Y11 TRANSISTOR Search Results

Y11 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

Y11 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
m8050 Abstract: y11 transistor M8050-TRANSISTOR transistor y11 sot-23 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8050 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 M8050 100mA 800mA 800mA, 30MHz m8050 y11 transistor M8050-TRANSISTOR transistor y11 sot-23
y11 transistor Abstract: transistor y11 sot-23 .y11 transistor Text: M8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	M8050 OT-23 OT-23 100mA 800mA 800mA, 30MHz y11 transistor transistor y11 sot-23 .y11 transistor
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8050 SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 M8050 OT-23
M8050 Abstract: No abstract text available Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11	Original	PDF	M8050 200mW OT-23 M8050-L 800mA, 30MHz 800mA M8050
M8050 Abstract: m8050 NPN equivalent M8050 equivalent Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11	Original	PDF	M8050 200mW OT-23 M8050-L M8050ation 800mA, 30MHz 25-Nov-2010 M8050 m8050 NPN equivalent M8050 equivalent
AN478A Abstract: AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN423/D SEMICONDUCTOR APPLICATION NOTE AN423 FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Freescale Semiconductor, Inc. Prepared by: Roy C. Hejhall Applications Engineering Amplifier design theory utilizing the two port network	Original	PDF	AN423/D AN423 AN478A AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823
g21 Transistor Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor Text: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	PDF	S9018 1100MHz OT-23 MRA151 MRA153 g21 Transistor transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor
CA3102 Abstract: CA3102E CA3102M CA3102MZ FN611 Text: CA3102 Data Sheet October 12, 2005 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which	Original	PDF	CA3102 500MHz CA3102 500MHz. FN611 200MHz CA3102E CA3102M CA3102MZ
CA3102 Abstract: CA3102E CA3102M MS-012-AB Text: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which	Original	PDF	CA3102 500MHz CA3102 500MHz. 200MHz CA3102E CA3102M MS-012-AB
B12 IC marking code Abstract: BF547 MSB003 Y22 SOT23 transistor y21 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF	Original	PDF	BF547 MSB003 B12 IC marking code BF547 MSB003 Y22 SOT23 transistor y21
MBB400 Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation	Original	PDF	BF747 MSB003 MBB400 MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23
mbb400 Abstract: BF747 MSB003 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation	Original	PDF	BF747 MSB003 mbb400 BF747 MSB003
BF547 Abstract: MSB003 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF	Original	PDF	BF547 MSB003 BF547 MSB003
Y22 SOT23 Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11 Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor	Original	PDF	PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11

BF747 Abstract: MBB400 sot23-4 marking a1 Text: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.	Original	PDF	BF747 BF747 MBB400 sot23-4 marking a1
bf547 philips Abstract: BF547 B12 IC marking code marking code 604 SOT23 Text: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation	Original	PDF	BF547 bf547 philips BF547 B12 IC marking code marking code 604 SOT23
AN5337 ca3028 Abstract: ca3028a AN5337 CA3028B trw rf transistor ca3028 trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22 Text: Application of the CA3028 and Integrated-Circuit RF Amplifiers in the HF and VHF Ranges Application Note Introduction The CA3028A and CA3028B integrated circuits are singlestage differential amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The	Original	PDF	CA3028 CA3028A CA3028B 100MHz CA3028A CA3028B AN5337 ca3028 AN5337 trw rf transistor trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22
mmbfj310 Abstract: MMBFJ309 Text: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556	Original	PDF	MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 mmbfj310 MMBFJ309
CA3054 Abstract: cascode transistor array CA3054M CA3054M96 Text: CA3054 S E M I C O N D U C T O R March 1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential	Original	PDF	CA3054 120MHz CA3054 300MHz. 120MHz. cascode transistor array CA3054M CA3054M96
DTB513ZE Abstract: DTB513ZM SC-75A Text: DTB513ZE / DTB513ZM Transistors -500mA / -12V Low VCE sat Digital transistors (with built-in resistors) DTB513ZE / DTB513ZM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB513ZE (2) Supply voltage 0.2 0.1Min. (1) 0.2 0.15 0.5 0.5	Original	PDF	DTB513ZE DTB513ZM -500mA DTB513ZE DTB513ZM SC-75A
Untitled Abstract: No abstract text available Text: ON Semiconductort JFET Transistor MMBFU310LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556	Original	PDF	MMBFU310LT1 236AB)
CA3054M96 Abstract: double channel double balanced demodulators CA3054 CA3054M MS8002 Text: CA3054 S E M I C O N D U C T O R Dual Independent Differential Amp for Low Power Applications from DC to 120MHz November 1996 Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential amplifiers with associated constant current transistors on a	Original	PDF	CA3054 120MHz CA3054 300MHz. 120MHz. 1-800-4-HARRIS CA3054M96 double channel double balanced demodulators CA3054M MS8002
AN215A Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation	Original	PDF	AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
Untitled Abstract: No abstract text available Text: Philips Semiconductors b b 5 3 c]31 0031082 842 M A P X Product specification NPN 1 GHz wideband transistor £ N ACER PHILIPS/DISCRETE BF748 btt » “ PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance	OCR Scan	PDF	bb53c BF748

Y11 TRANSISTOR Search Results

Y11 TRANSISTOR Result Highlights (5)

Y11 TRANSISTOR Datasheets Context Search

m8050

y11 transistor

Untitled

M8050

M8050

AN478A

g21 Transistor

CA3102

CA3102

B12 IC marking code

MBB400

mbb400

BF547

Y22 SOT23

BF747

bf547 philips

AN5337 ca3028

mmbfj310

CA3054

DTB513ZE

Untitled

CA3054M96

AN215A

Untitled