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    PacTech PN-F6Y-11-SN-28-Q

    FLAT CAT6 28AWG FLEX UTP 11 YL
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    DigiKey PN-F6Y-11-SN-28-Q Box 980
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    PacTech PN-F6Y-11-SN-28-LP

    CABLE MOD 8P8C PLUG TO PLUG 11'
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    DigiKey PN-F6Y-11-SN-28-LP Box 9
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    Fischer Elektronik GmbH & Co KG SLY-11-SMD-051-6-S

    ONE ROW, 0.5 MM, SUITABLE FOR
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    DigiKey SLY-11-SMD-051-6-S Bulk 10
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    Fischer Elektronik GmbH & Co KG SLY-11-SMD-133-8-Z

    ONE ROW, 0.5 MM, SUITABLE FOR
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    DigiKey SLY-11-SMD-133-8-Z Bulk 10
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    Fischer Elektronik GmbH & Co KG SLY-11-SMD-051-8-Z

    ONE ROW, 0.5 MM, SUITABLE FOR
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    DigiKey SLY-11-SMD-051-8-Z Bulk 10
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    Y11S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code g1s

    Abstract: Q62702-F1129 D 998 TRANSISTOR
    Text: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO


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    PDF Q62702-F1129 OT-143 marking code g1s Q62702-F1129 D 998 TRANSISTOR

    mosfet bf 987

    Abstract: BF 987 BF987 98-7
    Text: Silicon N Channel MOSFET Triode ● For high-frequency stages up to 300 MHz, preferably in FM applications ● High overload capability BF 987 Type Marking Ordering Code BF 987 – Q62702-F35 Pin Configuration 1 2 3 D S Package1 TO-92 G Maximum Ratings Parameter


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    PDF Q62702-F35 mosfet bf 987 BF 987 BF987 98-7

    Q62702-F1372

    Abstract: No abstract text available
    Text: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


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    PDF Q62702-F1372 OT-23 Q62702-F1372

    BF998

    Abstract: marking code GL Q62702-F1129 d 998 transistor circuit
    Text: Silicon N Channel MOSFET Tetrode ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz BF 998 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO Q62702-F1129


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    PDF Q62702-F1129 OT-143 BF998 marking code GL Q62702-F1129 d 998 transistor circuit

    0949

    Abstract: F 739 DC Q62702-F1215
    Text: CF 739 GaAs FET ● ● ● ● ● CF 739 N-channel dual-gate GaAs MES FET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners Low noise High gain Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF Q62702-F1215 OT-143 0949 F 739 DC Q62702-F1215

    BF Marking

    Abstract: mosfet marking code gg Q62702-F1020 994s
    Text: Silicon N Channel MOSFET Tetrode ● BF 994 S For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 994 S MG Q62702-F1020


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    PDF Q62702-F1020 OT-143 BF Marking mosfet marking code gg Q62702-F1020 994s

    J32CG

    Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
    Text: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0


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    PDF 750GX TSI108 RS232 NC7SZ00 J32CG 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


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    PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    transistor smd cf

    Abstract: CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318
    Text: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,


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    PDF Q62702-F1215 OT-143 P-SOT143-4-1 EHT07329 GPS05559 transistor smd cf CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318

    Q62702-F1055

    Abstract: Silicon N Channel MOSFET Tetrode
    Text: Silicon N Channel MOSFET Tetrode ● Integrated suppression network against spurious VHF oscillations ● For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners BF 997 Type Marking Ordering Code tape and reel Pin Configuration


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    PDF Q62702-F1055 OT-143 Q62702-F1055 Silicon N Channel MOSFET Tetrode

    bf998

    Abstract: bf998 mosfet tetrode application note VPS05178
    Text: BF998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF BF998 VPS05178 OT143 EHT07305 EHT07306 Aug-10-2001 bf998 bf998 mosfet tetrode application note VPS05178

    k d 998 0

    Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
    Text: BF 998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF VPS05178 OT-143 Res00 EHT07305 EHT07306 Oct-26-1999 k d 998 0 transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998

    f936

    Abstract: Q62702-F936 Silicon N Channel MOSFET Tetrode
    Text: Silicon N Channel MOSFET Tetrode ● BF 995 For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 995 MB Q62702-F936 S SOT-143 D G2 G1 Maximum Ratings Parameter Symbol Values Unit


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    PDF Q62702-F936 OT-143 f936 Q62702-F936 Silicon N Channel MOSFET Tetrode

    triode sot23

    Abstract: bf999 Q62702-F1132 MARKING CODE DG SOT 23
    Text: Silicon N Channel MOSFET Triode ● BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 999 LB Q62702-F1132 G SOT-23 D S Maximum Ratings Parameter Symbol


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    PDF Q62702-F1132 OT-23 triode sot23 bf999 Q62702-F1132 MARKING CODE DG SOT 23

    BF998W

    Abstract: SOT 343 MARKING BF BF998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF BF998W VPS05605 OT-343 Cha00 EHT07305 EHT07306 May-05-1999 BF998W SOT 343 MARKING BF BF998

    F 739 DC

    Abstract: gaas fet vhf uhf F1215 Q62702-F1215 gaas fet marking a MARKING CF AC 1507 -0720 CF739ms
    Text: GaAs FET CF 739 Features N-channel dual-gate GaAs MES FET ● Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners ● Low noise ● High gain ● Low input capacitance ● ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF Q62702-F1215 OT-143 F 739 DC gaas fet vhf uhf F1215 Q62702-F1215 gaas fet marking a MARKING CF AC 1507 -0720 CF739ms

    BF996

    Abstract: BF996S Q62702-F1021 Silicon N Channel MOSFET Tetrode marking code GL
    Text: Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure BF 996 S Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 996 S MH Q62702-F1021 S SOT-143 D G2 G1 Maximum Ratings


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    PDF Q62702-F1021 OT-143 BF996 BF996S Q62702-F1021 Silicon N Channel MOSFET Tetrode marking code GL

    BF998W

    Abstract: 998 transistor bf998 102001 transistor BF 998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF BF998W VPS05605 OT343 EHT07305 EHT07306 Aug-10-2001 BF998W 998 transistor bf998 102001 transistor BF 998

    BF998R

    Abstract: 998 transistor transistor BF 998
    Text: BF998R Silicon N-Channel MOSFET Tetrode  Short-channel transistor with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration


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    PDF BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998

    FET 2SK23A

    Abstract: 2SK107 2SK23A 2SK23A-8 2SK58 2SK23A9 FET+2SK23A
    Text: SO N Y « 2SK23A Silicon N C hannel Ju n ctio n FET • Â S îD C -to -V H F Use. L o w Noise. High R e liab ility • Economical Typ e: 2 S K 1 0 7 • Dual T y p e : 2SK58 Absolute M axim um Ratings T É = 2 6 C Characteristics Sym bol 2SK23A -8 2 S K 2 3 A 9


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    PDF 2SK23A 2SK107 2SK58 2SK23A 30/iA FET 2SK23A 2SK107 2SK23A-8 2SK58 2SK23A9 FET+2SK23A

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


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    PDF

    diode U3j

    Abstract: IRf 447 MOSFET 1RF530 1rf5305 a7x transistor IRF532 MOSFET IRF 531 motorola diode u3j aaBO ON U3J
    Text: MOTOROLA SC MOTOROLA XST RS/R F IM E D I b3b?aSM O OÔ ÎbôS 4 IRF530 1RF531 IRF532 IRF533 •I SEM ICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM OS POWER FIELD EFFECT TRANSISTOR These T M O S Pow er FETs are d esign ed for low voltage, high


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    PDF IRF530 IRF531 IRF532 IRF533 O-220) diode U3j IRf 447 MOSFET 1RF530 1rf5305 a7x transistor MOSFET IRF 531 motorola diode u3j aaBO ON U3J

    2SK43

    Abstract: 2SK43-3 100KF 2SK43A 100-KF 81121 2SK433 81-121 MU 108 2sk43 sony
    Text: S O N Y - K43,43 s In d u stria l U se an N C hannel Ju n ctio n F E T ¡•Super Low Noise, High G m , High R eliab ility «<*5 VTR. 2 S K 4 3 S - D . RonS 80ii '• ;- i > * « 0 o s s -5 p A ty p .l •T V C a m e r a , V i d e o a n d A u d i o P r e a m p l i f i e r *


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    PDF 2SK43 RON-80-. 2SK43Â 2SK43/2SK43< lo-10iiA. S-10V. 30iiA) 2SK43- 2SK43CD- 2SK43-3 100KF 2SK43A 100-KF 81121 2SK433 81-121 MU 108 2sk43 sony