injection moulding machine plc controlled system
Abstract: relay safety telemecanique telemecanique safety relays telemecanique emergency stop relay relays telemecanique xps-mp XPSMP telemecanique hand switch telemecanique telemecanique emergency stop button
Text: Telemecanique XPS-MP 43 53 13 2374 Y84 Y94 2 I Y + 2 Y C C1 I 1 C3 I 3 A1 2 4 A 4 I I6 C6 I 5 C5 64 63 54 34 44 33 24 14 Module de sécurité pour deux fonctions de sécurité indépendantes Safety Controller for two independent safety functions Safety-Controller für zwei
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Original
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1800VA/180VA)
EN954-1
injection moulding machine plc controlled system
relay safety telemecanique
telemecanique safety relays
telemecanique emergency stop relay
relays telemecanique
xps-mp
XPSMP
telemecanique hand switch
telemecanique
telemecanique emergency stop button
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Untitled
Abstract: No abstract text available
Text: ESAD25M C,N,D <i5A> ¡ a a g g it » f'f = t - K FAST RECOVERY DIODE • Features >W y # I t A' MUR £ t l f t 7 J l ^ - Y94 Insulated package by fully molding. High voltage by mesa design. ►S S i f S t t High reliability ìé m m C onnection D iagram
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ESAD25M
ESAD25M-DDC
ESAD25M-DDN
ESAD25M-DDD
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Untitled
Abstract: No abstract text available
Text: T H I S DRAWING C R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. AMP 1 4 7 1 - 9 REV 09MA Y94 i 1 1 -MA Y-0 1 10:53:00 amp36051 /home/amp36051/edmmod AL L R IG H T S R E S E R V E D . ,19 n 2 LOC AA
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amp36051
/home/amp36051/edmmod
NLE55
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PDF
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Untitled
Abstract: No abstract text available
Text: r 4 T H I S DRAWING T 3 R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. AL L R IG H T S R E S E R V E D . QUANTITY AMP 1 4 7 1 - 9 REV 09MA Y94 i 1 1 -MA Y-0 1 10:38:29 amp36051 /home/amp36051/edmmod
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amp36051
/home/amp36051/edmmod
NLE55
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PDF
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MMIC marking code S2
Abstract: SIEMENS MMIC powaramp ta CGY94 Q68000-A9124 CGY so SMD F09
Text: SIEMENS GaAs MMIC CGY94 Preliminary Datasheet * Power amplifier for G SM or A M PS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V ' 2 W output power at 3.6 V * Overall power added efficiency 46 % * Input matched to 50 £î, simple output match
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CGY94
Q68000-A9124
577ms
235bD5
MMIC marking code S2
SIEMENS MMIC
powaramp ta
CGY so
SMD F09
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Untitled
Abstract: No abstract text available
Text: ><M y i l u n fi i H Y 5 1 V 4 4 1 O B S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit PREUMINARY DESCRIPTION The HY51V4410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY51V4410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced
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HY51V4410B
1AC14-00-MA
HY51V4410BJ
HY51V4410BU
HY51V4410BSU
HY51V441OBT
HY51V4410BLT
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Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V17400A
HY51V17400A
1AD35-00-MA
4b750flÃ
HY51V17400AJ
HY51V17400ASU
HY51V17400AT
HY51V17400ASLT
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HY531000S
Abstract: No abstract text available
Text: H Y 5 3 1 0 0 0 S e r ie s IM X 1-bit CMOS DRAM "H Y U N D A I DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY531000
300mil
1AB04-30-MAY94
4b750flÃ
HY531000S
HY531000J
1AB04-30-MAÅ
HY531000S
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Untitled
Abstract: No abstract text available
Text: 7 TH 5 DRAWING CO PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 6 4 5 2 3 ,1 9 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION AA •POSI TI ON #1 REVISED P ER EC 0S1B-0020-01 DD 0 9 J UL 0
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0S1B-0020-01
18-JUL-97
/home/ssrvl72a/dsk01/dept3621/ampi
2439/drawinas/mictor
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 4 3 7 0 B S e r ie s 256K* 16-bit CMOS DRAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY51V4370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve
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OCR Scan
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16-bit
HY51V4370B
400mil
40pin
40/44pin
1AC24-00-MA
DDD27M
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 TH 5 DRAWING C O PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 6 4 5 3 2 ,19 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION Y •POSI TI ON #1 REVISED P ER EC 0G22-0025-99 SS 4- 26-99 INDICATOR
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0G22-0025-99
C17510.
18-JUL-97
/home/ssrvl72a/dsk01/dept3621/ampi
2439/drawinas/mictor
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PDF
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HY514260B
Abstract: No abstract text available
Text: »HYUNDAI HY514260B Series 256K X 1 6 - b lt CMOS DRAM w ith 2CAS PRELIMINARY DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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OCR Scan
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HY514260B
16-bit
400mil
40pin
40/44pin
1AC25-00-MA
HY514170BJC
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PDF
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Untitled
Abstract: No abstract text available
Text: HY524800 Series •HYUNDAI S12KX 8-bit CMOS DRAM DESCRIPTION The HY524800 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY524800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY524800
S12KX
28pin
1AC03-20-MAY94
50Afl
HY524800J
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I H Y 5 1 V 4 4 0 0 B S e r ie s 1 M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V4400B
HY51V4400B
1AC12-00-MAY94
HY51V4400BJ
HY51V4400BU
HY51V4400BSU
HY51V4400BT
HY51V4400BLT
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Untitled
Abstract: No abstract text available
Text: 7 TH 5 DRAWING CO PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 5 6 4 3 2 ,1 9 DI ST LOC R ES ER V ED . REVISIONS 47 AD DESCRIPTION REVISED POS I T I ON #1 P ER EC 0S1B-0020-01 DD 09JUL0 I NO I C A T OR
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0S1B-0020-01
09JUL0
0RY57AL
C51100.
BU55E5:
60Y40
ffiFV2432i/dsk01/
2439/draw
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 4 4 6 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS & WPB PRELIMINARY DESCRIPTION The HY514460B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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OCR Scan
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256KX
16-bit
HY514460B
400mil
40pin
40/44pin
1AC27-00-MAY94
4b750Ã
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PDF
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9552N
Abstract: 8802n 5504L 2N3632 2N44 THB94 XO-72 SD1577 SD1574 CB299
Text: 130. 230 MHz C L A S S C FOR FM MOBILIE A P P L IC A T IO N S Vcc PACKAGE TYPf C O N F IG . V ^out min (W ) fo Pin (M H z) (W) Gp min (dB) 150 175 175 175 150 0,1 0,1 0,25 0,79 0,22 7 8 8 5 11 _ — — — — 175 175 175 175 175 175 175 175 175 175
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XO-72
O-117SL
T0-220
2N3632
THB94
CB-301J
O-117SL
CB-299)
ICB-304)
9552N
8802n
5504L
2N44
THB94
SD1577
SD1574
CB299
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PDF
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Untitled
Abstract: No abstract text available
Text: 6 7 TH 5 DRAWING CO PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 5 4 2 3 ,1 9 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION P P O S I T I ON #1 REVISED P ER EC 0S1B-0020-01 DD 09JUL0 I ND I C A T O R
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0S1B-0020-01
09JUL0
CRY57AN
C51100.
BU55E5:
C0N7AC73
30-SEP-97
ffiFV2432i/dsk01/dept3621/amp12439/draw
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PDF
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Untitled
Abstract: No abstract text available
Text: T H I S DRAWING I S C OPYRIGHT U N PU B L IS H E D . R E L E A S E D FOR P U B L I C A T I O N 19 BY AMP INCORPORATED. 19 LOC A LL R I G H T S RE S ER VE D. G D I ST REVISIONS 14 LTR REVISED D 33 ± 0 . 1 3 D I A [. 3 2 8 ± •0 0 5 ] FOR 5/16 57UD D DESCRIPTION
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05DEC97
05-DEC-97
amp26463
/ws/deptl123/dwql123/u
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PDF
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D-0 94V-0
Abstract: No abstract text available
Text: 7 THIS JÊL DRAWING 15 U N P U B L IS H E D . C O P Y R IG H T RELEASED 19 BY AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S , 6 4 5 3 2 19 LOO R ES ER V ED . GP R E V I S I ON S DI ST 00 DESCRIPTION D REVISED PER EC 0S1C-0318-00 CF 2SSEP01 2 £ OF
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OCR Scan
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0S1C-0318-00
2SSEP01
pi2184
D-0 94V-0
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PDF
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Untitled
Abstract: No abstract text available
Text: TH 5 DRAWING C O PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 5 6 7 4 3 2 ,19 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION L -POS I T I ON #1 REVISED P ER EC 0S1B-Q043-00 SS 2-23-00 I NO I C A T O R
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OCR Scan
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0S1B-Q043-00
C17510.
C51100.
30-SEP-97
ffiFV2432i/dsk01/dept3621/amp12439/draw
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PDF
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Untitled
Abstract: No abstract text available
Text: 6 7 TH 5 DRAWING C O PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 5 4 3 2 ,19 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION N P O S I T I ON #1 REVISED P ER EC 0S1B-Q042-01 DD 27MAR0 I ND I C A T O R
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0S1B-Q042-01
27MAR0
CRY57AN
C17510.
C51100.
30-SEP-97
ffiFV2432i/dsk01/dept3621/amp12439/draw
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 T H I S DRAWING 7 3 R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . COPYRIGHT 19 BY AMP INCORPORATED. 2 ,19 LOC A LL R IG H T S R ES E R V E D . AA D IST REVISIONS 22 DESCRIPTION LTR REV: B .5 3 7 El 3 . 6 4 0 ] D EC 0 G 7 A - 0 2 1 0 - 9 8
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08FEB99
27jjm]
amp36051
p36051/edm
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PDF
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GER-A
Abstract: No abstract text available
Text: 6 7 TH 5 DRAWING C O PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 5 4 2 3 ,19 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION M P O S I T I ON #1 REVISED PER EC 9-11- 00 0S1B-Q198-00 DD I ND I C A T O R
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OCR Scan
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0S1B-Q198-00
CRY57AN
C17510.
C51100.
30-SEP-97
ffiFV2432i/dsk01/dept3621/amp12439/draw
GER-A
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PDF
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