j139
Abstract: 0395 ADC BD179 BD180 3268 127 D TRANSISTOR H127
Text: motorola x s t r s /r sc 12E D § b3b7SS4 QQÖ4713 2 | f MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD179
BD180
Q0fi4713
O-22SAA
j139
0395 ADC
BD180
3268
127 D TRANSISTOR
H127
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MJ10011
Abstract: S-80W
Text: M O T O R O L A SC XSTRS/R F 12 E D § b 3 b ? e S M O G Ó S O B T Û | MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARLINGTON HORIZONTAL DEFLECTION TRANSISTOR 8.0 A M P E R E NPN SILICON D ARLINGTON POWER TRANSISTOR . . . specifically designed for use in deflection circuits.
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IR 92 0151
Abstract: MJ12002 MJ-12002 TC204A 4229PL00-3C8
Text: MOTORCLA SC XSTRS/R F 12E D | fc.3t.72SM GGflSQflfi T f T-J3-/J MOTOROLA SEMICONDUCTOR MJ12002 TECHNICAL DATA D e s ig n e rs D a ta S h e e t 2.5 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR 1500 VOLTS 76 WATTS . . . specifically designed for use in large screen color deflection
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MJ12002
14-MAXIMUM
IR 92 0151
MJ12002
MJ-12002
TC204A
4229PL00-3C8
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IRF 450 MOSFET
Abstract: IRF820 IRF821 IRF823 IRF820..821 72SM MTP3N45 IRF820.821 transistor IRF 450 4570 821
Text: MOTOROLA SC X S T R S /R F 11E D I h3b7ESM 0GÔTP05 {, | MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode S ilicon G ate TM O S These T M O S Power FETs are designed for high
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IRF820
IRF821
IRF823
221a-04
tq-220ab
IRF821.
IRF 450 MOSFET
IRF823
IRF820..821
72SM
MTP3N45
IRF820.821
transistor IRF 450
4570 821
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TA 7092 AP
Abstract: BF 178 TO-39 CASE connection MPQ7092 pj 939 sot 23 PW1 46
Text: MOTOROLA SC XSTRS/R F 1 Z E I b 3 b 7 2 5 4 0 G ñ b Q 4 7 1 M A X I M U M R A T IN G S Sym bol R a tin g M PQ7091 M PQ 7092 M PÛ 7093 MPQ7091 thru MPQ7093 U n it C o lie cto r-E m itte r V o lt a g e VcEO 150 200 250 Vdc C o lle cto r-B a se V o lt a g e
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PQ7091
Y14SM,
Y145M,
TA 7092 AP
BF 178 TO-39 CASE connection
MPQ7092
pj 939
sot 23 PW1 46
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mj6503 motorola
Abstract: MJ6503 mj6503 transistor MJ6502 MARK B3L MJ-6503
Text: MOTOROLA SC X S TR S /R F 1 SE D I b 3b ? 2 S4 QQÖMTÖS 2 | MOTOROLA SEMICONDUCTOR MJ6503 TECHNICAL DATA D e siS’ruM's D ata Sheet 8 AM PERE PNP SIUCON POWER TRANSISTOR SWITCHMODE SERIES PNP SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The MJ6503 transistor is designed for high-voltage, high-speed,
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MJ6503
MJ6503
mj6503 motorola
mj6503 transistor
MJ6502
MARK B3L
MJ-6503
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transistor 12E
Abstract: sot 23 PW1 46 OJ31 MPQ6600 7905 to-92 2T118 sot23 PW1 il038 40mR MPQ*6600
Text: MOTOROLA SC XSTRS/R 12E F 0 I b3fc,72S4 M A X I M U M R A T IN G S Sym bol MPÛ6100 MPQ6600 MPQ6100A MPQ6600A Unit Collector-Emitter Voltage VCEO 40 45 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Veb o 6.0 Vdc ic 50 m Adc Rating Collector Current — Continuous
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MPQ6600
MPQ6100A
MPQ6600A
MPQ6100,
PV3-25
MPQ6600,
O-116
DIMENS10N-NG
Y145M,
transistor 12E
sot 23 PW1 46
OJ31
7905 to-92
2T118
sot23 PW1
il038
40mR
MPQ*6600
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MOC70
Abstract: k 1094 transistor MOC70H1 motorola transistor 307 transistor 701 2k transistor 1094
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MOC70 Series S lo tte d O p tic a l S w it c h e s T ransisto r Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili con N PN phototransistor in a m olded plastic housing. A slot in the housing between the
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354G-01
MOC70
k 1094 transistor
MOC70H1
motorola transistor 307
transistor 701 2k
transistor 1094
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2N3422
Abstract: 2N3442 2n4347 2N4327 C0440
Text: MOTOROLA SC XSTRS/R F 1EE D | b3b72SM G0â44b0 MOTOROLA r - 3 3 -/ 3 T | 2N3442 2N4347 SEMICONDUCTOR TECHNICAL DATA 5.0 AND 10 AMPERE POWER TRANSISTORS NPN SILICON HIGH-POWER INDUSTRIAL TRANSISTORS 1 2 0 ,1 4 0 V O L T S 1 0 0 ,1 1 7 W A T T S NPN silicon power transistors designed for applications in
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b3b72SM
2N3442
2N4347
2N4347
2N3442
2N3422
2N4327
C0440
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