1 is a high-power, high-efficiency linear	OCR Scan	CDMA20001/X RF610 RF6100-1 IS-95/CDMA 824MHz 849MHz RF6100-1	PDF
HRMA-0470B Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61 Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic	OCR Scan	E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61	PDF
FLASHPROG ESSEPIE Abstract: hc49smx lanex max232so MC33491 433 mhz UHF RECEIVER, pcb layout and Schematic Di 74HC139D 433MHz RS232 Schematics PC MOTHER BOARD SCHEMATICS 74HC125D Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Remote Keyless Entry RKE Reference Design Using the MC68HC908RF2 Designer Reference Manual M68HC08 Microcontrollers DRM005/D 5/2002 WWW.MOTOROLA.COM/SEMICONDUCTORS For More Information On This Product,	Original	MC68HC908RF2 M68HC08 DRM005/D FLASHPROG ESSEPIE hc49smx lanex max232so MC33491 433 mhz UHF RECEIVER, pcb layout and Schematic Di 74HC139D 433MHz RS232 Schematics PC MOTHER BOARD SCHEMATICS 74HC125D	PDF
RF Transistor s-parameter Abstract: bipolar transistor s-parameter lm 7803 s-parameter RF POWER TRANSISTOR NPN BJT with i-v characteristics transistor D 5032 bipolar transistor ghz s-parameter 60Ghz TRANSISTOR 30GHZ qubic4 Text: IEEE BCTM 10.2 An S-parameter Technique for Substrate Resistance Characterization of RF Bipolar Transistors S.D. Harker, R.J. Havenst , J.C.J. Paasschenst , D. Szmyd, L.F. Tiemeijer, and E.F. Weagel ‘ Philips Semiconductors, 9201 Pan American Frwy. NE, Albuquerque, NM 87113, USA	OCR Scan		PDF
DSX221 Abstract: 3500GIG3 14584 CMOS Bluetooth IC headset Text: SiW3500 Bluetooth SoC PLL Control • Uses standard 0.18-micron CMOS manufacturing process technology. Voltage Regulators and Power Distribution Clock Distribution CS, OE and WE Optional flash interface LNA ADC • Supports standard and 3-wire HCI transport layer modes with an	Original	SiW3500 18-micron R00Krf DSX221 3500GIG3 14584 CMOS Bluetooth IC headset	PDF
mos rm3 data Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and	Original	XA035 XA035 35-micron XH035 mos rm3 data MOS RM3 BSIM3V3 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials	PDF
Untitled Abstract: No abstract text available Text: RF6100-4 I MICRO-DEVICES 3 V 1 9 0 0 M HZ LINEAR POWER AM PLIFIER MODULE • 3V CDMA US-PCS Handset 3V CDMA2000/1X-EV-DO US-PCS • 3V CDMA2000/1XRTT US-PCS Handset Handset POWER AMPLIFIERS T y p ic a l A p p lic a tio n s Spread-Spectrum System P ro d u c t D e s c rip tio n	OCR Scan	RF6100-4 CDMA2000/1XRTT CDMA2000/1X-EV-DO IS-95/CDMA 1850MHz 1910MHz de2-98 RF6100-4	PDF

MOS RM3 Abstract: No abstract text available Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing	Original	XO035 XO035 35-micron MOS RM3	PDF
DSX221S Abstract: SiW3500 bluetooth Coexistence 3-wire OEN 46 1458 CLK32 l8838 bluetooth transmitter receiver parallel chip mobile Text: SiW3500 Preliminary • Bluetooth specification V1.2 qualified including mandatory and optional functions such as AFH and eSCO. PLL Control ADDRESS BUS VDD_P VBB_OUT VCC_OUT VBATT_DIG VBATT_ANA XTAL_N CLK_REQ_IN XTAL_P/CLK CLK_REQ_OUT VTUNE • RF System on Chip SoC for	Original	SiW3500 18-micron R00Irf DSX221S bluetooth Coexistence 3-wire OEN 46 1458 CLK32 l8838 bluetooth transmitter receiver parallel chip mobile	PDF
trace code marking RFMD Abstract: No abstract text available Text: SiW3500 Preliminary ULTIMATEBLUE Bluetooth SoC PLL Control • Uses standard 0.18-micron CMOS manufacturing process technology. Voltage Regulators and Power Distribution Clock Distribution CS, OE and WE Optional flash interface LNA ADC • Supports standard and 3-wire HCI	Original	SiW3500 18-micron R00JIrf trace code marking RFMD	PDF
HEMT GaN 8 GHz bare die Abstract: 14584 CMOS 0MFP1 trace code marking RFMD 3500GIG3 145845 Text: SiW3500 Bluetooth SoC PLL Control • Uses standard 0.18-micron CMOS manufacturing process technology. Voltage Regulators and Power Distribution Clock Distribution CS, OE and WE Optional flash interface LNA ADC • Supports standard and 3-wire HCI transport layer modes with an	Original	SiW3500 18-micron R00Lrf HEMT GaN 8 GHz bare die 14584 CMOS 0MFP1 trace code marking RFMD 3500GIG3 145845	PDF
MOS RM3 Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and	Original	XA035 XA035 35-micron XH035 MOS RM3 mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials	PDF
LOT CODE NE NEC Abstract: nec 08e 2SC5434 NE680 NE680M03 S21E nec manufacture year bf179 Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	Original	NE680M03 NE680M03 LOT CODE NE NEC nec 08e 2SC5434 NE680 S21E nec manufacture year bf179	PDF
74xx76 Abstract: TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32 Text: Electronics Workbench TM Multisim 8 Simulation and Capture TM Component Reference Guide TitleShort-Hidden cross reference text May 2005 371587A-01 Support Worldwide Technical Support and Product Information ni.com National Instruments Corporate Headquarters	Original	71587A-01 74xx76 TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32	PDF
MOS RM3 Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well" Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing	Original	XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"	PDF
XH035 library Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3 Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and	Original	XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3	PDF
T105 25E3 Abstract: GAL 16 v 8 D DIP 2SK 1110 5011F analog device 260a OP260G Text: ANALOGDEVICES fAX-ON-DEMAND HOTLINE - Page 38 -. ANALOG W DEVICES - m m Dual,High-Speed, CurrentFeedback Operational Amplifier OP-260 - PIN CONNECTIONS FEATURES Very High Slew Rate . .3dB Bandwidth Av=+10 . 550V/IlSTyp 40MHz Typ . BandwidthIndependentof Gain	Original	OP-260 50V/IlSTyp 40MHz OP260ARCI883 OP260AJ' OP260EJ OP260FJ OP26OGP OP260GS1t MIL-STD-883, T105 25E3 GAL 16 v 8 D DIP 2SK 1110 5011F analog device 260a OP260G	PDF

Y PARAMETERS OF RF BJT Search Results

Y PARAMETERS OF RF BJT Result Highlights (5)

Y PARAMETERS OF RF BJT Datasheets Context Search

EEsof Circuit Components for Manual for ADS

XH035

RFMD RF1201

DRM005

MHW721A2

CMOS spice model

Y parameters of rf bjt

Untitled

HRMA-0470B

FLASHPROG ESSEPIE

RF Transistor s-parameter

DSX221

mos rm3 data

Untitled

MOS RM3

DSX221S

trace code marking RFMD

HEMT GaN 8 GHz bare die

MOS RM3

LOT CODE NE NEC

74xx76

MOS RM3

XH035 library

T105 25E3