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    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR H Y514170 S e r ie s 256K X 16-bit CMOS ORAM with 2 WE PRELIMINARY DESCRIPTION The Y514170 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF Y514170 16-bit HY514170 400mil 40pin 40/44pin 1AC09-00-APR93 4b75Dflfl

    CX-381

    Abstract: No abstract text available
    Text: -HYUNDAI Y514170B Series 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The Y514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514170B 256KX 16-bit 400mil 40pin 40/44pin 825mW CX-381

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y 5 1 4 1 7 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The Y514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF 256KX 16-bit HY514170B 400mil 40pin 40/44pin 1AC21-00-MAY94 PQS702